State of the art on epitaxial GaAs detectors

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Presentation transcript:

State of the art on epitaxial GaAs detectors GESEC R&D Inc. Semiconductor Materials Engineering State of the art on epitaxial GaAs detectors G.C. Suna, N. Mañeza, M. Zazouia, A.Al-Ajilib, V.O'Sheab, F.Quaratib, K.M.Smithb, D. Chambellanc, O. Galc, Ph. Pillotc, M. Lenoird, J. P. Montagned, A. Bchetniae, J.C. Bourgoinf a LMDH, Université Pierre et Marie Curie (Paris 6), France b Department of Physics and Astronomy, University of Glasgow,UK. c LIST/DIMRI, CEA , France d Hospital Armand Trousseau, Paris, France. e Lab. de Physique des Matériaux, Faculté des Sciences de Monastir, Tunisie f GESEC R&D, 68 Avenue de la Forêt, 77210 Avon, France This is a Collaborative work among specialists of semiconductor materials, device processing, detector characterization and medical imaging.

Motivation Decrease the dose (more than a factor of 10 compared to scintillator flat panels) in X-ray imaging

Outline Review of X-ray detection with GaAs Development of epi-growth of GaAs Device processing Device electrical characteristics Performance of radiation detectors Limitations of current devices and ways to overcome

History of GaAs radiation detectors (1) Early work with LPE GaAs (by Tavendale group, 1970) Three typical 241Am and 57Co -ray spectra, at 100V bias and 130K, from 1.5mm diameter, 80m thick LPE GaAs surface barrier detectors, (carrier concentration ~ 6 x 1013 cm-3), fabricated on tin-doped substrates.

History of GaAs radiation detectors (2) MBE epi-GaAs (Bertuccio et al., 1996/97) Pulse height spectrum of photons from an 241Am source detected in a 170 x 320m2 , 5 micron thick MBE undoped GaAs diode detector at 15V reverse bias

Progress in the growth of epitaxial GaAs One 4 inch, 550 µm layer Thickness profile of epi-GaAs grown on four inch substrate Source: SI GaAs n+ substrate: n type (<1014 cm-3) SI substrate: p type (<1014 cm-3)

Electronic properties of epitaxial GaAs Photoluminescence mapping SI GaAs Epitaxial GaAs layer CdTe

Technique to fabricate detectors ohmic contact p+ ion implantation (35 nm) GaAs epilayer n+ substrate (Cz GaAs) n+ ion implantation (35 nm)

Current-Voltage characteristic of a small pad diode 2 nA/mm2 at 50 V

Alpha particle pulse height spectra Combined source 241Am(5.5 MeV), 244Cm (5.8 MeV) and 239Pu (5.2 MeV)

Charge collection efficiency Fitted values at 100 V, giving charge collection efficiency of 85%.

Pulse height spectra of monoenergetic X-rays Characteristic K-series X-rays of Ag, Ba and Nb.

Photocurrent versus radiation dose 1mm2 epitaxial GaAs diode detector

Limitation: width of depleted zone Three ways to overcome it: growth conditions electron irradiation use of 3D detectors

1 MeV electron irradiation After irradiation Before irradiation Low defects not enough to compensate free carriers. Irradiation introduces defects increase depleted depth

3D detectors ‘3D’ SI-LEC GaAs pixel detector bonded to DASH-E ROIC This demonstrates that 3D detectors can be made with GaAs, in this case, it is SI GaAs, the uniformity is bad. If you select one good pixel you can get a very good energy resolution.

End