Centrum elektronických a elektrotechnických súčiastok novej generácie CENG !!! Elektrotechnický ústav SAV Katedra experimentálnej fyziky FMFI UK Katedra.

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Centrum elektronických a elektrotechnických súčiastok novej generácie CENG !!! Elektrotechnický ústav SAV Katedra experimentálnej fyziky FMFI UK Katedra fyziky FEI STU

výskum prípravy, vlastností a možností praktického uplatnenia elektronických a elektrotechnických súčiastok a zariadení novej generácie pre oblasť: informačných technológií, energetiky a silnoprúdovej elektrotechniky, senzoriky, automatizácie a meracej techniky. Činnosť Centra je zameraná na:

MOSFET súčiastky s rozmerom v hlbokej sub-mikrometrovej oblasti základný element supravodivého kvantového počítača extrémne citlivé polovodičové súčiastky pre kvantovú informatiku Informačné technológie

Porovnanie materiálov pre hradlo sub-100 nm MOSFET-u. Analýza procesu tunelovania v supravodivých Josephsonových spojoch. Rozpracovanie AFM nanolitografie. Časový rozvrh

K. Frohlich: Materiály pre hradlo sub-100 nm MOSFET-u R. Durný: Vlastnosti tenkých vrstiev MgB 2 pripravených na roznych substrátoch Š. Chromik: Tenké supravodivé vrstvy pre elektroniku M. Grajcar: Návrh variabilnej vazby medzi qubitmi R. Hlubina: Interferenčné javy pri tunelovaní cez dvojpásove izolanty V. Cambel: AFM nanooxidation process – technology for mesoscopic structures < 100 nm Informačné technológie – prednášky

Materiály pre hradlo sub-100 nm MOSFET-u

International Technology Roadmap for Semiconductors, ITRS CMOS technológia: Moorov zákon inovácia hradla MOSFET-u - Náhrada SiO 2 materiálmi s vysokou diel. konštantou - Náhrada poly-Si elektródy kovovou elektródou CMOS Technology: Grand Challenge : Moving Beyond the SiO 2 Era

MOSFET with strained Si channel MOSFET with 10 nm gate (INTEL) Vertical double gate MOSFET MOS FET – basic device of modern electronic

Alternative gate dielectrics International Technology Roadmap for Semiconductors, 2005 Edition

Metal gates International Technology Roadmap for Semiconductors, 2005 Edition

Requirements on high-  materials

High-  materiály pripravované a študované na ElÚ SAV HfO 2, HfSiO 2 Al 2 O 3, Gd 2 O 3, GdScO 3 La 2 O 3, La y SiO x Študované problémy: Podmienky prípravy metódou MOCVD, dielektrická konštanta, tepelná stabilita, kvalita rozhrania oxid/Si, poruchové náboje v oxide, zvodové prúdy, Príprava Al 2 O 3 na AlGaN/GaN, InAlN/(In)GaN

Requirements on metal gates

Metal gates pripravované a študované na ElÚ SAV Ru, TaN, TiN RuO 2, SrRuO 3, LaScO 3 Študované problémy: Podmienky prípravy metódou MOCVD, efektívna výstupná práca, tepelná stabilita, stabilita v redukčnom prostredí (formovací plyn),

Články publikované v rámci CENG-u Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition, E-MRS 2006, invited. Properties of Ru/Hf x Si 1-x O y /Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition, J. of the Electrochemical Soc. 153 (2006) F176. Phase stability of LaSrCoO3 films upon annealing in hydrogen atmosphere. J. Appl. Phys. 100 (2006) Thermal Stability of Ru Gate Electrode on HfSiO Dielectric, Mater. Res. Soc. Symp. Proc. Vol. 917 (2006) 0917-E05-02.

Určenie pásmového diagramu štruktúry Ru/HfSiO x /Si

Determination of the Ru work function using slanted dielectric films

Determination of energy band alignement of MOS structure using XPS XPS: Valence band offsets UPS: work function Energy loss spectrum: band gap Energy band alignement of the electrode/dielectric interface Ru/HfSiO x /Si Ru HfSiO Si

Doktorandské práce v rámci CENG-u Ing. Roman Lupták: Výskum vlastností materiálov pre pokročilé MOS štruktúry Ing. Karol Čičo: Použitie oxidov pre pasiváciu a izoláciu hradla štruktúr HEMT na báze GaN Ing. Milan Ťapajna: Charakterizácia elektrofyzikálnych procesov v Si štruktúrach pre tenkovrstvovú CMOS technológiu R. Stoklas: Štúdium heteroštruktúr HEMT na báze GaN Ing. J. Martaus: Využitie lokálnej anodickej oxidácie v AFM nanolitografii