Introduction EE1411 Design Rules
EE1412 3D Perspective Polysilicon Aluminum
EE1413 Design Rules Interface between designer and process engineer Guidelines for constructing process masks Unit dimension: Minimum line width scalable design rules: lambda parameter absolute dimensions (micron rules)
EE1414 CMOS Process Layers Layer Polysilicon Metal1 Metal2 Contact To Poly Contact To Diffusion Via Well (p,n) Active Area (n+,p+) ColorRepresentation Yellow Green Red Blue Magenta Black Select (p+,n+) Green
EE1415 Intra-Layer Design Rules Metal2 4 3
EE1416 Transistor Layout
EE1417 Vias and Contacts
EE1418 Select Layer
EE1419 CMOS Inverter Layout
EE14110 Layout Editor
EE14111 Design Rule Checker poly_not_fet to all_diff minimum spacing = 0.14 um.
EE14112 Sticks Diagram 1 3 In Out V DD GND Stick diagram of inverter Dimensionless layout entities Only topology is important Final layout generated by “compaction” program
Introduction EE14113 Packaging
EE14114 Bonding Techniques
EE14115 Package-to-Board Interconnect
EE14116 Package Types