XIS Calibration at Osaka K. Hayashida, K. Torii, M. Namiki, T. Shiroshoji, M. Shoji, S. Kastuda, H. Tsunemi (Osaka University) T. Kohmura (Kougakuin University)

Calibration Item at Osaka Ex<2.2keV Quantumn Efficiency as a function of energy Quantumn Efficiency as a function of energy XANES at O-K, Si-K XANES at O-K, Si-K Ex-PH relation (gain) Ex-PH relation (gain) Ex-FWHM relation (energy resolution) Ex-FWHM relation (energy resolution) Response Profile to Single Energy Incidence Response Profile to Single Energy Incidence

Quantumn Efficiency Measurement Relative Efficiencies of FM-S0,S1,S2,S3, and XIS-EU are measured by irradiating X-rays from the spectrometer to whole the CCD area. Relative Efficiencies of FM-S0,S1,S2,S3, and XIS-EU are measured by irradiating X-rays from the spectrometer to whole the CCD area. Generator beam current is always monitored Generator beam current is always monitored Si Photodiode is sometimes used to measure the 0 th order light. Si Photodiode is sometimes used to measure the 0 th order light. XIS-EU was cross-calibrated to a Gas PC on 2003Dec. XIS-FM are not installed in the chamber with the Gas PC simultaneously. XIS-EU was cross-calibrated to a Gas PC on 2003Dec. XIS-FM are not installed in the chamber with the Gas PC simultaneously. The gas PC was calibrated in 2000, and calibrated again through the slant incident method in 2004 January. The gas PC was calibrated in 2000, and calibrated again through the slant incident method in 2004 January.

Detector Chamber Manson Soft X-ray Generator Hetrick Spectrometer Calibration Facility in Osaka Clean Room

XIS measurement without slit No Gas PC inside the chamber No Gas PC inside the chamber

X-rays to whole the CCD area Dispersion Direction

Slant Incidence Method No need to use other reference counters. / One way to make a reference counter. In the simplest case, in which all the X-rays stop in the detection layer X-rays Dead Lasyer Detection Layer θ d Dead layer thickness is Even if detection layer thickness is finite, we can measure the dead layer thickness by using the ratio of I(0)/I(  ) of various energies. Hayashida et al., 2003, SPIE4851

X-rays Slant Incidence Method: Experiment with HPK FI CCD camera

0.4keV ～ 1keV 1keV ～ 2keV O-Kα W-Mα I(0) I(45) I(0) I(45) Hayashida et al., 2003,SPIE4851 HPK FI-CCD

Energy [keV] I(45)/I(0) Ratio I(45°)/I(0°) SiO2(  m) Si(  m) Depletion Layer (  m) Measured 1.73± ± ±0.39 Design~2~0.4 *) HPK FI CCD used in this experiment was old model. Hayashida et al., 2003,SPIE4851

CCD raw frame data CCD raw frame data Experiment with HPK BI-CCD Energy Low ⇔ High O Kα Fe 55

0°8mm 0°0mm 30°8mm 30°0mm45°0mm 45°8mm O-K 1 st order C-K O-K 2 nd order BI-CCD

X-rays Slant Incident Method: Application to Gas PC We determined to use the Gas PC as the reference counter

Counts PH (ch) 0° 30° 45° Gas PC Spectra for Different Incident Angle

Window (C 3 H 6 ) H 2 O C 3 H 6 [  m] 0.974±0.076 H 2 O [  m] 0.318±0.060 Dead layer [  m] 70.9± ±5.7 Gas Detection Layer Gas dead layer beneath the window is introduced to fit the data. Gas Dead Layer Xray Simple Model cannot reproduce the data points of the Ratio

Simulation of tracks of photoelectrons 1keV 50  m 0.5keV

The transmission of the PC window was also measured in 2000 by on/off method. Two independent methods agree well above 0.6keV Gas dead layer is only measurable with the slant incident method. Model by Slant Incident Model by Window Tranmission Detection Efficiency of PC

XIS-EU and Gas PC cross calibration using slit

X-rays through Slit ( ~1mm) Dispersion Direction

PC (0.525keV) XIS-EU (0.525keV) PC Spectra and CCD Spectra

SiO 2 [  m] 0.57±0.05 Si [  m] 0.30±0.03 BPSG of EU ~200nm cf ~70nm for FM QE of XIS-EU New Structure model is employed. Depletion Layer 65  m is assumed. cf Mark-san reports SiO2~  m Si ~  m

Schedule XIS-EU and PC cross cal XIS-EU and PC cross cal XIS-EU XIS-EU XIS-FMS2 (Noise Problem) XIS-FMS2 (Noise Problem) PC slant incidence method PC slant incidence method XIS-FMS3 XIS-FMS3 XIS-FMS2 again XIS-FMS2 again XIS-EU XIS-EU XIS-FMS0 (Door Open Problem) XIS-FMS0 (Door Open Problem) XIS-FMS1 XIS-FMS1 XIS-FMS0 (TCE card problem) XIS-FMS0 (TCE card problem) TCE card replacement TCE card replacement XIS-FMS0 XIS-FMS0 XIS-FMS1 XIS-FMS1 XIS-EU XIS-EU Grating SA->SX for Si-edge XANES Grating SA->SX for Si-edge XANES XIS-EU （ＳＸ） XIS-EU （ＳＸ） XIS-FMS0 (SX)? XIS-FMS0 (SX)?