By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -13 Light Emitting Diode & Tunnel Diode.

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Presentation transcript:

By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -13 Light Emitting Diode & Tunnel Diode

LED Operating Principle When the device is forward-biased, electrons cross the pn-junction from the n-type material and recombine with the holes in the p-type material. When the recombination takes place, the recombining electrons release energy in the form of heat and light. This process is known as “electroluminescence”.

LED

LED Symbol

Various impurities are added during the doping process to establish the wavelength of the emitted light (i.e the color of light). LED Semiconductor Material – Gallium Arsenide (GaAs)(emit infrared radiation) – Gallium Arsenide Phosphate (GaAsP) (red or yellow light) – Gallium Phosphate (GaP)(red or green light)

LED Biasing The forward voltage across an LED is considerably greater than for a silicon diode (typically the maximum V f for LED is between 1.2V and 3.2V). Reverse breakdown for an LED is much less than for a silicon rectifier diode (3V to 10V).

Light Output The LED emits light in response to a sufficient forward current. The amount of power output translated into light is directly proportional to the forward current.

Application Seven-Segment Display – Combinations of the segments form the ten decimal digits. – Each segment in the display is an LED. – By forward-biasing selected combinations of segments any decimal digit and decimal point can be formed.

Tunnel Diode

It shows a special characteristic known as negative resistance. It is constructed with germanium or gallium arsenide by doping the p and n regions much more heavily than in a conventional rectifier diode. This heavy doping results in an extremely narrow depletion region. The heavy doping allows conduction for all reverse voltages so there is no breakdown effect as with the conventional rectifier diode.

Tunnel Diode The extremely narrow depletion region permits electrons to “tunnel” through the pn junction at very low forward- bias voltages, and the diode acts as a conductor (point A & B). At point B, the forward voltage begins to develop a barrier, and the current begins to decrease as the forward voltage continues to increase. This is the negative-resistance region; R F = ΔV F / ΔI F At point C, the diode begins to act as a conventional forward-biased diode.