Lecture 7.2 ChemFET Sensors. Bipolar Transistor Combination of two back-to-back p-n junctions P-N-P or N-P-N.

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Presentation transcript:

Lecture 7.2 ChemFET Sensors

Bipolar Transistor Combination of two back-to-back p-n junctions P-N-P or N-P-N

Bipolar Transistor

Field Effect Transistor (FET)

Electron Tunneling Electron Transmission, T, through thickness, δ. U=Potential Energy of Barrier E=Total Energy of Electron

Voltage Controlled Resistor

Inversion Zone - Poisson’s Eq.  2 U = -  /(   o ) –Metal on N Zone P Zone –  n = - e N d -  p =+ e N a –Boundary Conditions U=U o at x=0 U=0 V at x= 

Inversion Layer

Different Metals have different Fermi Energies Fermi Energy is related to the Work Function for the Metal Work Function is changed by gas adsorption or intercalation

Gate Material Metal –Pd H 2  2 H (intercalated in Pd) Alters Pd work function and E f –Hydrogen Sensor Semi-Conducting Oxide –SnO 2_ Reducing Gas Alters Oxygen Vacancy Alters E f and Conductivity –Alcohol Sensor –Formaldehyde Sensor –CO sensor

Non-Stoichiometric Dielectrics Metal Excess Metal with Multiple valence Metal Deficiency

Density Change with Po 2 SrTi 1-x O 3

Non-Stoichiometric Dielectrics K i =[h+][e-] K” F =[O” i ][V” O ] Conductivity  =f(Po 2 ) Density =f(Po 2 )

Non-Stoichiometric Dielectrics Excess M 1+x O Deficient M 1-x O

Dielectric Conduction due to Non-stoichiometry N-type P-type

Dielectric Conduction due to Non-stoichiometry N-type P-type Excess Zn 1+x O Deficient Cu 2-x O + h

Extrinsic Conductivity Donor Doping Acceptor Doping n-type p-type E d = -m* e e 4 /(8 (  o ) 2 h 2 ) E f =E g -E d /2 E f =E g +E a /2

Inversion Layer