Applique Status May18, 2015

Recent Highlight: Enhanced Devices Using Flexible Co-Extruded Layered Appliqués Structured appliqués to enhance the interaction of light with photonic devices increased interaction time due to group velocity delay localization/enhancement of electromagnetic field at the device surface. Applications include spectral enhancements to  mirror/absorbing surfaces  Blue/UV photodiodes Photodiode appliqués Mirror reflection effects with 32-layer appliqué

Appliqués Spectral enhancement of absorption at a lossy smooth surface using removable appliqu é s Theory Experiment

Application-UV or blue enhanced photodiode

Effect of air gap between appliqué and SiO 2 with higher bilayer index down (PS) Reflectivity Theory Plots 25 nm gap 50 nm gap 100 nm gap 150 nm gap

Effect of air gap between appliqué and SiO 2 with lower bilayer index down (PMMA) Reflectivity Theory Plots 25 nm gap 50 nm gap 100 nm gap 150 nm gap

Measurements on Si wafer with PVDF-PMMA/PS 32 layer film

Reflectance measurements on Si wafer with PVDF-PMMA/PS 32 layer film Need to recheck sides

Another example

Photodiode performance-angle dependence

E x p e ri m e n t

Issues relating to the depth of the active p-n junction of the photodiode

The dip appears in the band when the high index side is against the mirror, but the dip location is not the same as the defect location for the folded system. See next slide Mirror

PMMA against the mirror (at right edge) PS against the mirror (at right edge) In both cases, I think you would want the dye in the layer that is NOT against the mirror. But it is not obvious whether the dye should be in the low index (long wavelength band edge lasing) or in the high index (band defect lasing) material? Mirror