ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapter 15: FET Introduction: The JFET and MESFET.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Charge Couple Devices Charge Couple Devices, or CCDs operate in the charge domain, rather than the current domain, which speeds up their response time.

Chapter 10 Digital CMOS Logic Circuits

Chapter 2 Modern CMOS technology

FET ( Field Effect Transistor)

Physical structure of a n-channel device:

Metal Oxide Semiconductor Field Effect Transistors

Derek Wright Monday, March 7th, 2005

MODULE SYSTEM LOGIC GATE CIRCUIT DQ CMOS Inverter ASIC Full-Custom Semi-Custom Programmable FPGA PLD Cell-Based Gate Arrays General Purpose DRAM & SRAM.

Introduction to Digital Systems By Dr. John Abraham UT-Panam.

From analog to digital circuits A phenomenological overview Bogdan Roman.

Justin Chow Jacob Huang Daniel Soledad ME 4447/6405 Student Lecture.

ECE 4339: Physical Principles of Solid State Devices

Transistors These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the.

Detection Methods Coherent ↔ Incoherent Photon Detection ↔ Bolometric Photon Counting ↔ Integrating.

Digital Integrated Circuits© Prentice Hall 1995 High Speed VERY HIGH PERFORMANCE LOGIC.

Lecture 11: MOS Transistor

Introduction to VLSI Circuits and Systems, NCUT 2007 Chapter 6 Electrical Characteristic of MOSFETs Introduction to VLSI Circuits and Systems 積體電路概論賴秉樑.

Spring 2007EE130 Lecture 35, Slide 1 Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1.

Chapter 5 – Field-Effect Transistors (FETs)

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Chapter 4. MOS Systems Total 3 hours.. The Adventure of Carriers The description must now borrow a picture from the classical books of adventure. To place.

Microelectronics Circuit Analysis and Design Donald A. Neamen

10-7 Metal-Oxide Semiconductor （ MOS ）  Field-Effect Transistor （ FET ） Unipolar transistor Depend on the flow of only one type of carrier JFET, MOS 

1D or 2D array of photosensors can record optical images projected onto it by lens system. Individual photosensor in an imaging array is called pixel.

MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.

CSET 4650 Field Programmable Logic Devices

Metal-Oxide-Semiconductor Field Effect Transistors

Lecture 19 OUTLINE The MOSFET: Structure and operation

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

ECE 431 Digital Circuit Design Chapter 3 MOS Transistor (MOSFET) (slides 2: key Notes) Lecture given by Qiliang Li 1.

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 35 MOS Field-Effect Transistor (MOSFET) The MOSFET is an MOS capacitor with Source/Drain.

Field-Effect Transistor

Chapter III Semiconductor Devices

Chapter 6 Field Effect Transistors 6.1 Transistor Operation 6.2 The Junction FET 6.3 The Metal-Semiconductor FET 6.4 The Metal-Insulator-Semiconductor.

Digital Integrated Circuits© Prentice Hall 1995 Introduction The Devices.

Qualitative Discussion of MOS Transistors. Big Picture ES220 (Electric Circuits) – R, L, C, transformer, op-amp ES230 (Electronics I) – Diodes – BJT –

Device Physics – Transistor Integrated Circuit

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.

What is RAM? Nick Sims.

ECEE 302 Electronic Devices Drexel University ECE Department BMF-Lecture Page -1 Copyright © 2002 Barry Fell 23 September 2002 ECEE 302: Electronic.

1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.

ECE 4339 L. Trombetta Welcome to Solid State Devices ! ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007

Semiconductor Memories.  Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based.

16-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Sixteen MOSFET Digital Circuits.

Modern VLSI Design 4e: Chapter 6 Copyright  2008 Wayne Wolf Topics Memories: –ROM; –SRAM; –DRAM; –Flash. Image sensors. FPGAs. PLAs.

Grace Xing---EE30357 (Semiconductors II: Devices) 1 EE 30357: Semiconductors II: Devices Lecture Note #19 (02/27/09) MOS Field Effect Transistors Grace.

JFETs, MESFETs, and MODFETs

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.

ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

Introduction to MOS Transistors Section Selected Figures in Chapter 15.

SYEN 3330 Digital SystemsJung H. Kim 1 SYEN 3330 Digital Systems Chapter 9 – Part 2.

ECE/CS 352 Digital System Fundamentals© T. Kaminski & C. Kime 1 ECE/CS 352 Digital Systems Fundamentals Spring 2001 Chapter 6 – Part 2 Tom Kaminski & Charles.

MOS Capacitors UoG-UESTC Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.

VLSI Masoumeh Ebrahimi Mismatch of MOS Transistor.

CP 208 Digital Electronics Class Lecture 6 March 4, 2009.

The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.

ECE 333 Linear Electronics

Government Engineering College Bharuch Metal Oxide Semiconductor Field Effect Transistors{MOSFET} Prepared by- RAHISH PATEL PIYUSH KUMAR SINGH

Nonvolatile memories:

MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.

Field-Effect Transistors Based on Chapter 11 of the textbook

Focusing on the big picture.

Device Physics – Transistor Integrated Circuit

Device Physics – Transistor Integrated Circuit

Presentation transcript:

ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapter 15: FET Introduction: The JFET and MESFET Goal: To understand this figure.

ECE 4339 L. Trombetta Before we look at device operation, let’s look at a few examples of FET technology… JFET

ECE 4339 L. Trombetta MOSFET: Metal-Oxide-Semiconductor FET Dynamic Random Access Memory (DRAM) cell: a MOS transistor coupled with a MOS capacitor

ECE 4339 L. Trombetta Charge Coupled Device (CCD). This device is used to get images in many digital cameras. A variation, called CMOS imaging, is used in low-end cameras.

ECE 4339 L. Trombetta Complementary MOS (CMOS) is a low-power, high density digital logic technology. It is the basis of most modern integrated circuits, including high- performance microprocessors

ECE 4339 L. Trombetta Modulation-doped FET (MODFET). These are fabricated from III-V devices for high speed. 2-dimensional electron gas (2-DEG) forms the channel in a low-doped region for high mobility.

ECE 4339 L. Trombetta

V G is the same across the channel, but there is an additional potential, V(y), which is a function of y: V(0) = 0 and V(L) = V D in the figure. Thus the depletion depth is Note that V G is negative and V(y) is positive, so W increases with an increase in either one.

ECE 4339 L. Trombetta