Notes on Transistor Sizing for equal pullup/pulldown We assume that electron mobility to hole mobility ratio is 2 in this class. This means that a minimum.

Slides:

Advertisements

Similar presentations

Logical Functions Circuits using NMOS and PMOS enhancement mode FETs.

Advertisements

EE 447 VLSI Design Lecture 7: Combinational Circuits

Introduction to CMOS VLSI Design Combinational Circuits

Digital Integrated Circuits© Prentice Hall 1995 Combinational Logic COMBINATIONAL LOGIC.

Digital CMOS Logic Circuits

ECE 424 – Introduction to VLSI

Physical structure of a n-channel device:

DIFFERENTIAL AMPLIFIERS. DIFFERENTIAL AMPLIFIER 1.VERY HIGH INPUT IMPEDENCE 2.VERY HIGH BANDWIDTH 3.DIFFERENTIAL INPUT 4.DC DIFFERENTIAL INPUT ACCEPTED.

ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc. Lecture 28 Field-Effect Transistors.

DC Response DC Response: Vout vs. Vin for a gate Ex: Inverter

Lecture 5: DC & Transient Response

Lecture 9: Combinational Circuit Design. CMOS VLSI DesignCMOS VLSI Design 4th Ed. 10: Combinational Circuits2 Outline  Bubble Pushing  Compound Gates.

From analog to digital circuits A phenomenological overview Bogdan Roman.

Universal Gates Sum of Products Products of Sum

Introduction to CMOS VLSI Design Combinational Circuits.

Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response

Copyright 2001, Regents of University of California Lecture 18: 04/0703 A.R. Neureuther Version Date 04/03/03 EECS 42 Intro. electronics for CS Spring.

Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response Credits: David Harris Harvey Mudd College (Material taken/adapted from Harris’ lecture.

EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

Lecture #24 Gates to circuits

Design and Implementation of VLSI Systems (EN0160) Sherief Reda Division of Engineering, Brown University Spring 2007.

Physical States for Bits. Black Box Representations.

Outline Noise Margins Transient Analysis Delay Estimation

DC and transient responses Lezione 3

S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Lecture10: Delay Estimation Prof. Sherief Reda Division of Engineering, Brown University.

CS 140L Lecture 1 Professor CK Cheng 3/31/02. CMOS Logic (3.2 – 3.6) Complementary Metal-Oxide Semiconductor.

CMOS VLSI Design4: DC and Transient ResponseSlide 1 EE466: VLSI Design Lecture 05: DC and transient response – CMOS Inverters.

EE4800 CMOS Digital IC Design & Analysis

Complex CMOS Logic Gates

EE 447 VLSI Design 4: DC and Transient Response1 VLSI Design DC & Transient Response.

S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Lecture 17: Static Combinational Circuit Design (1/2) Prof. Sherief Reda Division.

Digital Integrated Circuits© Prentice Hall 1995 Combinational Logic COMBINATIONAL LOGIC.

1 Final Exam Review. 2 word7 is high if A2 A1 A0 = 111 word0 is high if A2 A1 A0 = 000 logical effort of each input is (1+3.5)/3 per wordline output.

Lecture 21, Slide 1EECS40, Fall 2004Prof. White Lecture #21 OUTLINE –Sequential logic circuits –Fan-out –Propagation delay –CMOS power consumption Reading:

MOS Inverter: Static Characteristics

Metal-Oxide-Semiconductor Field Effect Transistors

Types of MOSFETs ECE 2204.

1 Delay Estimation Most digital designs have multiple data paths some of which are not critical. The critical path is defined as the path the offers the.

Qualitative Discussion of MOS Transistors. Big Picture ES230 – Diodes – BJT – Op-Amps ES330 – Applications of Op-Amps – CMOS Analog applications Digital.

Logical Effort and Transistor Sizing Digital designs are usually expected to operate at high frequencies, thus designers often have to choose the fastest.

ELECTRICA L ENGINEERING Principles and Applications SECOND EDITION ALLAN R. HAMBLEY ©2002 Prentice-Hall, Inc. Chapter 12 Field-Effect Transistors Chapter.

Physical States for Bits. Black Box Representations.

ECE442: Digital ElectronicsSpring 2008, CSUN, Zahid Static CMOS Logic ECE442: Digital Electronics.

Linear Delay Model In general the propagation delay of a gate can be written as: d = f + p –p is the delay due to intrinsic capacitance. –f is the effort.

Introduction to CMOS VLSI Design MOS devices: static and dynamic behavior.

Introduction to MOS Transistors Section Selected Figures in Chapter 15.

EE141 © Digital Integrated Circuits 2nd Devices 1 Goal of this lecture  Present understanding of device operation  nMOS/pMOS as switches  How to design.

MOSFET Placing an insulating layer between the gate and the channel allows for a wider range of control (gate) voltages and further decreases the gate.

Digital Integrated Circuits A Design Perspective

Introduction to MOS Transistors Section Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model.

Terminal Impedances Eq Eq Eq

Introduction to VLSI Design© Steven P. Levitan 1998 Introduction Properties of Complementary CMOS Gates.

Static CMOS Logic Seating chart updates

Chapter 6 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. High-Speed CMOS Logic Design.

CMOS Logic Gates. NMOS transistor acts as a switch 2 When gate voltage is 0 V No channel is formed current does not flow easily “open switch” When gate.

EE415 VLSI Design. Read 4.1, 4.2 COMBINATIONAL LOGIC.

Modern VLSI Design 3e: Chapter 4 Copyright  1998, 2002 Prentice Hall PTR Topics n Transistor sizing: –Spice analysis. –Logical effort.

1 Timing Closure and the constant delay paradigm Problem: (timing closure problem) It has been difficult to get a circuit that meets delay requirements.

Circuit Delay Performance Estimation Most digital designs have multiple signal paths and the slowest one of these paths is called the critical path Timing.

Introduction to CMOS VLSI Design CMOS Transistor Theory

Digital Block Design & Layout Logic gate (3INPUT NAND GATE) 구자연.

Chapter 12 : Field – Effect Transistors

Topics Circuit design for FPGAs: Logic elements. Interconnect.

Logical Effort Basics from Bart Zeydel.

RC Modeling and Logical Effort Basics

Day 17: October 9, 2013 Performance: Gates

Day 15: October 13, 2010 Performance: Gates

Series and Parallel Circuits

Series and Parallel Circuit

Presentation transcript:

Notes on Transistor Sizing for equal pullup/pulldown We assume that electron mobility to hole mobility ratio is 2 in this class. This means that a minimum sized PMOS has an effective resistance twice that of a minimum sized NMOS. Resistance inversely proportional to width Make PMOS transistor width twice that of NMOS to get same channel resistance

Sizing: 4-input NOR

Sizing: 3-input NAND

Sizing Example: Complex Gate Each individual path to Vdd/GND is considered separately. Want the effective resistances of the transistors along the path to sum to R; need to determine width (k) for each transistor.

Sizing Example: Complex Gate, Solution 1

Sizing Example: Complex Gate, Solution 2 Previous solution is slightly better as it has less total gate width and loading on three of four inputs is smaller.