Parametric Instability of Mobile Elastic Gate in Tera- and Nano- High Electron Mobility Transistor V.L. Semenenko, V.G. Leiman, A.V. Arsenin, A.D. Gladun and V.I Ryzhii

Outline Introduction Modulated THz radiation detector Reduction the model to the capacitance transducer equations Calculation for the threshold signal amplitude and power

Motivation Expected roadmap for some THz applications, 2007*) * Masayoshi Tonouchi, “Cutting-edge terahertz technology”, Nature Photonics 1, (2007) Modulated THz radiation detectors are required

The first resonant gate transistor H. C. Nathanson, W. E. Newell, R. A. Wickstorm, and J. R. Davis, IEEE Trans. Electron Devices 14, 117, 1967.

Recent modulated THz detectors V. Ryzhii, M. Ryzhii, Y. Hu, et al., Appl. Phys. Lett. 90, (2007). V. G. Leiman, et al., J. Appl. Phys. 104, (2008).

Parametric instability in capacitance transducer Dimensionless equations

Calculations for threshold Λ

Device scheme & model Front viewTop view Gate charge field component Hydrodynamic model of electron transport in 2DEG

Solution of the linearized equations Because of the linear equations Characteristic frequency & quality factor of the 2DEG oscillations

Power consumption & linear force acting on the gate

Equivalent system of ODEs … As it would be if the device was the following:

Fitting the parameters C & D

Dimensionless equations system

Results & conclusion * Huttel A.K. et al // Nano Lett., Vol. 9, No. 7, P. 2547, ** Arsenin A.V. et al // J. of Comm. Tech. and Electronics,Vol. 54, No. 11, P. 1319, According to our previous work**), in the case of plain metallic cantilever gate: can be 2-3 orders lower in the case of SWCNT gate

Thank you very much for your attention!

Calculation for the values Θ res & Ψ res