By: Joaquin Gabriels November 24 th, 2008.  Overview of CMOS  CMOS Fabrication Process Overview  CMOS Fabrication Process  Problems with Current CMOS.

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Presentation transcript:

By: Joaquin Gabriels November 24 th, 2008

 Overview of CMOS  CMOS Fabrication Process Overview  CMOS Fabrication Process  Problems with Current CMOS Fabrication  Future Changes in CMOS Fabrication

 Complementary metal–oxide–semiconductor ( CMOS )  Has many different uses:  Integrated Circuits  Data converters  Integrated transceivers  Image sensors  Logic circuits en.wikipedia.org/wiki/CMOS

NAND Circuit

lsmwww.epfl.ch/Education/former/ /VLSIDesign/ch02/ch02.html

1. Create a pattern. 2. Oxidize small layer, about 1µm thick. 3. Place photoresist on top of SiO 2 4. Place mask(pattern) above photoresist and expose it to UV light.

1. Etch away SiO 2 using HF acid or plasma. 2. Remove remaining photoresist with acids.

 To create a n well:  Diffusion  Heat wafer in Arsenic gas chamber until diffusion occurs.  Ion Implantation  Arsenic or phosphorous are implanted in window.

 A thin layer of oxide is deposited.  A thin layer of polysilicon is deposited using Chemical Vapor Deposition (CVD).

 Remove oxide layer using acid.  Dope open area using Ion implantation or diffusion.

 Optical lithography is limited by the light frequency.  Material limitations  Yield limitations  Space limitations

 Material changes like using high-k materials.  Design changes  SOI(Silicon On Insulator)  Double Gate (Finfet)  Twin-Tub Process

 CMOS Digital Integrated Circuit Design - Analysis and Design by S.M. Kang and Y. Leblebici   “Introduction to VLSI Circuits and Systems,” John Wiley and Sons, 2002  /VLSIDesign/ch02/ch02.html   users.ece.utexas.edu/~adnan/ vlsi -05/lec0Fab.ppt   _ CMOS _Process_Steps/08_Simple_ CMOS _Fab.ppt   access.ee.ntu.edu.tw/course/VLSI_design_90second/data/Chapter%203%20Part 2% doc