High Electron Mobility Transistor (HEMT)

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Presentation transcript:

High Electron Mobility Transistor (HEMT) Flament Benjamin

PLAN Presentation Fabrication

Presentation 1980 at Fujitsu TEGFET, MODFET, HFET Goal->transportation in a doped material

Presentation Heterojunction: 2 layers Highly doped layer with grand gap Non-doped layer with small gap

Energy band diagram

Transfert des charges Source Gate Drain CAP small doped gap CAP small doped gap Schottky contact grand gap non doped Carrier donor layer grand gap doped Spacer grand gap non doped Canal small gap non doped Buffer grand gap non doped Substrat Transfert des charges

PLAN Presentation Fabrication

Plan Cleaning Deposition, MBE Ohmic contacts

Fabrication Cleaning of the wafer GaAs wafer->more complicated than Si wafer Difficulties to remove the oxide of Ga and As We use the electron cyclotron resonance (ECR)

Fabrication As oxide is removed by heating and : x=1, 3, 5 stands for the various oxides of arsenic Ga oxide is removed by:

Fabrication Becomes volatile at 200°C so we choose a temperature of 400°C

Fabrication We grow the different layer by molecular beam epitaxy (MBE)

30 periods of AlGaAs/GaAs superlattice buffer Buffer grand gap non doped Substrat 30 periods of AlGaAs/GaAs superlattice buffer 30 periods of AlGaAs/GaAs superlattice buffer

120 Å of In(0.2)Ga(0.8)As Canal small gap non doped Buffer grand gap non doped Substrat 120 Å of In(0.2)Ga(0.8)As

35 Å of Al(0.23)Ga(0.77)As Spacer grand gap non doped Canal small gap non doped Buffer grand gap non doped Substrat 35 Å of Al(0.23)Ga(0.77)As

Carrier donor layer grand gap doped Spacer grand gap non doped Canal small gap non doped Buffer grand gap non doped Substrat

250 Å of Al(0.23)Ga(0.77)As Schottky contact grand gap non doped Carrier donor layer grand gap doped Spacer grand gap non doped Canal small gap non doped Buffer grand gap non doped Substrat 250 Å of Al(0.23)Ga(0.77)As

Wafer and others layers Fabrication photoresist Wafer and others layers

Wafer and others layers Fabrication Mask Photoresist Wafer and others layers

Fabrication Mask photoresist

Fabrication metal GaAs photoresist Layers

Source Drain CAP small doped gap Schottky contact grand gap non doped Carrier donor layer grand gap doped Spacer grand gap non doped Canal small gap non doped Buffer grand gap non doped Substrat

Fabrication 3 layers: PPMA(polypropylmethacrylate) PPMA for the bottom layer PMIPK for the middle layer PPMA for the top layer PPMA(polypropylmethacrylate) PMIPK(polymethylisopropenylketone)

Fabrication Using deep UV lithography

Research Lattice matching