Brizon Inc

Products: Microelectronic Application CMP Slurry additive CMP cleaning solutions Wafer storage buffer solution Smart Curable Products Flexible Screen Applications LED Applications High Temperature Resistance And low IR emission A pplications

Products for the Semiconductor Industry: BriteClean-0+ : CMP cleaning process BriteClean-1 : CMP cleaning process Improves post process surface cleanliness for particles and surface residues. Improves next layer of deposition Protects both metal and oxide surfaces Improves wafer rinseability BriteClean-ACP : Slurry Additives Stabilize Slurry and Improve CMP efficiency Reduce and/or Eliminate macro- and micro-scratches Improve uniformity of material removal

Background of Briteclean  Innovative Technology  Longer shelf life - over two years  Much easier control processes and environments  Much more efficient for the cleaning process  One process fit more applications  One Process with Briteclean(s) Can Clean all  Alumina  NiFeCo, Cu abrasives  CeO abrasives  Colloidal SiO 2  Et al

Components Non-ionic surfactants Mixed surfactanized metal inhibitors and antioxidant agents Additional metal inhibitors and antioxidant agent Chelating agent Particle removing agent

Hydrophilic Metal inhibitor head Aliphatic Hydrophobic tail Anti-oxidant Hydrophobic Head Ethoxylated Hydrophilic Tail + Briteclean-0+ Briteclean-1 Briteclean-0+:Briteclean-1 = 1:1 In 50X aqueous dilution Briteclean-0+:Briteclean-1 = 1:1 Bulk solution Phase separation

Microelectronic application - CMP Briteclean – 0+Briteclean - 1Briteclean-ACP Pre/Post Cleaning Process YES Slurry Additives YES Storage/Buffer NO YES Application Need to mix with BC-1 or BC-ACP Need to mix with BC-0+ Alone Usage 2% - 5% 1% - 4%

Examples of Application in Real Field FAB  Briteclean-0+ and Briteclean-1 Mixed: Ratio 1:1 in % aqueous media  Slurry applied: in MH837/MH834/MH814 (Cabot)  Pad applied: IC1000 (white pad --- Rodel/(Rohm Haas)) Sub IV (black pad --- Rodel (Rohm Haas))  Tool platforms Applied: 8" Mirra (Applied Materials); 8" Ebara (Ebara); 8" 6DS-SP(Strausbaugh)  Wafer: Cu, Ni/Fe, Low key and Al 2 O 3

Dramatic Yield Improvement Improved within (WIW) wafer uniformity by ~1X Enhanced Cleanliness Improved Surface Roughness (NiFe<1nm) No Additional Processes Needed Flexible conditions Environmental Friendly No corrosive, no high or very low pH

Layer X CMP Performance Comparison

Slurry only Slurry + Brizon products Comparing SEM images of Silicon wafer surface

 Slurry distribution on polishing pads is a critical factor to achieve better WIW uniformity  Adding Brizon products into CMP slurries, the slurry surface extension with IC series CMP pads was modified to a form a uniformed slurry layer across the whole wafer Principle of Slurry Additive for CMP Applications Wafer IC CMP Pad Slurry Feed

Surf-Clean Data For Competitor’s Clean Solution Alumina NiFe Pre-TreatmentPost-Treatment

Surf-Clean Data For Mixed BriteClean Solution Alumina NiFe Pre-TreatmentPost-Treatment

BriteClean mixed Solution AluminaNiFe Con Con Competitor's Cleaning Solution AluminaNiFe Con Con Different Slurry Cleanability BriteClean vs Competitor Particle Count

BriteClean mixed Solution AluminaNiFe Roller1024 Pencil-10-6 Competitor's Cleaning Solution AluminaNiFe Roller Pencil Different Method Cleanability BriteClean vs Competitor Particle Counts

Competitor's Cleaning Solution Initial (Pre-) Post Cleaning (Post- Pre) Alumina Tool Tool NiFe Tool Tool BriteClean Mixture Cleaning Solution Initial (Pre-) Post Cleaning (Post- Pre) Alumina Tool Tool NiFe Tool Tool

Particle Count/Roughness vs Ration of BC-0/BC-1 On NiFe wafer

Principle of Cleaning Process for CMP Applications  SlurryDissolved/Dispersed into Advanced Nonionic Surfactants, Slurry Chemistry  Trace MetalsDispersed into Advanced Nonionic Surfactants  Metal IonsComplex to Chelate in the Cleaning System  Aggressive Corrosive Buffered by the Cleaning Solution High/Low pH

BriteClean Mixture Competitor’s Cleaning Solution Post CMP&Cleaning AFM images (Cu plated wafer)

Roughness is better, surface residues reduced BriteClean Mixture Average Roughness(N=3x3): Rms=0.29nm Competitor’s Cleaning Solution Average Roughness(N=3x3): Rms=0.34nm Post CMP&Cleaning AFM images (Cu plated wafer)

Customer Testing Platform BriteClean vs Competitor's  Full NiFe, Cu and Alumina  Particle Counts were measured by Tencor Surf scan  Various Cleaning Tools were used Including Mirra, SSEC, DNS

pH Changes vs the Ratio of BriteClean-0/BriteClean-1 pH 100% BriteClean-1 100% BriteClean-0 Diluted 50 times in DI H 2 O Recommended Application: Briteclean-0/Briteclean-1 = 1:1 Diluted to 2%-5% times with DI H 2 O

One customer requested application Store the wafer in DI water, but surface materials was etched, both metal and Oxide Designed BriteClean-ACP. Currently being used in customer’s production No etching on surface materials up to 6 hours in DI water No detailed data was provided by customer Wafer Storage Buffer Solution-ACP

Principle of Prevention Processing  Mono-layerPrevents Redeposition of on SurfaceAny Contamination and Prevents Any Oxidation  Hydrophobic/Hydrophilic Balanced of the Mono-layer Improved Rinsability

26 Sensor dimension was designed for different usages. 4-point scheme minimizes contact resistance during probing Sensor Circuit Measurement

Sensitivity Measurement Trend Chart Brit Briteclean productsCompetitor’s products

A Plethora of Materials In Semiconductor Area Oxide, such as Al 2 O 3 Colloidal SiO 2 NiFeCo Cu, Al, W Polymers Ru Si Et al

Stabilize slurry and improve CMP efficiency Improve slurry uniformity across polishing pad Improve WIW uniformity Advantages of BriteClean as Slurry Additive

Advantages of BriteClean  Reduced particle counts Efficient cleaning process  Much improved surface roughness Surface protection  Much easier process Mixture system No need for any process changes

Advantages of BriteClean ACP Stabilizes slurry for more efficient CMP Protects against oxidation on metal wafer Improves next layer of deposition

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