PAUL SCHERRER INSTITUT M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder Cryogenic Detectors Development at PSI.

Slides:

Advertisements

Similar presentations

Chapter 9. PN-junction diodes: Applications

Advertisements

Hyperspectral fluorescence Imaging: the potential of cryogenic detectors David Ray Chief Technology Officer BioAstral Limited.

CMOS Fabrication EMT 251.

Simplified Example of a LOCOS Fabrication Process

Recent progress with TES microcalorimeters and signal multiplexing J. Ullom NIST NASA GSFC SRON J. Beall R. Doriese W. Duncan L. Ferreira G. Hilton R.

X-ray Astronomy Lee Yacobi Selected Topics in Astrophysics July 9.

Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: Ω-cm Thickness: µm.

Astro-E2 and Japanese future space programs for high energy astrophysics Astro-E2 NeXT XEUS Small satellite programs Tadayasu Dotani (ISAS)

Single Photon Counting Detectors for Submillimeter Astrophysics: Concept and Electrical Characterization John Teufel Department of Physics Yale University.

Richard M. Bionta XTOD July 19-21, 2005 UCRL-PRES-xxxxxx X Ray Diagnostics LCLS FAC Meeting Oct. 27, 2005.

Week 10a – Introduction to Semiconductors and Diodes

Pattern transfer by etching or lift-off processes

X-Ray Spectroscopy. 1 eV 100 eV 10 eV Energy (keV) The need for high resolution X-ray spectroscopy Astrophysical Plasmas: Simulation of the emission from.

Antireflex coatings Antireflex coating INESC: 150, 400Å TiWN 2 Resist was exposed both to the light source and to reflected beams from resist/sample.

June X-Ray Spectroscopy with Microcalorimeters1 X-Ray Spectrometry with Microcalorimeters.

1 Anomaly in fabrication processes for large-scale array detectors of superconducting tunnel junctions M. Ukibe, Y. Chen, Y. Shimizugawa, Y. Kobayashi,

1 Microfabrication Technologies Luiz Otávio Saraiva Ferreira LNLS

YoHan Kim  Thin Film  Layer of material ranging from fractions of nanometer to several micro meters in thickness  Thin Film Process 

Device Fabrication Example

MSE-630 Gallium Arsenide Semiconductors. MSE-630 Overview Compound Semiconductor Materials Interest in GaAs Physical Properties Processing Methods Applications.

EE141 © Digital Integrated Circuits 2nd Manufacturing 1 Manufacturing Process I Dr. Shiyan Hu Office: EERC 518 Adapted and modified from Digital Integrated.

1 ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 18: Introduction to MEMS Dr. Li Shi Department of Mechanical Engineering.

Low Temperature X-ray Detectors Caroline K. Stahle NASA / Goddard Space Flight Center.

Fabrication of Active Matrix (STEM) Detectors

Development of Low Temperature Detector S.C. Kim (SNU, DMRC)

Silicon  -Calorimeters at Saclay Main Architecture: All-Si STANDARD Technologies including collective approach for large (1024 pixels) buttable X-rays.

1. A clean single crystal silicon (Si) wafer which is doped n-type (ColumnV elements of the periodic table). MOS devices are typically fabricated on a,

Space Research Centre Silicon Carbide X-Ray detectors for Planetary Exploration Dr. John E. Lees University of Leicester 8 th International Conference.

T. Frank for the CRESST collaboration Laboratori Nazionali del Gran Sasso C. Bucci Max-Planck-Institut für Physik M. Altmann, M. Bruckmayer, C. Cozzini,

MANU2: status report Maria Ribeiro Gomes* for the Genoa Group IAP, 14-Nov-05 * pos-doc under TRN HPRN-CT

Recent Progress in Silicon Microcalorimeters and Their Prospects for NeXT (and other missions) Caroline A. Kilbourne NASA Goddard Space Flight Center.

SILICON DETECTORS PART I Characteristics on semiconductors.

10/09/2002 P. Roy G. Pellegrini, A. Al-Ajili, L. Haddad, J. Melone, V. O'Shea, K.M. Smith, V. Wright, M. Rahman Patrick Roy Study of irradiated 3D detectors.

Instrumental Development in Japan for Future Missions 1.Si strip detectors(GLAST) 2.Supermirror technology 3.New hard-X/  detectors 4.TES calorimeters.

Development of an Antenna-coupled Al Superconducting Tunnel Junction for a detection of cosmic microwave background B-mode polarization H. Ishino 4, M.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.

IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.

Min Kyu Lee ( 이민규 ) Kyoung Beom Lee ( 이경범 ) Yong-Hamb Kim ( 김용함 ) Low Temperature Detectors 2006 Workshop on the Underground Experiment at Yangyang TEXONO-KIMS.

Cryogenic Detectors and Test Infrastructure at the University of Leicester G.W. Fraser Space Research Centre, Michael Atiyah Building, Department of Physics.

ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.

Substitute beer and pizza?. Basic Silicon Solar Cell as fabricated in Cameron With Schematic.

Title Light Detectors. Characteristics  Sensitivity  Accuracy  Spectral Relative Response(R( ))  Absolute Sensitivity(S( ))  Signal-to-noise ratio.

Page 1 Science Payload and Advanced Concepts Office STJs as Photon Detectors.

XEUS Cryogenic Instrument October 2004 Cryogenic X-ray sensor development in US, Europe and Japan Micro-calorimeters Doped - thermistors Astro-E2.

Metallic Magnetic Calorimeters for High-Resolution X-ray Spectroscopy D. Hengstler, C. Pies, S. Schäfer, S. Kempf, M. Krantz, L. Gamer, J. Geist, A. Pabinger,

Yong-Hamb Kim Low Temperature Detectors for Rare Event Search 2 nd Korea-China Joint Seminar on Dark Matter Search.

Peterson xBSM Optics, Beam Size Calibration1 xBSM Beam Size Calibration Dan Peterson CesrTA general meeting introduction to the optics.

General detectors. CCDs Charge Coupled Devices invented in the 1970s Sensitive to light from optical to X-rays In practice, best use in optical and X-rays.

MARE Microcalorimeter Arrays for a Rhenium Experiment A DETECTOR OVERVIEW Andrea Giuliani, University of Insubria, Como, and INFN Milano on behalf of the.

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

Electrical properties of background-limited membrane- isolation TESs for far-IR/subMM spectroscopy M. Kenyon, P. K. Day, C. M Bradford, J. J. Bock, & H.

Wet etching Isotropic etching Aim Selective removal of material by chemical reaction between etchant and material Why? Remove material.

STATUS OF R&D AT UCSB Paul Szypryt Mazin Lab August 26, 2013.

Thermal Kinetic Inductance Detectors for x-rays Orlando Quaranta Thomas Cecil Lisa Gades Antonino Miceli Advanced Photon Source.

Yong-Hamb Kim Development of cryogenic CaMoO 4 detector 2nd International Workshop on double beta decay search Oct. 7~ Oct. 8, 2010.

Low Temperature Detector Design for the particle search Kim Seung Cheon (DMRC,SNU)

CMOS Fabrication EMT 251.

MIT Amorphous Materials 11: Amorphous Silicon Macroelectronics

Cryogenic Particle Detectors in Rare event Searches

CMOS Fabrication CMOS transistors are fabricated on silicon wafer

Manufacturing Process I

Exploring the limits of hybrid pixel detectors with MÖNCH

Fab. Example: Piezoelectric Force Sensor (1)

Upgrade of LXe gamma-ray detector in MEG experiment

Silicon Wafer cm (5’’- 8’’) mm

Manufacturing Process I

Layer Transfer Using Plasma Processing for SMART-Wafer

Pt-DSE Test Results Testing conducted by Kenneth Leedle

Manufacturing Process I

The Image The pixels in the image The mask The resulting image 255 X

Presentation transcript:

PAUL SCHERRER INSTITUT M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder Cryogenic Detectors Development at PSI

PAUL SCHERRER INSTITUT PSI Cryo-detector Work SIS STJ Ta-STJ, Single pixel and strips Mn- X-Ray, Optical Caloriemeter MoAu TES, Mn-X-ray SIN STJ

PAUL SCHERRER INSTITUT Si Si-nitride Mo/Au PAUL SCHERRER INSTITUT Mo/Au Microcalorimeter Mo/Au-TES Au Absorber Si-nitride membrane, “bad” thermal link Thesis J. Olsen.

PAUL SCHERRER INSTITUT Ta-Al/AlOx/Al-Ta-Nb produced by E. Kirk Basic tunneling junction

PAUL SCHERRER INSTITUT STJ Detector fabrication in cross section Photoresist etch mask, dry and wet etching to pattern strips … … and detectors Lift-off mask for SiO2 … … and wiring

PAUL SCHERRER INSTITUT I-V characteristics

PAUL SCHERRER INSTITUT Response to red LED

PAUL SCHERRER INSTITUT

VUV spectrometer eV Ta-STJ 20’ mK IR rejection !

PAUL SCHERRER INSTITUT imaging with diffusion

PAUL SCHERRER INSTITUT energy position 5.9 keV 6.4 keV Substrate Phonons

PAUL SCHERRER INSTITUT STJ, 500 mK calorimeter, 100 mK Si, 300 K Summary Mn-X-ray results at PSI

PAUL SCHERRER INSTITUT Kurakados 40series x 20paralle STJ’s, each 50  m Diameter

PAUL SCHERRER INSTITUT Future plans at PSI Close SIS-STJ work in 2005 Thesis I. Jerjen: Sensitivity of Ta-STJ to optical light Measure 10-50eV photons Collaboration with Kurakado on series-STJ fabrication and testing SIN Junction studies + S being Absorber, small gap + N being Si (degenerated doped). ++ Profit from Si technology + No magnetic fields - no backtunneling - low temperature (<100mK)