National Aeronautics and Space Administration 1 The Effects of Extreme Ambient Temperature on Operation of Commercial-Off-the-Shelf Silicon-Germanium, Silicon-on- Insulator, and Mixed Signal Semiconductor Devices Richard L. Patterson NASA Glenn Research Center Ahmad Hammoud ASRC Aerospace Corporation NASA Glenn Research Center New Electronic Technologies and Insertion Into Flight Programs Workshop January 30 - February 1, 2007

National Aeronautics and Space Administration 2 Distance from SunSpacecraft Temperature (Sphere, Abs. = 1, Emiss. = 1 Internal Power = 0) Mercury 448 K 175  C Venus 328 K 55  C Earth 279 K 6  C Mars 226 K -47  C Jupiter 122 K -151  C Saturn 90 K -183  C Uranus 64 K -209  C Neptune 51 K -222  C ( Pluto ) 44 K -229  C NASA GRC Extreme Temperature Electronics Temperature Data for Planetary Missions

National Aeronautics and Space Administration 3 NASA GRC Extreme Temperature Electronics Mercury Slow Rotation Minimum Temp -180 ºC Mars Windy & Dusty -140 ºC to +20 ºC Jupiter Cloudtops -140 ºC Europa Icy Surface -188 ºC to -143 ºC Saturn Cloudtops Mean Temp -185 ºC Titan Surface Temp -180 ºC Uranus Cloudtops -212 ºC Neptune Mean Temp -225 ºC Pluto Mean Temp -236 ºC Planet Temperature Data

National Aeronautics and Space Administration 4 NASA GRC Extreme Temperature Electronics Earth’s Moon

National Aeronautics and Space Administration 5 NASA GRC Extreme Temperature Electronics NEPP Supported Task # Requirements and Benefits of Low Temperature Electronics

National Aeronautics and Space Administration 6 NASA GRC Extreme Temperature Electronics

National Aeronautics and Space Administration 7 NASA GRC Extreme Temperature Electronics SiGe Hetero-junction Bipolar Power Transistor, HBT (GPD HBT-16-25) 25  C -195  C

National Aeronautics and Space Administration 8 NASA GRC Extreme Temperature Electronics SiGe Hetero-junction Bipolar Power Transistor, HBT (GPD HBT-16-25)

National Aeronautics and Space Administration 9 NASA GRC Extreme Temperature Electronics Effects of thermal cycling (12 Cycles; -195  C to +85  C) SiGe Hetero-junction Bipolar Power Transistor, HBT (GPD HBT-16-25) Pre-cycling at -195  C Post-cycling at -195  C

National Aeronautics and Space Administration 10 NASA GRC Extreme Temperature Electronics Oscillator Frequency vs Tuning Voltage of a SiGe Voltage-Controlled Oscillator (MAXIM 2622 VCO)

National Aeronautics and Space Administration 11 NASA GRC Extreme Temperature Electronics SiGe Hetero-junction Bipolar Power Transistor, HBT (Northrop Grumman ET12F0001AM)

National Aeronautics and Space Administration 12 NASA GRC Extreme Temperature Electronics Pre-cycling Post-cycling SiGe Power Diode (GPD SG-21-41) Effects of thermal cycling (12 Cycles; -195  C to +85  C)

National Aeronautics and Space Administration 13 NASA GRC Extreme Temperature Electronics SiGe Radio Frequency Amplifier (Texas Instruments THS4302)

National Aeronautics and Space Administration 14 NASA GRC Extreme Temperature Electronics SiGe Radio Frequency Amplifier (Maxim 2644)

National Aeronautics and Space Administration 15 NASA GRC Extreme Temperature Electronics Device functioned with temperature down to 35 K Bias was adjusted to maximize gain at midband Successful cold-restart at 35 K after 7 min. power off Texas Instruments THS4302 MAXIM 2644 Evaluation Kit Device functioned with temperature down to 60 K Gain dropped off significantly below 60 K (Bias may need to be adjusted) Successful cold-restart at 60 K after 7 min. power off Results for Two SiGe Radio Frequency Amplifiers

National Aeronautics and Space Administration 16 NASA GRC Extreme Temperature Electronics Test Setup for SiGe RF Amplifier Testing

National Aeronautics and Space Administration 17 NASA GRC Extreme Temperature Electronics +100  C-195  C 20  C Waveforms at Various Temperatures of an SOI 555 Timer (Cissoid CHT-555) f trigger = 25 kHz Trigger Threshold Output

National Aeronautics and Space Administration 18 NASA GRC Extreme Temperature Electronics +100  C -195  C 20  C Output Waveforms of an SOI Crystal Clock Generator At Various 1 MHz (Honeywell HTCCG) F OU T F OUT/2 F OUT/4 F OUT/8

National Aeronautics and Space Administration 19 NASA GRC Extreme Temperature Electronics Gain & Phase of an SOI Operational Amplifier Analog Devices AD8065 Data taken after 10 cycles between -195  C & +90  C

National Aeronautics and Space Administration 20 NASA GRC Extreme Temperature Electronics Output Voltage of an SOI CMOS Voltage Reference Vs Temperature Under No-Load (Cissoid CHT-BG-050)

National Aeronautics and Space Administration 21 NASA GRC Extreme Temperature Electronics Load Regulation of an SOI CMOS Voltage Reference At Various Temperatures (Cissoid CHT-BG-050)

National Aeronautics and Space Administration 22 NASA GRC Extreme Temperature Electronics at 25  C at -195  C at +100  C I D vs V DS Curves of an SOI N-Channel Power FET at Three Temperatures (Honeywell HTNFET)

National Aeronautics and Space Administration 23 NASA GRC Extreme Temperature Electronics Drain-Source Resistance (at I D =0.1A, V GS =4V) of an SOI N-Channel Power FET vs Temperature (Honeywell HTNFET)

National Aeronautics and Space Administration 24 NASA GRC Extreme Temperature Electronics