Supply Voltage Biasing Andy Whetzel and Elena Weinberg University of Virginia.

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Presentation transcript:

Supply Voltage Biasing Andy Whetzel and Elena Weinberg University of Virginia

Agenda Background o FinFET technology Problem and approach Our design Implementation Results Discussion Conclusion

Background FinFET Technology Scalable Higher drive strength per unit silicon Image from: ummaries/FINFET_image004.jpg Image from: mage jpg

Problem Body biasing does not work on FinFETs MOSFET vs. FinFET:

Approach Supply voltage biasing with FreePDK Contributions: 1.Our design for supply voltage biasing 2.A new knob 3.A new technique for decreasing delay in integrated circuits (ICs) implementing FinFET technology

Supply Biased Inverter Gate

Ring Oscillator 11 Inverters Swept bias voltage from -0.1 V to 0.1 V o 1.1 V nominal Measured frequency, active power, and static power vs. bias voltage

Ring Oscillator Results

NAND and NOR Gates Designed similarly to supply biased inverter o Double the transistors, one high and one low output Setup in ring oscillator configuration such that high output is tied to NMOS and low output is tied to PMOS in subsequent gate Results were similar, therefore we obtained the motivation to pursue combinational logic other than a ring oscillator

Full Adder

8 Bit Ripple Carry Adder

Discussion Our design shows potential to reduce delay in ICs Trade-offs: Area Power

Conclusion We successfully designed and implemented a new knob Our design decreases delay in ICs implementing FinFET technology Area and power trade-offs Future Work Further investigation of static and switching power in FinFETs under supply bias Explore accuracy of gate induced drain leakage (GIDL) Generating bias voltages

Questions?

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