Status of Hamamatsu Silicon Sensors K. Hara (Univ of Tsukuba) Delivery leakage current at 150V & 350V number of defect channels wafer thickness & full.

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Presentation transcript:

Status of Hamamatsu Silicon Sensors K. Hara (Univ of Tsukuba) Delivery leakage current at 150V & 350V number of defect channels wafer thickness & full depletion voltage bias resistance (sampling) Status of Institute tests implant tests Coupling capacitors 24-hr leakage current stability June 2001

Summary of Institution tests (status)

Delivery ~100/month so far Production sensors with modified mask from March We aim at ~300/month. 1093

Leakage current 350V)

defects all defects pinhole is responsible …

wafer thickness full depletion voltage 50~90V mean=289um spec:285±15 recent delivery

November 2000 December 2000 HPK I-V curves

IV curves Detectors with new mask

Bias resistance, sampling 2/lot

Implant tests: sampling (2/lot)

Coupling capacitors Measure nly detectors with many defects …

24hr I stability

Semi-auto prober