Nanoscale imaging and control of resistance switching in VO 2 at room temperature Jeehoon Kim, Changhyun Ko, Alex Frenzel, Shriram Ramanathan, and Jennifer.

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Presentation transcript:

Nanoscale imaging and control of resistance switching in VO 2 at room temperature Jeehoon Kim, Changhyun Ko, Alex Frenzel, Shriram Ramanathan, and Jennifer E. Hoffman APPLIED PHYSICS LETTERS 96, (2010) Tanaka lab. Kotaro Sakai

Contents ・ Introduction Strongly correlated electron system The characteristics of VO 2 Domain structure in VO 2 ・ Experiment Methods Result & Discussion ・ Summary ・ Future work

Band Width : wideBand Width : narrow Partial occupation ⇒ Metal Partial occupation ⇒ but Insulator Coulomb's repulsion U Strongly correlated electron system Stimulation Temperature Electric field Magnetic field Light

High-T: metal Low-T: insulator Science 318, 1750 (2007) The characteristics of VO 2

Domain configuration 10nm [001] [110] VO 2 TiO 2 VO 2 crack

・ Transmittance ・ Work function Appl. Phys. Lett. 101, (2012) InsulatorMetal + InsulatorMetal ・ Seebeck coefficient Nano Lett. 9, 4001(2009) ・ Carrier density Phys. Rev. B 79, (2009) Appl. Phys. Lett. 102, (2013) The characteristics of VO 2

Nature Nanotech. 7, 723 (2012) Domain boundary

n=4 ・ Step resistivity changes in 200nm VO 2 wire on Al 2 O 3 (0001) 50nm Domain size ＝ 50nm ～ Appl. Phys. Lett. 104, (2014) Nano domain in VO 2

・ VO 2 Thickness : 200 nm Rms roughtness : ～ 6 nm ・ Si substrate (As-doped) Resistivity : Ωcm Sample details

Measurement system grain on Al 2 O 3 or Si （ Volmer-Weber growth mode) VO 2 n-type Si I

Transition by applied voltage VO 2 n-type Si I VO 2 n-type Si I ・ They succeeded to demonstrate a threshold switching by Joule heating. P=100μW

500nm Domain mapping I ・ The insulating state displays variations in conductivity up to 100%. ・ Conductivity appears lower in the grain boundary. Current (μA)

500nm Domain mapping ・ The metallic state nucleates at the grain with largest insulating-state conductivity

Domain mapping Current (μA) ・ Lower conductivity grain boundaries remain apparent as well as the insulating phase.

Summary ・ They demonstrated a threshold switching by using metal-insulator transition in a single domain of VO 2. ・ This transition results most directly from Joule heating. ・ Conductivity appears lower in the grain boundaries due to a different stoichiometric phase.

Future work 10nm [001] [110] VO 2 TiO 2 VO 2 crack ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ on TiO 2 （ Frank van der Merwe growth mode) grain on Al 2 O 3 or Si （ Volmer-Weber growth mode) No crack & grain boundary

Future work Nb-dope TiO 2 A cantilever coated with Pt or Rh I Sample stage (Cu) Science 318, 1750 (2007)

Future work Insulator Metal Pt coated tip TiO 2 substrate Pt I L 500nm VO 2 nano-wire Pt 300μm 20μm AFM image Pt VO 2 nanowire 50nm

crystalVO 2 TiO 2 Al 2 O 3 Lattice constant (nm) Lattice mismatch(%) Lattice mismatch

Temperature[K] Resistance[Ω] VO 2 -VO 2 VO 2 -TiO 2 (Nb dope) z ・・・・ VO 2 Nb-dope TiO 2 substrate R-T curve on Nb doped TiO2