Trento, Feb.28, 2005 Workshop on p-type detectors 1 Comprehensive Radiation Damage Modeling of Silicon Detectors Petasecca M. 1,3, Moscatelli F. 1,2,3,

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Trento, Feb.28, 2005 Workshop on p-type detectors 1 Comprehensive Radiation Damage Modeling of Silicon Detectors Petasecca M. 1,3, Moscatelli F. 1,2,3, Scarpello C. 1, Passeri D. 1,3, Pignatel G.U. 1,3 1 DIEI - Università di Perugia, via G.Duranti,93 - Italy 2 IMM-CNR sez.di Bologna, via Gobetti 101 – Italy 3 INFN sez. Perugia – via Pascoli, 10 – Italy In the framework of RD50-CERN Collaboration

2 OUTLINE development of the 3-level radiation damage model for n-type silicon development of the 3-level radiation damage model for n-type silicon development of the 2-level radiation damage model for p-type silicon development of the 2-level radiation damage model for p-type silicon simulation of Charge Collection Efficiency (CCE) in irradiated (n-type) silicon detectors simulation of Charge Collection Efficiency (CCE) in irradiated (n-type) silicon detectors

3 Simulation tool: ISE-TCAD – discrete time and space solution of drift/diffusion and continuity equations Damage modelling: - Deep levels: E t,  n and  p - Deep levels: E t,  n and  p - SRH statistics - SRH statistics - Uniform density of defect concentration - Uniform density of defect concentration Radiation damage Effects to simulate: - The increasing of the Leakage Current - The increasing of the Full Depletion Voltage - The decreasing of the Charge Collection Efficiency

4 Simulation setup Simulated device structure and parameters: Doping profiles: Doping profiles: N and P doped substrates (7  cm -3 )  6kΩcm. N and P doped substrates (7  cm -3 )  6kΩcm. Charge concentration at the silicon-oxide interface of : Charge concentration at the silicon-oxide interface of : 4  cm -3 pre-irradiation 4  cm -3 pre-irradiation 1  cm -3 post-irradiation 1  cm -3 post-irradiation Optimized variable mesh definition Optimized variable mesh definition Temperature = 300 K Temperature = 300 K D (thickness) = um D (thickness) = um Guard RingDiodeGuard Ring 6µm 40µm 15µm9µm D Back

5 Simulation setup Guard Ring Diode - Variable mesh definition:  the mesh is better refined in correspondence of the critical points of the device to improve simulator performance. - The typical electric field distribution at the depletion voltage of the diode.

6 Level [eV] Assignment σ n [cm -2 ] σ p [cm -2 ] η [cm -1 ] E c VV (-/0) 1· · * E c VVO (-/0) 1· · E v C i O i (+/0) 1· · The n-type (modified) 3-Level Radiation Damage Model* * Angarano, Bilei, Giorgi, Ciampolini, Mihul, Militaru, Passeri, Scorzoni, CERN, Geneve, CMS CR 2000/006, 2000 σ n/p [cm -2 ]: cross section η [cm -1 ]: introduction rate η * η=26 takes into account cluster defects

7 Level [eV] Assignment σ n [cm -2 ] σ p [cm -2 ] η [cm -1 ] E c VV (-/0) 1· · * E c VVO (-/0) 1· · E v C i O i (+/0) 1· · The n-type (modified) 3-Level Radiation Damage Model* * [Angarano, Bilei, Giorgi, Ciampolini, Mihul, Militaru, Passeri, Scorzoni, CERN, Geneve, CMS CR 2000/006, 2000] α [A/cm] simulated 5.25±0.02· α [A/cm] experimental* 5.4÷6.7· * η * η = 26 takes into account cluster defects α 80/60 [A/cm] ROSE-RD48 4.0·10 -17

8 (*) [N. Zangenberg, et al.,Nuc. Instr. And Meth B 186 (2002) 71-77] (*) [N. Zangenberg, et al.,Nuc. Instr. And Meth B 186 (2002) 71-77] [M. Ahmed, et al., Nuc. Instr. And Meth A 457 (2001) ] [M. Ahmed, et al., Nuc. Instr. And Meth A 457 (2001) ] Level*Ass. σ n [cm -2 ] Experimental* σ p [cm -2 ] Experimental* σ n [cm -2 ] [cm -2 ] **σ p [cm -2 ] η [cm -1 ] E c -0.42eV VV (-/0) 2· · β [cm -1 ] experimental 4,0±0,4 ·10 -3 ** 2 order of magnitude higher β [cm -1 ] simulated 3,72 ·10 -3 The p-type One-Level Radiation Damage Model Measures extracted from [M. Lozano, et al., RD50 workshop, Firenze, Oct 2004]

9 (*) [N. Zangenberg, et al.,Nuc. Instr. And Meth B 186 (2002) 71-77] [M. Ahmed, et al., Nuc. Instr. And Meth A 457 (2001) ] [M. Ahmed, et al., Nuc. Instr. And Meth A 457 (2001) ] Level*Ass. σ n [cm -2 ] Experimental* σ p [cm -2 ] Experimental* σ n [cm -2 ] [cm -2 ] σ p [cm -2 ] σ p [cm -2 ]η [cm -1 ] E c -0.42eV VV (-/0) 2· · α [A/cm] simulated 6,6 · α [A/cm] experimental 6,52±0,11 · The p-type One-Level Radiation Damage Model Measures extracted from [M. Lozano, et al., RD50 workshop, Firenze, Oct 2004]

10 The p-type Two-Level Radiation Damage Model [(**) Levels selected from: M. Ahmed, et al., Nuc. Instr. And Meth A 457 (2001) S.Pirolo et al., Nuc. Instr. And Meth. A 426 (1996) ] S.Pirolo et al., Nuc. Instr. And Meth. A 426 (1996) ] * 1 order of magnitude higher β [cm -1 ] experimental 4,0±0,4 ·10 -3 β [cm -1 ] simulated 3.98·10 -3 Level**Ass. σ n [cm -2 ] Experimental σ p [cm -2 ] Experimental σ n [cm -2 ] [cm -2 ] *σ p [cm -2 ] η [cm -1 ] E c eV VV (-/0) 2· · * E c eV VVV (-/0) 5· · * Measures extracted from [M. Lozano, et al., RD50 workshop, Firenze, Oct 2004] *η *η Moll = 0.9  1.8

11 α [A/cm] simulated 3.75· α [A/cm] reported (*?) 6,52±0,1 · Measures extracted from [M. Lozano, et al., RD50 workshop, Firenze, Oct 2004] The p-type Two-Level Radiation Damage Model Level**Ass. σ n [cm -2 ] Experimental σ p [cm -2 ] Experimental σ n [cm -2 ] [cm -2 ] *σ p [cm -2 ] η [cm -1 ] E c eV VV (-/0) 2· · E c eV VVV (-/0) 5· · [(**) Levels selected from: M. Ahmed, et al., Nuc. Instr. And Meth A 457 (2001) S.Pirolo et al., Nuc. Instr. And Meth. A 426 (1996) ] S.Pirolo et al., Nuc. Instr. And Meth. A 426 (1996) ] * 1 order of magnitude higher

12 LevelAss. σ n [cm -2 ] Experimental σ p [cm -2 ] Experimental σ n [cm -2 ] [cm -2 ] *σ p [cm -2 ] η [cm -1 ] E c -0.42eV VV (-/0) 2· · E c -0.46eV VVV (-/0) 5· · E v +0.36eV ? C i O i ? 2.5· · · · β [cm -1 ] experimental 4,0±0,4 ·10 -3 β [cm -1 ] simulated 3.98·10 -3 * 1 order of magnitude higher The p-type Three-Level Radiation Damage Model: no improvement due to the donor defect level α [A/cm] simulated 3.75· α [A/cm] experimental 6,52±0,11 · Measures extracted from [M. Lozano, et al., RD50 workshop, Firenze, Oct 2004]

13 CCE Simulation MIP: 80 e-h pairs/ µm cylinder diameter = 2µm

14 CCE Simulation

15 CCE Simulation

16 CCE Simulation

17 CCE Simulation

18 CCE Simulation

19 CCE Simulation

20 * Measurements from Allport, Casse et al. NIMA 501 (2003) CCE vs BIAS voltage for n-type silicon Simulation data well reproduce experimental* measure at the fluences of 1·10 14 n/cm 2 and 2.5·10 14 n/cm 2

21 CCE vs BIAS for n-type Simulation data at Fluence of 1·10 15 n/cm 2 and 1·10 16 n/cm 2 Problem: the diode collects charge also in the not depleted area. At a fluence of 5·10 14 : Simulated CCE = 75% Estimated (*) = 55% (*) [Bloch et al, NIMA 517 (2004) ]

22 CCE vs BIAS for n-type Discussion about the ISE T-CAD Recombination Time model Default parameters of the Scharfetter model: N REF =10 16 cm- 3, γ=1, τ min =0, τ max(e) =3 µs, τ max(h) =10 µs β e [ cm 2 /ns]β h [ cm 2 /ns] where From RD50 status Report (2004): change the N REF parameter in order to obtain the correct value of the recombination time (*) J.G.Fossum, D.S. Lee, Solid-State Electronics, vol.25,no.8 (1982).

23 Scharfetter ISE T-CAD Recombination Time model Default parameters: N REF =10 16 cm- 3, γ=1, τ min =0, τ max(e) =3 µs, τ max(h) =10 µs (one pole in the TF) Aim: modify/adapt the Scharfetter model to simulate the effect of deep- level defects on the reduction of carrier life-time

24 Conclusions Irradiated diodes have been analyzed considering a three levels simulation model for p-type and n-type Si substrates: The two-level model for the p-type and the three-level for n-type fit experimental data for the Leakage Current and Full Depletion Voltage The C i O i acceptor level for p-type silicon seems to be un-influential (at Room Temperature) The three-level for n-type fits CCE experimental data only for fluences up to 2.5·10 14 n/cm 2. Scharfetter recombination time empirical model can be eventually adapted to fit CCE experimental data at higher fluences (first good n/cm 2 ).