MacDiarmid Institute for Advanced Materials and NanotechnologyVictoria University of Wellington Andrew Preston Wellington, New.

Slides:

Advertisements

Similar presentations

Me-C:H by CAAD Me-C:H layer Transition layer Metal nitride/carbide Substrate PVD/CAAD single synthesis Adhesion high ionization Low cost investment Industrialized.

Advertisements

Chapter 7 Dopant Diffusion

Methane Emission to the Atmosphere Bazhin N.M. Institute of Chemical Kinetics and Combustion Novosibirsk RUSSIA.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Basic semiconductor physics.

Wally Dream Job.

Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,

UHV and Surface Science Perspectives on the Purification of Liquid Argon for Large TPC Detectors A. L. Johnson Department of Chemistry University of Nevada,

Cu(I) based delafossites as candidate materials for p-type transparent conducting oxides 05/28/10 Roy Rotstein.

Laser etching of GaN Jonathan Winterstein Dr. Tim Sands, Advisor.

Lecture #3 OUTLINE Band gap energy Density of states Doping Read: Chapter 2 (Section 2.3)

School of Physics and Astronomy, University of Nottingham, UK

Sputtered ZnO based DMS thin films for nanoscale spintronics devices Background & Introduction The wurtzite transparent semiconductor ZnO was predicted.

ECE/ChE 4752: Microelectronics Processing Laboratory

Semiconductor Devices 22

Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments

Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)

Memristor – The Fourth Fundamental Circuit Element

Thermoelectrics of Cu 2 Se: Organic-Inorganic Hybrid Approaches to zT Enhancement David Brown, Tristan Day and Dr. G. Jeffrey Snyder.

Thermochromic Doped Vanadium Dioxide Coatings for Smart Windows Ghouwaa Philander iThemba LABS Supervisor: Prof. M. Maaza Energy Postgraduate Conference.

Investigation of fluid- fluid phase transition of hydrogen under high pressure and high temperature 2014/11/26 Shimizu laboratory SHO Kawaguchi.

Page 1 Band Edge Electroluminescence from N + -Implanted Bulk ZnO Hung-Ta Wang 1, Fan Ren 1, Byoung S. Kang 1, Jau-Jiun Chen 1, Travis Anderson 1, Soohwan.

Zinc oxide films prepared by sol-gel spin coating 指導老師：林克默學生：吳仕賢報告日期： Y. Natsume, H. Sakata, Thin Solid Films 372 (2000) 30. Department of.

MacDiarmid Institute for Advanced Materials and NanotechnologyVictoria University of Wellington Andrew Preston Wellington, New.

Implantation of N-O in Diamond

Colossal Magnetoresistance of Me x Mn 1-x S (Me = Fe, Cr) Sulfides G. A. Petrakovskii et al., JETP Lett. 72, 70 (2000) Y. Morimoto et al., Nature 380,

AlGaN/InGaN Photocathodes D.J. Leopold and J.H. Buckley Washington University St. Louis, Missouri, U.S.A. Large Area Picosecond Photodetector Development.

Graphene group Introduction What do we manage (technology)?

Band structure information from soft x-ray spectroscopy Andrew Preston

MacDiarmid Institute for Advanced Materials and NanotechnologyVictoria University of Wellington Andrew Preston Wellington, New.

Technology Thin films ZnO:Al were prepared by RF diode sputtering from ZnO + 2wt % Al 2 O 3 target. It is a plasma assisted deposition method which involves.

Structure and Electrophysical Properties of the Transparent Conducting Zinc and Indium Oxides Films V.A. Kulbachinskii V.G. Kytin, O.V. Reukova, D.S. Glebov,

VICTORIA UNIVERSITY OF WELLINGTON Te Whare Wānanga o te Ūpoko o te Ika a Māui Siegmar Roth Super-Jubilee 26 June 2015 Alan B. Kaiser MacDiarmid Institute.

Elemental silicon is melted and grown into a single crystal ingot Single crystal ingot being grown Completed silicon ingot.

D.-A. Luh, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, S. Harvey, R. E. Kirby, T. Maruyama, and C. Y. Prescott Stanford Linear Accelerator.

The effect of the preparation method and grain morphology on the physical properties of A 2 FeMoO 6 (A=Sr,Ba) E.K. Hemery 1,2, G.V.M. Williams 1 and H.J.

Nitrogen-Doped Carbon

Self Forming Barrier Layers from CuX Thin Films Shamon Walker, Erick Nefcy, Samir Mehio Dr. Milo Koretsky, Eric Gunderson, Kurt Langworthy Sponsors: Intel,

About OMICS Group OMICS Group International is an amalgamation of Open Access publications and worldwide international science conferences and events.

Energy Postgraduate Conference 2013

High Temperature Oxidation of TiAlN Thin Films for Memory Devices

The electronic structure of GdN from x-ray spectroscopy Andrew Preston Department of Physics Boston University.

Conductive epitaxial ZnO layers by ALD Conductive epitaxial ZnO layers by ALD Zs. Baji, Z. Lábadi, Zs. E. Horváth, I. Bársony Research Centre for Natural.

Hall effect and conductivity in the single crystals of La-Sr and La-Ba manganites N.G.Bebenin 1), R.I.Zainullina 1), N.S.Chusheva 1), V.V.Ustinov 1), Ya.M.Mukovskii.

Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.

MEMRISTOR The Fourth Fundamental Circuit Element.

G. Kartopu*, A.K. Gürlek, A.J. Clayton, S.J.C. Irvine Centre for Solar Energy Research, OpTIC Glyndŵr, St. Asaph, UK B.L. Williams, V. Zardetto, W.M.M.

Generalizing the correlation between electrical and structural properties in sputtered ZnO:Al Andrea Crovetto *, Tobias Ottsen, Eugen Stamate, Daniel Kjær,

Luminescent Properties of ZnO and ZnO:Ce Thin-Films Manuel García-Méndez

Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon Jayantha Senawiratne 1,a, Jeffery S. Cites 1, James G. Couillard.

1 BROOKHAVEN SCIENCE ASSOCIATES Better Multi-Alkali Materials Klaus Attenkofer, John Smedley, Miguel Ruiz-Osés, Susanne Schubert, Ray Conley, Henry Frisch,

Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis 指導教授：林克默博士報告學生：郭俊廷報告日期： 99/11/29 Journal of Crystal.

MIT Amorphous Materials 10: Electrical and Transport Properties Juejun (JJ) Hu 1.

High-temperature ferromagnetism

New Cavity Techniques and Future Prospects

JLab infusion and LG flux expulsion update

Fabrication and testing of III-V/Si tandem solar cells

High Q via N infusion R&D at Jefferson Lab

Half-Metallic Ferromagnetism in Fe-doped Zn3P2 From First-Principles Calculations G. JAI GANESH and S. MATHI JAYA Materials Science Group, Indira Gandhi.

Transport property of the iodine doped

Read: Chapter 2 (Section 2.3)

1.6 Magnetron Sputtering Perpendicular Electric Magnetic Fields.

Partial Electronic and Ionic Conductivities of

Introduction to Materials Science and Engineering

MIT Amorphous Materials 10: Electrical and Transport Properties

Transport Zuoan Li NorFERM-2008.

Wally Dream Job.

H.Nakatsugawa1), K.Nagasawa1) and Y.Okamoto2)

Elemental silicon is melted and grown into a single crystal ingot

Presentation transcript:

MacDiarmid Institute for Advanced Materials and NanotechnologyVictoria University of Wellington Andrew Preston Wellington, New Zealand Rare-earth nitride films Growth and Transport Measurements

Rare-earth nitride films: Growth and Transport Introduction Largely ionic: RE 3+ N 3- Rock salt structure Lattice constants React with atmosphere (passivate with capping layer) Oxygen content? Magnetic ordering and electronic structure –See talk this afternoon

Rare-earth nitride films: Growth and Transport Growth - N 2 UHV –P base < mbar –O 2, H 2 O ~ ppm –N 2 : 5N (scrubbed) –RE: 3N Growth –P N 2 ~ mbar –Deposit ~ 0.1nm.s -1 Surprising!

Rare-earth nitride films: Growth and Transport Growth - IAD Kaufman type Ion Gun –Flux ~ 0.05mA.cm -2 –E k ~ eV N + :RE ≥ 1:1

Rare-earth nitride films: Growth and Transport Characterisation Good 1:1 stoichiometry ± 2% (RBS) Low O content, uniform films (SIMS) 8nm crystallites (XRD)

Rare-earth nitride films: Growth and Transport Nitrogen content N vacancies apparently dope the film.

Rare-earth nitride films: Growth and Transport Resistivity IAD –lnρ ~ (1/T)1/4 –Variable range Hopping N 2 –lnρ ~ 1 / T –Dopants pinned near mobility edge

Rare-earth nitride films: Growth and Transport Resistivity IAD –lnρ ~ ( 1 / T ) 1/4 –Variable range Hopping N 2 –lnρ ~ 1 / T –Dopants pinned near mobility level Key point: IAD films have fewer N vacancies

Rare-earth nitride films: Growth and Transport Summary SmN, ErN and DyN are all semiconducting above 100K –So is GdN Granville et al, “Semiconducting ground state of GdN thin films”, Phys. Rev. B 73, (2006) Conductivity controlled by N vacancies Activated nitrogen (IAD) brings carrier concentration down Much more this afternoon: Electronic structure of SmN, DyN and GdN –D40 (2.30pm), room 503, talk at 5.18pm

Rare-earth nitride films: Growth and Transport Acknowledgements Ben Ruck, Simon Granville, Felix Budde, Jianping Zhong, Joe Trodahl –Victoria University of Wellington –The MacDiarmid Institute Tony Bittar, Grant Williams –Industrial Research Ltd.

Rare-earth nitride films: Growth and Transport Extra Info – SIMS profile N 2 GdN (GaN cap)

Rare-earth nitride films: Growth and Transport Extra Info – N 2 content

Rare-earth nitride films: Growth and Transport Extra Info – Hall effect In progress (have preliminary results) –Need: low carier concentration, high mobility –Have: high carrier concentration, low mobility!

Rare-earth nitride films: Growth and Transport Extra Info - XRD Expanded lattice constant

Rare-earth nitride films: Growth and Transport Ion Energy GdN (0,50,100,500eV)

Rare-earth nitride films: Growth and Transport Extra Info – RBS

Rare-earth nitride films: Growth and Transport Questions Oxygen content Magnetic ordering and electronic structure –See talk this afternoon