Chapter 2 MOS Transistors. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

VLSI Design Lecture 3a: Nonideal Transistors. Outline Transistor I-V Review Nonideal Transistor Behavior Velocity Saturation Channel Length Modulation.

Lecture 3: CMOS Transistor Theory. CMOS VLSI DesignCMOS VLSI Design 4th Ed. 3: CMOS Transistor Theory2 Outline  Introduction  MOS Capacitor  nMOS I-V.

Chapter 6 The Field Effect Transistor

EE466: VLSI Design Lecture 02 Non Ideal Effects in MOSFETs.

Design and Implementation of VLSI Systems (EN1600) Lecture08 Prof. Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison.

Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 12 Lecture 12: MOS Transistor Models Prof. Niknejad.

Introduction to CMOS VLSI Design MOS Behavior in DSM.

Design and Implementation of VLSI Systems (EN0160) Prof. Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Weste/Addison Wesley.

Lecture 11: MOS Transistor

Introduction to VLSI Circuits and Systems, NCUT 2007 Chapter 6 Electrical Characteristic of MOSFETs Introduction to VLSI Circuits and Systems 積體電路概論賴秉樑.

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

Lecture #16 OUTLINE Diode analysis and applications continued

Outline Introduction – “Is there a limit?”

The metal-oxide field-effect transistor (MOSFET)

CSCE 612: VLSI System Design Instructor: Jason D. Bakos.

Digital Integrated Circuits A Design Perspective

Reading: Finish Chapter 6

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Introduction to CMOS VLSI Design Nonideal Transistors.

Spring 2007EE130 Lecture 36, Slide 1 Lecture #36 ANNOUNCEMENTS Updated information for Term Project was posted on 4/14 Reminder: Coffee Hour today at ~4PM!

Spring 2007EE130 Lecture 38, Slide 1 Lecture #38 OUTLINE The MOSFET: Bulk-charge theory Body effect parameter Channel length modulation parameter PMOSFET.

EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.

Semiconductor Devices III Physics 355. Transistors in CPUs Moore’s Law (1965): the number of components in an integrated circuit will double every year;

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

EE130/230A Discussion 11 Peng Zheng.

MOS Capacitors MOS capacitors are the basic building blocks of CMOS transistors MOS capacitors distill the basic physics of MOS transistors MOS capacitors.

EE213 VLSI Design S Daniels Channel Current = Rate of Flow of Charge I ds = Q/τ sd Derive transit time τ sd τ sd = channel length (L) / carrier velocity.

NOTICES Project proposal due now Format is on schedule page

The Devices Digital Integrated Circuit Design Andrea Bonfanti DEIB

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.

Norhayati Soin 06 KEEE 4426 WEEK 7/1 6/02/2006 CHAPTER 2 WEEK 7 CHAPTER 2 MOSFETS I-V CHARACTERISTICS CHAPTER 2.

Modern VLSI Design 4e: Chapter 2 Copyright  2009 Prentice Hall PTR Topics n Derivation of transistor characteristics.

Introduction to FinFet

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

Chapter 4 Field-Effect Transistors

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

CMOS Analog Design Using All-Region MOSFET Modeling 1 Chapter 2 Advanced MOS transistor modeling.

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

Junction Capacitances The n + regions forms a number of planar pn-junctions with the surrounding p-type substrate numbered 1-5 on the diagram. Planar junctions.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY

Structure and Operation of MOS Transistor

1ECE 584, Summer 2002Brad Noble Chapter 3 Slides Cross Sectional View of FET.

Short-channel Effects in MOS transistors

MOS Transistor Other handouts Project Description Other “assignments”

Chapter 6 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. High-Speed CMOS Logic Design.

MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

Introduction to semiconductor technology. Outline –6 Junctions Metal-semiconductor junctions –6 Field effect transistors JFET and MOS transistors Ideal.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 1 Introduction to Electronic Circuit Design.

Field Effect Transistor (FET)

Chap.1 Physics and Modelling of MOSFETs 반도체 연구실 신입생 세미나 박 장 표 2009 년 1 월 8 일.

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

Analog Integrated Circuits Lecture 1: Introduction and MOS Physics ELC 601 – Fall 2013 Dr. Ahmed Nader Dr. Mohamed M. Aboudina

Microelectronic Circuit Design McGraw-Hill Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock.

Chapter 3 Fabrication, Layout, and Simulation.

Chapter 2 MOS Transistors.

Reading: Finish Chapter 17,

EXAMPLE 7.1 BJECTIVE Determine the total bias current on an IC due to subthreshold current. Assume there are 107 n-channel transistors on a single chip,

Lecture 20 OUTLINE The MOSFET (cont’d)

Lecture 20 OUTLINE The MOSFET (cont’d)

Presentation transcript:

Chapter 2 MOS Transistors

2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR

2.2 Structure and Operation of the MOS Transistor

2.3 THRESHOLD VOLTAGE OF THE MOS TRANSISTOR

2.3 Threshold Voltage of the MOS Transistor

Intrinsic carrier concentration : Mass action law : Difference between intrinsic and actual Fermi level : p-type material case : Gate oxide capacitance : 2.3 Threshold Voltage of the MOS Transistor (2.1) (2.2) (2.3a) (2.3b) (2.4) (2.5)

2.3 Threshold Voltage of the MOS Transistor

2.3 MOS Structure The Depletion Approximation

2.3 MOS Structure The Depletion Approximation

MOS Structure The Depletion Approximation

Change of Quasi-Fermi Potentials across the Space- Charge Region 17

18

Modern VLSI Devices 19

Modern VLSI Devices 20

21

22

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

24

25

26

27

28

29

Silicon-gate device work function difference : Flat-band condition : Depletion layer(p-type) thickness : Bulk charge : (Inversion) (Body bias) 2.3 Threshold Voltage of the MOS Transistor (2.6) (2.7) (2.8) (2.9a) (2.9b)

Threshold voltage : Body-effect coefficient(body factor)Flat-band condition : 2.3 Threshold Voltage of the MOS Transistor (2.10) (2.11) (2.12)

2.4 Effect of Gate-Body Voltage on Surface Condition

2.3 Threshold Voltage of the MOS Transistor

2.4 FIRST-ORDER CURRENT-VOLTAGE CHARACTERISTICS

2.4 First-Order Current-Voltage Characteristics

Charge area density at the point y : Drain-source current : (Carrier velocity : ) 2.4 First-Order Current-Voltage Characteristics (2.13) (2.14) (2.15)

Process transconductance parameter : Drain-source current : (Device transconductance parameter : ) 2.4 First-Order Current-Voltage Characteristics (2.16) (2.17a) (2.17b)

2.4 First-Order Current-Voltage Characteristics

Saturation voltage : Drain-source current (saturation) : (Shortening the electrically effective value of L) 2.4 First-Order Current-Voltage Characteristics (2.18) (2.19) (2.20)

2.4 First-Order Current-Voltage Characteristics

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

2.5 DERIVATION OF VELOCITY- SATURATED CURRENT EQUATION

2.5.1 Effect of High Fields

(2.21)

2.5.1 Effect of High Fields

Critical field values : Carrier velocity : Consider boundary condition : (2.22) (2.23a) (2.23b) (2.24) Effect of High Fields

Linear region operation Current Equations for Velocity-Saturated Devices (2.25)

Saturation region operation Limiting cases : ( ) (2.26) (2.27) (2.28) (2.29) Current Equations for Velocity-Saturated Devices

5.2 Carrier Velocity Saturation

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

1X devices Current Equations for Velocity-Saturated Devices

Equations for deep submicron devices Saturation region Channel length modulation Linear region Current Equations for Velocity-Saturated Devices

2.6 ALPHA-POWER LAW MODEL

2.6 Alpha-Power Law Model

(2.30a) (2.30b) (2.31) 2.6 Alpha-Power Law Model

2.7 SUBTHRESHOLD CONDUCTION

2.7 Subthreshold Conduction

2.5.1 Effect of High Fields

Current equation: Slope factor : 2.7 Subthreshold Conduction (2.32) (2.33)

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

2.8 CAPACITANCES OF THE MOS TRANSISTOR

2.8 Capacitances of the MOS Transistor

2.8.1 Thin-Oxide Capacitance Total capacitance of the thin-oxide : Examples : i) technology, oxide thickness ii) process, with (2.34)

2.8.1 Thin-Oxide Capacitance

7.3 A MEDIUM- FREQUENCY SMALL- SIGNAL MODEL FOR THE INTRINSIC PART

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

8.2 A Complete Quasi-Static Model for the Intrinsic Part Complete Description of Intrinsic Capacitance Effects

8.2 A Complete Quasi-Static Model for the Intrinsic Part Complete Description of Intrinsic Capacitance Effects

8.2 A Complete Quasi-Static Model for the Intrinsic Part Small-Signal Equivalent Circuit Topologies

a b c

8.2 A Complete Quasi-Static Model for the Intrinsic Part Small-Signal Equivalent Circuit Topologies

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.6

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part Nonsaturation with V DS = 0 (  =1) Saturation (  =0) ,

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

Click Intrinsic+Extrinsic (7.4)

2.8.1 Thin-Oxide Capacitance

Current-voltage characteristic : Built-in junction potential : pn Junction Capacitance (2.35) (2.36) (2.37)

2.8.2 pn Junction Capacitance

Junction capacitance : Zero-bias junction capacitance : For of the NMOS device : pn Junction Capacitance (2.38) (2.39) (2.40)

2.8.2 pn Junction Capacitance

Total junction capacitance : Simplification : (, ) pn Junction Capacitance (2.41) (2.42)

Equivalent voltage-independent capacitance pn Junction Capacitance

(2.43) (2.44) (2.45)

2.8.3 Overlap Capacitance

(2.46) (2.47) Overlap Capacitance

2.9 SUMMARY

2.9 Summary