EE130/230A Discussion 3 Peng Zheng.

Slides:

Advertisements

Similar presentations

EE130/230A Discussion 2 Peng Zheng.

Advertisements

Semiconductor Device Physics

Lecture #5 OUTLINE Intrinsic Fermi level Determination of E F Degenerately doped semiconductor Carrier properties Carrier drift Read: Sections 2.5, 3.1.

Semiconductor Device Physics Lecture 3 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.

Semiconductor Device Physics

ECE 4339: Physical Principles of Solid State Devices

Lecture #6 OUTLINE Carrier scattering mechanisms Drift current

Doped Semiconductors Group IVA semiconductors can be “doped” by adding small amounts of impurities with more or fewer than 4 valence electrons. e.g. add.

Lecture 2 OUTLINE Semiconductor Basics Reading: Chapter 2.

EE105 Fall 2007Lecture 1, Slide 1 Lecture 1 OUTLINE Basic Semiconductor Physics – Semiconductors – Intrinsic (undoped) silicon – Doping – Carrier concentrations.

Announcements HW1 is posted, due Tuesday 9/4

Normalized plot of n 0 /N D as a function of temperature. This plot is for N D = cm  3. Figure

Lecture #8 OUTLINE Generation and recombination Excess carrier concentrations Minority carrier lifetime Read: Section 3.3.

Lecture #3 OUTLINE Band gap energy Density of states Doping Read: Chapter 2 (Section 2.3)

EE105 Fall 2011Lecture 3, Slide 1Prof. Salahuddin, UC Berkeley Lecture 3 OUTLINE Semiconductor Basics (cont’d) – Carrier drift and diffusion PN Junction.

Lecture 2 OUTLINE Semiconductor Fundamentals (cont’d) – Energy band model – Band gap energy – Density of states – Doping Reading: Pierret , 3.1.5;

Lecture 3. Intrinsic Semiconductor When a bond breaks, an electron and a hole are produced: n 0 = p 0 (electron & hole concentration) Also:n 0 p 0 = n.

Lecture 2 OUTLINE Important quantities Semiconductor Fundamentals (cont’d) – Energy band model – Band gap energy – Density of states – Doping Reading:

Semiconductor Devices 22

Lecture 25: Semiconductors

Drift and Diffusion Current

Potential vs. Kinetic Energy

EE130/230A Discussion 7 Peng Zheng.

Semiconductor Equilibrium

NEEP 541 Ionization in Semiconductors - II Fall 2002 Jake Blanchard.

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)

Chapter Intrinsic: -- case for pure Si -- # electrons = # holes (n = p) Extrinsic: -- electrical behavior is determined by presence of impurities.

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 9 Temperature Dependence of Carrier Concentrations L7 and L8: how to get electron.

Carrier Transport Phenomena And Measurement Chapter 5 26 February 2014

Lecture 9 OUTLINE pn Junction Diodes – Electrostatics (step junction) Reading: Pierret 5; Hu

Lecture 3 OUTLINE Semiconductor Fundamentals (cont’d) – Thermal equilibrium – Fermi-Dirac distribution Boltzmann approximation – Relationship between E.

EE130/230A Discussion 6 Peng Zheng.

Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.

 P-N Junction Diodes  How do they work? (postponing the math) Chap. 5.2.

Electron and Hole Concentrations in Extrinsic Semiconductor

Introduction to Semiconductor Technology. Outline 3 Energy Bands and Charge Carriers in Semiconductors.

3/27/2015PHY 752 Spring Lecture 251 PHY 752 Solid State Physics 11-11:50 AM MWF Olin 107 Plan for Lecture 25:  Chap. 18 & 19 in Marder  Impurity.

NEEP 541 Ionization in Semiconductors Fall 2002 Jake Blanchard.

By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -04 PN Junction.

Notes 27 February 2013.

Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Semiconductor Device Physics

1 ME 381R Lecture 13: Semiconductors Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX

Slide 1EE40 Fall 2007Prof. Chang-Hasnain EE40 Lecture 32 Prof. Chang-Hasnain 11/21/07 Reading: Supplementary Reader.

President UniversityErwin SitompulSDP 3/1 Dr.-Ing. Erwin Sitompul President University Lecture 3 Semiconductor Device Physics

Carrier generation and recombination A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation.

EE130/230A Discussion 10 Peng Zheng.

PHYSICAL ELECTRONICS ECX 5239 PRESENTATION 01 PRESENTATION 01 Name : A.T.U.N Senevirathna. Reg, No : Center : Kandy.

Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d) – Carrier diffusion Diffusion current Einstein relationship – Generation and recombination Excess.

Lecture 3 OUTLINE Semiconductor Fundamentals (cont’d)

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)

Lecture 3 OUTLINE Semiconductor Fundamentals (cont’d)

Lecture 2 OUTLINE Important quantities

Announcements HW1 is posted, due Tuesday 9/4

Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)

Lecture #5 OUTLINE Intrinsic Fermi level Determination of EF

Lecture #8 OUTLINE Generation and recombination

Lecture #6 OUTLINE Carrier scattering mechanisms Drift current

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)

Lecture 2 OUTLINE Semiconductor Fundamentals (cont’d)

EE130/230A Discussion 1 Peng Zheng.

Semiconductor Device Physics

Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)

EE130/230A Discussion 5 Peng Zheng.

EE130/230A Discussion 8 Peng Zheng.

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

Lecture 12 OUTLINE pn Junction Diodes (cont’d)

EE105 Fall 2007Lecture 1, Slide 1 Lecture 1 OUTLINE Basic Semiconductor Physics – Semiconductors – Intrinsic (undoped) silicon – Doping – Carrier concentrations.

Lecture 12 OUTLINE pn Junction Diodes (cont’d)

PHY 752 Solid State Physics Inhomogeneous semiconductors

Presentation transcript:

EE130/230A Discussion 3 Peng Zheng

Conductivity of a Semiconductor n  [qtmn / mn*] is the electron mobility p  [qtmp / mp*] is the hole mobility tmn ≡ average time between electron scattering events tmp ≡ average time between hole scattering events EE130/230A Fall 2013

Mobility Dependence on Doping Carrier mobilities in Si at 300K EE130/230A Fall 2013 Lecture 4, Slide 3

Mobility Dependence on Temperature EE130/230A Fall 2013 Lecture 4, Slide 4

Resistivity Dependence on Doping R.F. Pierret, Semiconductor Fundamentals, Figure 3.8 For n-type material: For p-type material: Note: This plot (for Si) does not apply to compensated material (doped with both acceptors and donors). EE130/230A Fall 2013 Lecture 4, Slide 5

Recombination-Generation (R-G) of Carriers in Silicon EE130/230A Fall 2013

Recombination Processes R.F. Pierret, Semiconductor Fundamentals, Figure 3.15 Direct R-G Center Auger Recombination in Si is primarily via R-G centers EE130/230A Fall 2013 Lecture 5, Slide 7

Net Recombination Rate (General Case) For arbitrary injection levels, the net rate of carrier recombination is: EE130/230A Fall 2013 Lecture 5, Slide 8

Electrostatics (Step PN Junction) Band diagram: Electrostatic potential: Electric field:

electrostatic potential V(x) electric field ɛ(x) x potential energy PE(x) x kinetic energy KE(x) x Carrier concentration x Electron drift-current density and the electron diffusion-current density x