WODEAN, June-07 Some DLTS results…. J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics, P.O. 1048 Blindern, N-0316 Oslo,

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WODEAN, June-07 Some DLTS results…. J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics, P.O Blindern, N-0316 Oslo, NORWAY and University of Oslo, Centre for Materials Science and Nanotechnology P.O Blindern, N-0318 Oslo, NORWAY Department of Physics

WODEAN, June-07 Topics - Neutron-irradiated samples; first results -Low temperature defect annealing

WODEAN, June-07 Samples – neutron irradiation P + - n - - n + Si diodes, processed by CIS std, ( ) MCz, 1 kΩcm, 300 µm 1 MeV neutrons at RT, 3.5x10 11 and 6.7x10 11 cm -2 (”DLTS”) Storage at -20 °C

Results – neutron irradiation E c eV 0.23 eV 0.43 eV E4

Results – neutron irradiation E4 E c eV 0.23 eV 0.43 eV

Results – neutron irradiation Local Fermi level pinning??!

Monakhov et al., Phys. Rev. B65, (2002) Defect tracks in Si 3 MeV Au single ion impact Vacancy distribution Vines et al., Phys. Rev. B73, (2006)

WODEAN, June-07 Samples – LT defect annealing P + - n - - n + Si diodes, standard process by SINTEF MCz, SFz – as processed MCz, SFz – pre-annealed at 450 º C for 1h MCz, SFz – hydrogenated in HF º C, 1h 6 MeV electrons at RT, 2-5x10 12 cm -2 Storage at -20 °C

P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 Bleka et al., ECS Trans 3, 387 (2006)

P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 VO, V 2 =/-, V 2 -/0 and E4 vs time at RT

P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 Loss of VO, V 2 =/- and V 2 -/0 vs loss of E4

P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 Difference between DLTS spectra E5 E4 E c eV  app ~ cm 2 E5 E c eV  app ~3x cm 2

Further results (I) E4/E5 occur with the same relative initial concentration (~25% of [V 2 ]) and exhibit the same annealing rate at RT irrespective of MCz (as-processed, pre-annealed, pre-annealed+hydrogenated), SFz ( as-processed, pre-annealed, pre-annealed+hydrogenated ) and DOFZ (as-processed, pre-annealed, pre-annealed+hydrogenated)

Further results (II) Isothermal annealing of E4/E5 at 22 °C (RT), 40.5 °C, 55 °C and 65 °C yield; - First order kinetics (exponential decay) - Activation energy of ~1.27 eV Prefactor of ~2.1x10 15 s -1 Cf values for reverse annealing by Moll et al.; Activation energy: ~1.33 eV Prefactor: ~1.5x10 15 s -1 !!!!!

P + -n - -n + SFz diode N d ~4x10 12 cm -3 6 MeV e -, 2x10 12 cm -2 Filling pulse measurements for the VO peak C s C i (and C i ) is not involved in the annealing of E4/E5

Speculations V + Y  E4 V + O i → VO [Y] ~ [E4][O i ]/[VO] ≈ 2x10 16 cm -3 Y=C s ?? Not consistent with the results for oxygen-lean SFz

Speculations V + Y  E4 V + O i → VO [Y] ~ [E4][O i ]/[VO] ≈ 2x10 16 cm -3 Y=C s ?? Not consistent with the results for oxygen-lean SFz E4 → VO + Y Y = Si i ?? Further work remains

Financial support from -the Norwegian Research Council (NFR – Strategic programs on micro/nanotechnology and materials science (NANO/FUNMAT)) -the Nordic Research Training Academy (NorFA) - University of Oslo (Functional materials program) is gratefully acknowledged. Acknowledgements