Extrinsic Semiconductors ECE 2204
Definitions Intrinsic ▫Pure ▫There are an equal number of electrons and holes Extrinsic ▫Contains impurities (donors, acceptors, and traps) ▫The material properties are dominated by the concentration of the impurities and their effect on the crystal Usually, n ≠ p
Back to the Periodic Table
Column V Atoms Have 5 outer shell electrons
The extra electron on the phosphorous atom is easily removed and becomes a free electron without generating a hole. The phosphorous atom becomes positively charged (ionized).
Back to the Periodic Table (again)
Column III Atoms Have 3 outer shell electrons Missing outer shell electron when compared to Si
The gallium atom ‘steals’ an electron from a neighboring Si atom to complete the four bonds with the surrounding Si atoms, generating a hole at the neighboring Si atom. The boron atom becomes negatively charged (ionized).
n-type Semiconductors Are doped with donor atoms, which have an extra electron that they donate to the crystal ▫When the concentration of donor atoms is much greater than the intrinsic carrier concentration, the electron concentration is composed of these donated electrons.
p-type Semiconductors Are doped with acceptor atoms, which generate holes in the crystal ▫When the concentration of acceptor atoms is much greater than the intrinsic carrier concentration, the hole concentration is composed of the holes generated by the acceptors.
Minority Carrier Concentrations n-type semiconductor p-type semiconductor
Energy Diagrams EFEF EFEF
Resistivity n-type semiconductorp-type semiconductor
Temperature Effects Unfortunately, the simplification of the equation for resistivity gets rid of its temperature dependence of the resistivity. Why? ▫(Always blame the intrinsic carrier concentration for temperature effects – it is usually the cause.)