High Quality & High Performance Memory Provider for Net work Sol ution 1/19 High Quality & High Performance Memory Provider for Network Solution NETSOL.

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Presentation transcript:

High Quality & High Performance Memory Provider for Net work Sol ution 1/19 High Quality & High Performance Memory Provider for Network Solution NETSOL Co., LTD NETSOL Product list Synchronous SRAM Asynchronous Fast SRAM 2013 May

High Quality & High Performance Memory Provider for Net work Sol ution 2/19 Table of Contents Standard Synchronous SRAM SPB and FT … 3 NTSRAM : NT-SPB and NT-FT… 4 Quadruple and DDR Synchronous SRAM Quadruple-I… 5 Quadruple-II… 6 DDR-II, Common I/O… 7 DDR-II, Separate I/O… 8 Quadruple-II+, 2.0 CL, without ODT… 9 Quadruple-II+, 2.0 CL, with ODT… 10 Quadruple-II+, 2.5 CL, without ODT… 11 Quadruple-II+, 2.5 CL, with ODT… 12 DDR-II+, 2.0 CL, without ODT… 13 DDR-II+, 2.0 CL with ODT… 13 DDR-II+, 2.5 CL without ODT… 14 DDR-II+, 2.5 CL with ODT… 14 Asynchronous Fast SRAM… 15 Product Code Information… 16~19

High Quality & High Performance Memory Provider for Net work Sol ution 3/19 DensityOrg.Part Number Operation Mode Vdd (V) Speed (MHz) Package Avail- ability 4Mb 128Kx36 S7A403630MSPB2.5/3.3250MHz100TQFPNow S7B403635MFT2.5/3.3250MHz100TQFPNow 256Kx18 S7A401830MSPB2.5/3.3250MHz100TQFPNow S7B401835MFT2.5/3.3250MHz100TQFPNow 9Mb 256Kx36 S7A803630MSPB2.5/3.3250MHz100TQFPNow S7B803635MFT2.5/3.3250MHz100TQFPNow 512Kx18 S7A801830MSPB2.5/3.3250MHz100TQFPNow S7B801835MFT2.5/3.3250MHz100TQFPNow 18Mb 512Kx36 S7A163630MSPB2.5/3.3250MHz100TQFPNow S7B163635MFT2.5/3.3250MHz100TQFPNow 1Mx18 S7A161830MSPB2.5/3.3250MHz100TQFPNow S7B161835MFT2.5/3.3250MHz100TQFPNow 36Mb 1Mx36 S7A323630MSPB2.5/3.3250MHz100TQFPNow S7B323635MFT2.5/3.3250MHz100TQFPNow 2Mx18 S7A321830MSPB2.5/3.3250MHz100TQFPNow S7B321835MFT2.5/3.3250MHz100TQFPNow Standard Synchronous SRAM : SPB and FT Notes 1. All of SPB products and FT are based on RoHS6, lead free 100TQFP package. 2. SPB: Synchronous Pipelined Burst, FT: Flow-Through 3. Both commercial temperature range and industrial are available. 4. Single bin policy by 250Mhz for SPB and by 6.5ns for FT. Faster than 250Mhz are possible upon request. 5. Non-parity such as 32-bits is possible upon request. 6. All of SPB is based on 2E1D, and 2E2D could be considered upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 4/19 DensityOrg.Part Number Operation Mode Vdd (V) Speed (MHz) Package Avail- ability 4Mb 128Kx36 S7N403631MNT-SPB2.5/3.3250MHz100TQFPNow S7M403635MNT-FT2.5/3.3250MHz100TQFPNow 256Kx18 S7N401831MNT-SPB2.5/3.3250MHz100TQFPNow S7M401835MNT-FT2.5/3.3250MHz100TQFPNow 9Mb 256Kx36 S7N803631MNT-SPB2.5/3.3250MHz100TQFPNow S7M803635MNT-FT2.5/3.3250MHz100TQFPNow 512Kx18 S7N801831MNT-SPB2.5/3.3250MHz100TQFPNow S7M801835MNT-FT2.5/3.3250MHz100TQFPNow 18Mb 512Kx36 S7N163631MNT-SPB2.5/3.3250MHz 100TQFP 165FBGA Now S7M163635MNT-FT2.5/3.3250MHz 100TQFP 165FBGA Now 1Mx18 S7N161831MNT-SPB2.5/3.3250MHz100TQFPNow S7M161835MNT-FT2.5/3.3250MHz100TQFPNow 36Mb 1Mx36 S7N323631MNT-SPB2.5/3.3250MHz 100TQFP 165FBGA Now S7M323635MNT-FT2.5/3.3250MHz 100TQFP 165FBGA Now 2Mx18 S7N321831MNT-SPB2.5/3.3250MHz100TQFPNow S7M321835MNT-FT2.5/3.3250MHz100TQFPNow 72Mb 1Mx36 S7N643631MNT-SPB2.5/3.3250MHz100TQFPEarly Q3’13 S7M643635MNT-FT2.5/3.3250MHz100TQFPEarly Q3’13 2Mx18 S7N641831MNT-SPB2.5/3.3250MHz100TQFPEarly Q3’13 S7M641835MNT-FT2.5/3.3250MHz100TQFPEarly Q3’13 Standard Synchronous SRAM : NTSRAM (NT-SPB & NT-FT) Notes 1. All of NTSRAM products are based on RoHS6. All NTSRAM is based on 100TQFP including 165FBGA for NT-SPB. 2. NTSRAM: Non-Turnaround Static Random Access Memory 3. Both commercial temperature range and industrial are available. 4. Single bin policy by 250Mhz for NT-SPB and by 6.5ns for NT-FT. Faster than 250Mhz are possible upon request. 5. Non-parity such as 32-bits is possible upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 5/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7Q163662M 21.8/2.51.5/1.8167MHz165FBGANow 1Mx18S7Q161862M 512Kx36S7Q163664M 41.8/2.51.5/1.8167MHz165FBGANow 1Mx18S7Q161864M Quadruple and DDR Synchronous SRAM : Quadruple-I Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available.

High Quality & High Performance Memory Provider for Net work Sol ution 6/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7R163682M / FBGANow 1Mx18S7R161882M 2Mx9S7R160982M 512Kx36S7R163684M / FBGANow 1Mx18S7R161884M 2Mx9S7R160984M 36Mb 1Mx36S7R323682M / FBGANow 2Mx18S7R321882M 4Mx9S7R320982M 1Mx36S7R323684M / FBGANow 2Mx18S7R321884M 4Mx9S7R320984M 72Mb 2Mx36S7R643682M / FBGA Early Q3’13 4Mx18S7R641882M 8Mx9S7R640982M 2Mx36S7R643684M / FBGA Early Q3’13 4Mx18S7R641884M 8Mx9S7R640984M Quadruple and DDR Synchronous SRAM : Quadruple-II Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. Lower bins such as 200Mhz and 167Mhz are recommended to 250Mhz.

High Quality & High Performance Memory Provider for Net work Sol ution 7/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7I163682M / FBGANow 1Mx18S7I161882M 512Kx36S7I163684M / FBGANow 1Mx18S7I161884M 36Mb 1Mx36S7I323682M / FBGANow 2Mx18S7I321882M 1Mx36S7I323684M / FBGANow 2Mx18S7I321884M 72Mb 2Mx36S7I643682M / FBGA Early Q3’13 4Mx18S7I641882M 2Mx36S7I643684M / FBGA Early Q3’13 4Mx18S7I641884M Quadruple and DDR Synchronous SRAM : DDR-II, Common I/O Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. Lower bins such as 200Mhz and 167Mhz are recommended to 250Mhz.

High Quality & High Performance Memory Provider for Net work Sol ution 8/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7J163682M / , 300, FBGANow 1Mx18S7J161882M 2Mx9S7J160984M 36Mb 512Kx36S7J323682M / , 300, FBGANow 1Mx18S7J321882M 2Mx9S7J320984M 72Mb 512Kx36S7J643682M / , 300, FBGA Early Q3’13 1Mx18S7J641882M 2Mx9S7J640984M Quadruple and DDR Synchronous SRAM : DDR-II, Separate I/O Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. Lower bins such as 200Mhz and 167Mhz are recommended to 250Mhz.

High Quality & High Performance Memory Provider for Net work Sol ution 9/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7S1636T2M / FBGAU/C 1Mx18S7S1618T2M 2Mx9S7S1609T2M 512Kx36S7S1636T4M / FBGANow 1Mx18S7S1618T4M 2Mx9S7S1609T4M 36Mb 1Mx36S7S3236T2M / FBGAU/C 2Mx18S7S3218T2M 4Mx9S7S3209T2M 1Mx36S7S3236T4M / FBGANow 2Mx18S7S3218T4M 4Mx9S7S3209T4M 72Mb 2Mx36S7S6436T2M / FBGAU/C 4Mx18S7S6418T2M 8Mx9S7S6409T2M 2Mx36S7S6436T4M / FBGA Early Q3’13 4Mx18S7S6418T4M 8Mx9S7S6409T4M ▣ 2.0 Clock Latency, without ODT (On Die Termination) Quadruple and DDR Synchronous SRAM : Quadruple-II+, 2.0 CL, without ODT Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. U/C, under consideration, stands for products available upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 10/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7T1636T2M / FBGAU/C 1Mx18S7T1618T2M 2Mx9S7T1609T2M 512Kx36S7T1636T4M / FBGANow 1Mx18S7T1618T4M 2Mx9S7T1609T4M 36Mb 1Mx36S7T3236T2M / FBGAU/C 2Mx18S7T3218T2M 4Mx9S7T3209T2M 1Mx36S7T3236T4M / FBGANow 2Mx18S7T3218T4M 4Mx9S7T3209T4M 72Mb 2Mx36S7T6436T2M / FBGAU/C 4Mx18S7T6418T2M 8Mx9S7T6409T2M 2Mx36S7T6436T4M / FBGA Early Q3’13 4Mx18S7T6418T4M 8Mx9S7T6409T4M ▣ 2.0 Clock Latency, with ODT (On Die Termination) Quadruple and DDR Synchronous SRAM : Quadruple-II+, 2.0 CL, with ODT Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. U/C, under consideration, stands for products available upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 11/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7S1636U2M / FBGAU/C 1Mx18S7S1618U2M 2Mx9S7S1609U2M 512Kx36S7S1636U4M / FBGANow 1Mx18S7S1618U4M 2Mx9S7S1609U4M 36Mb 1Mx36S7S3236U2M / FBGANow 2Mx18S7S3218U2M 4Mx9S7S3209U2M 1Mx36S7S3236U4M / FBGANow 2Mx18S7S3218U4M 4Mx9S7S3209U4M 72Mb 2Mx36S7S6436U2M / FBGA Early Q3’13 4Mx18S7S6418U2M 8Mx9S7S6409U2M 2Mx36S7S6436U4M / FBGA Early Q3’13 4Mx18S7S6418U4M 8Mx9S7S6409U4M ▣ 2.5 Clock Latency, without ODT (On Die Termination) Quadruple and DDR Synchronous SRAM : Quadruple-II+, 2.5 CL, without ODT Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. U/C, under consideration, stands for products available upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 12/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7T1636U2M / FBGAU/C 1Mx18S7T1618U2M 2Mx9S7T1609U2M 512Kx36S7T1636U4M / FBGANow 1Mx18S7T1618U4M 2Mx9S7T1609U4M 36Mb 1Mx36S7T3236U2M / FBGAU/C 2Mx18S7T3218U2M 4Mx9S7T3209U2M 1Mx36S7T3236U4M / FBGANow 2Mx18S7T3218U4M 4Mx9S7T3209U4M 72Mb 2Mx36S7T6436U2M / FBGA Early Q3’13 4Mx18S7T6418U2M 8Mx9S7T6409U2M 2Mx36S7T6436U4M / FBGA Early Q3’13 4Mx18S7T6418U4M 8Mx9S7T6409U4M ▣ 2.5 Clock Latency, with ODT (On Die Termination) Quadruple and DDR Synchronous SRAM : Quadruple-II+, 2.5 CL, with ODT Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available. 3. U/C, under consideration, stands for products available upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 13/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- Ability 18Mb 512Kx36S7K1636T2M / FBGANow 1Mx18S7K1618T2M 36Mb 1Mx36S7K3236T2M / FBGANow 2Mx18S7K3218T2M 72Mb 2Mx36S7K6436T2M / FBGA Early Q3’13 4Mx18S7K6418T2M ▣ 2.0 Clock Latency, without ODT (On Die Termination) DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7L1636T2M / FBGANow 1Mx18S7L1618T2M 36Mb 1Mx36S7L3236T2M / FBGANow 2Mx18S7L3218T2M 72Mb 2Mx36S7L6436T2M / FBGA Early Q3’13 4Mx18S7L6418T2M ▣ 2.0 Clock Latency, with ODT (On Die Termination) Quadruple and DDR Synchronous SRAM : DDR-II+, Common I/O, 2.0CL Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available.

High Quality & High Performance Memory Provider for Net work Sol ution 14/19 DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7K1636U2M / FBGANow 1Mx18S7K1618U2M 36Mb 1Mx36S7K3236U2M / FBGANow 2Mx18S7K3218U2M 72Mb 2Mx36S7K6436U2M / FBGA Early Q3’13 4Mx18S7K6418U2M ▣ 2.5 Clock Latency, without ODT (On Die Termination) DensityOrg.Part Number Burst Length Vdd (V) VddQ (V) Speed (MHz) Package Avail- ability 18Mb 512Kx36S7L1636U2M / FBGANow 1Mx18S7L1618U2M 36Mb 1Mx36S7L3236U2M / FBGANow 2Mx18S7L3218U2M 72Mb 2Mx36S7L6436U2M / FBGA Early Q3’13 4Mx18S7L6418U2M ▣ 2.5 Clock Latency, with ODT (On Die Termination) Quadruple and DDR Synchronous SRAM : DDR-II+, Common I/O, 2.5CL Notes 1. All of RoHS5 or leaded type is recommended to convert it into RoHS6 or lead free. 2. Both commercial temperature range and industrial are available.

High Quality & High Performance Memory Provider for Net work Sol ution 15/19 DensityOrg.Part Number Vdd (V) Speed -tAA(ns) PackageAvailability 4Mb 256Kx16 S6R4016V1M TSOP2Now S6R4016C1M TSOP2Now 512Kx8 S6R4008V1M TSOP2Now S6R4008C1M TSOP2Now 8Mb 512Kx16 S6R8016V1M TSOP2Now S6R8016C1M TSOP2Now 1Mx8 S6R8008V1M TSOP2Now S6R8008C1M TSOP2Now 16Mb 1Mx16 S6R1616V1M TSOP1Now 54TSOP2U/C S6R1616C1M TSOP1Now 54TSOP2U/C 2Mx8 S6R1608V1M TSOP1Now 54TSOP2U/C S6R1608C1M TSOP1Now 54TSOP2U/C Asynchronous Fast SRAM ▣ Packaged Product DensityOrg.Part Number Vdd (V) Speed -tAA(ns) Test Level Availability 1Mb~16Mbx32/16/8/4S6R16-1M3.3/510W1Now ▣ Wafer Product Notes 1. All of packaged asynchronous fast products are based on RoHS6 or lead free. 2. Industrial temperature range is recommended, but commercial one is available. 3. U/C, under consideration, stands for products available upon request.

High Quality & High Performance Memory Provider for Net work Sol ution 16/19 S 7 X X X X X X X X – X X X X X X X (1) Netsol Memory : S (2) Sync SRAM : 7 (3) Functional Mode A : Sync Pipelined Burst B : Flow Through H : Double Data Rate I, Common I/O I : Double Data Rate II, Common I/O J : Double Data Rate II, Separate I/O K : Double Data Rate II+, Common I/O L : Double Data Rate II+, Common I/O with ODT M : NTSRAM + Flow Through N : NTSRAM + Sync Pipelined Burst Q : Quadruple SRAM I R : Quadruple SRAM II S : Quadruple SRAM II+ T : Quadruple SRAM II+ with ODT (4) ~ (5) Density 40 : 4M~4.5M 80 : 8M~9M 16 : 16M~18M 32 : 32M~36M 64 : 64M~72M 44 : 144M 28 : 288M 57 : 576M 1G : 1G (6) ~ (7) Organization 08: x8 09 : x9 18 : x18 32 : x32 36 : x36 72 : x72 44 : x144 (8) ~ (9) Vcc, Interface, Mode 30 : 2.5V/3.3V Wide, LVTTL, 2E1D 31 : 2.5V/3.3V Wide, LVTTL, 2E2D 35 : 2.5V/3.3V Wide, LVTTL, SB-FT 62 : 2.5V/1.8V, HSTL, Burst2 64 : 2.5V/1.8V, HSTL, Burst4 82 : 1.8V,HSTL,Burst2 84 : 1.8V,HSTL,Burst4 T2 : 1.8V,2clock latency,Burst2 T4 : 1.8V,2clock latency,Burst4 U2 : 1.8V,2.5clock latency,Burst2 U4 : 1.8V,2.5clock latency,Burst4 (10) Generation M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation (11) “ ㅡ ” Synchronous SRAM Code Information (1/2) Standard Sync., Quadruple & DDR

High Quality & High Performance Memory Provider for Net work Sol ution 17/19 S 7 X X X X X X X X – X X X X X X X (13) Temp A : Automotive (-40 ℃ ~ +125 ℃ ) I : Industrial (-40 ℃ ~ +85 ℃ ) C : Commercial (0 ℃ ~ +70 ℃ ) ● FT, NT-FT 60 : 6.0ns65 : 6.5ns 70 : 7.0ns75 : 7.5ns 80 : 8.0ns85 : 8.5ns 90 : 9.0ns 10 : 10ns (16) Packing “Packing Type Reference” MarkingPacking Type 0 (Number)Tray, Tube TTape & Reel (17)~(18) Special code for customer demand 00 : default (12) Package P : TQFP(LF) Q : TQFP E : FBGA(LF) F : FBGA G : PBGA(LF) H : PBGA - LF means Lead Free * Note (1)~ (14) : customer ordering code, appears on top of PKG (16) ~ (18) : code for Labeling, appears on label on Box (14)~(15) Speed ● SPB, NT-SPB, DDR, DDR- I/ II/ II+, Quadruple- I/ II/ II+ 13 : 133MHz16 : 166MHz 20 : 200MHz25 : 250MHz 30 : 300MHz33 : 333MHz 40 : 400MHz45 : 450MHz 50 : 500MHz55 : 550MHz 60 : 600MHz65 : 650MHz 66 : 666MHz 70 : 700MHz 75 : 750MHz Synchronous SRAM Code Information (2/2) Standard Sync., Quadruple & DDR

High Quality & High Performance Memory Provider for Net work Sol ution 18/19 S 6 X X X X X X X X – X X X X X X X (1) Netsol Memory : S (2) Async SRAM : 6 (3) Functional Mode R : Fast SRAM (9) Mode 1 : CS Low Active 2 : CS1, CS2 - Chip Select Signal 3 : CS1, CS2, CS3 - Chip Select Signal (14)~(15) Speed (tAA) 08 : 8ns09 : 9ns 10 : 10ns12 : 12ns (4) ~ (5) Density 40 : 4M80 : 8M 16 : 16M32 : 32M 64 : 64M (6) ~ (7) Organization 04: x408 : x8 16 : x16 (8) Vcc C : 5.0VV : 3.3V U : 3.0VS : 2.5V (10) Generation M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation (11) “ ㅡ ” (12) Package U : 44TSOP2(LF) S : 54TSOP2(LF) T : 48TSOP2(LF) P : 32TSOP2(LF) Q : 36TSOP2(LF) Y : 48TSOP1(LF) (13) Temp A : Automotive (-40 ℃ ~ +125 ℃ ) I : Industrial (-40 ℃ ~ +85 ℃ ) C : Commercial (0 ℃ ~ +70 ℃ ) (16) Packing “Packing Type Reference” MarkingPacking Type 0 (Number)Tray, Tube TTape & Reel (17)~(18) Special code for customer demand 00 : default * Note (1) ~ (14) : customer ordering code, appears on top of PKG (16) ~ (18) : code for Labeling, appears on label on Box Asynchronous Fast SRAM Packaged Product Code Information

High Quality & High Performance Memory Provider for Net work Sol ution 19/19 Asynchronous Fast SRAM Wafer/Chip Code Information S 6 X X X – X X – X X X X X X X (1) Netsol Memory : S (2) Async SRAM : 6 (3) Functional Mode R : Fast SRAM (7) Mode 1 : CS Low Active 2 : CS1, CS2 - Chip Select Signal 3 : CS1, CS2, CS3 - Chip Select Signal (4) ~ (5) Density 40 : 4M80 : 8M 16 : 16M32 : 32M 64 : 64M (8) Generation M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation (6) “ ㅡ ” (10) Product form W : Wafer C : Chip * Note (1) ~ (11) : customer ordering code (12) ~ (16) : code for Labeling, appears on label on Box (9) “ ㅡ ” (11) Test Level 1 : Hot Temp, DC sort 2 : Hot Temp, DC and selected AC sort 3 : Ho and Cold Temp, DC and selected AC sort (12) Carrier Type 0 : Cassette type 1 : Jar type (13)~(16) Special code for customer demand 0000 : default