MALVINO Electronic PRINCIPLES SIXTH EDITION.

Slides:

Advertisements

Similar presentations

Electronic Devices Eighth Edition Floyd Chapter 8.

Advertisements

FET ( Field Effect Transistor)

Transistors These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the.

JUNCTION FIELD EFFECT TRANSISTOR(JFET)

FET ( Field Effect Transistor)

Field Effect Transistors Circuit Analysis EE314 HP PA8000 Fujitsu Fairchild Clipper C100.

Field Effect Transistor (FET)

Week 9a OUTLINE MOSFET ID vs. VGS characteristic

Electronics Principles & Applications Sixth Edition Chapter 7 More About Small-Signal Amplifiers (student version) ©2003 Glencoe/McGraw-Hill Charles A.

Principles & Applications

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.

FET ( Field Effect Transistor)

ANALOGUE ELECTRONICS I

Lecture on Field Effect Transistor (FET) by:- Uttampreet Singh Lecturer-Electrical Engg. Govt. Polytechnic College, G.T.B.garh, Moga.

Introduction to FET’s Current Controlled vs Voltage Controlled Devices.

Semiconductor Devices III Physics 355. Transistors in CPUs Moore’s Law (1965): the number of components in an integrated circuit will double every year;

09/16/2010© 2010 NTUST Today Course overview and information.

Chapter 17 Electronics Fundamentals Circuits, Devices and Applications - Floyd © Copyright 2007 Prentice-Hall Chapter 17.

© The McGraw-Hill Companies, Inc McGraw-Hill 1 PRINCIPLES AND APPLICATIONS OF ELECTRICAL ENGINEERING THIRD EDITION G I O R G I O R I Z Z O N I 9.

Junction Field Effect Transistor

Field-Effect Transistors

FET ( Field Effect Transistor)

EEE1012 Introduction to Electrical & Electronics Engineering Chapter 7: Field Effect Transistor by Muhazam Mustapha, October 2010.

CHAPTER 7 Junction Field-Effect Transistors. OBJECTIVES Describe and Analyze: JFET theory JFETS vs. Bipolars JFET Characteristics JFET Biasing JFET Circuits.

Principles & Applications

Principles & Applications

المملكة العربية السعودية وزارة التعليم العالي - جامعة أم القرى كلية الهندسة و العمارة الإسلامية قسم الهندسة الكهربائية ELECTRONIC DEVICES K INGDOM.

Field Effect Transistor (FET)

McGraw-Hill © 2008 The McGraw-Hill Companies Inc. All rights reserved. Electronics Principles & Applications Seventh Edition Chapter 7 More About Small-Signal.

© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 5-1 Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

ECE 340 ELECTRONICS I MOS APPLICATIONS AND BIASING.

Electronic Devices Laboratory CE/EE 3110 Low Frequency Characteristics of Junction Field Effect Transistors Low Frequency Characteristics.

Filed Effect Transistor.  In 1945, Shockley had an idea for making a solid state device out of semiconductors.  He reasoned that a strong electrical.

Acknowledged to: Shahrul Ashikin Azmi (PPKSE). Objectives  Explain the operation and characteristics of junction field effect transistors (JFET).  Understand.

Chapter 2 – Transistors – Part 2 Field Effect Transistors (Unipolar Transistors) (Charge carriers: either electrons or holes)

Field-Effect Transistors (FETs)

By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -22 JFET Characteristics & Parameters.

MALVINO Electronic PRINCIPLES SIXTH EDITION.

McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

CHAPTER 6 Field Effect Transistors (FETs)

7-1 McGraw-Hill © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 7 More About Small-Signal.

CHAP3: MOS Field-Effect Transistors (MOSFETs)

ANALOGUE ELECTRONICS CIRCUITS 1

© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 7-1 Electronics Principles & Applications Eighth Edition Chapter 7 More About Small-Signal.

Junction Field Effect Transistor

Field Effect Transistors (2)

1 Other Transistor Topologies 30 March and 1 April 2015 The two gate terminals are tied together to form single gate connection; the source terminal is.

1 DMT 121 – ELECTRONIC DEVICES CHAPTER 5: FIELD-EFFECT TRANSISTOR (FET)

Electronics Principles & Applications Fifth Edition Chapter 7 More About Small-Signal Amplifiers ©1999 Glencoe/McGraw-Hill Charles A. Schuler.

Mobile Communication Lab. ( pknu.ac.kr)

SMALL SIGNAL FET (Field– Effect Transistors) AMPLIFIER 1.Introduction/Basic 2.FET Small-Signal Model 3.Fixed-Bias Configuration 4.Self-Bias Configuration.

CHAPTER 5 FIELD EFFECT TRANSISTORS(part a) (FETs).

Field-effect transistors ( FETs) MD.MASOOD AHMAD ASST.PROF ECE DEPT.

Field Effect Transistors

FET FET’s (Field – Effect Transistors) are much like BJT’s (Bipolar Junction Transistors). Similarities: • Amplifiers • Switching devices • Impedance matching.

ECE 333 Linear Electronics Chapter 7 Transistor Amplifiers How a MOSFET or BJT can be used to make an amplifier  linear amplification  model the linear.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. MALVINO & BATES SEVENTH EDITION Electronic PRINCIPLES.

course Name: Semiconductors

COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 9.

SILVER OAK COLLEGE OF ENGG. & TECHNOLOGY  SUB – Electronics devices & Circuits  Topic- JFET  Student name – Kirmani Sehrish  Enroll. No

BJT transistors FET ( Field Effect Transistor) 1. Unipolar device i. e. operation depends on only one type of charge carriers (h or e) 2. Voltage controlled.

Electronics Technology Fundamentals Chapter 21 Field-Effect Transistors and Circuits.

CHAPTER 6 Field Effect Transistors (FETs)

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. MALVINO & BATES SEVENTH EDITION Electronic PRINCIPLES.

CHAPTER 4 :JFET Junction Field Effect Transistor.

FET ( Field Effect Transistor) 1.Unipolar device i. e. operation depends on only one type of charge carriers (h or e) 2.Voltage controlled.

MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.

LECTURE # 8 FIELD EFFECT TRANSISTOR (FET)

9 Transistor Fundamentals.

JFET Junction Field Effect Transistor.

Presentation transcript:

MALVINO Electronic PRINCIPLES SIXTH EDITION

JFETs Chapter 13

Junction field effect transistor (JFET) Drain G n Gate p p S VDD D VGG G Source S

JFET Unipolar device (one polarity of charge carrier) Voltage controlled (gate voltage controls drain current) High input impedance No minority carrier storage Source and drain are interchangeable in most low-frequency applications

Drain family of curves 10 0 V 8 VGS 6 -1 V ID in mA 4 -2 V 2 -3 V -4 V 5 10 15 20 VDS in Volts

Drain curves With VGS = 0 the drain current is maximum at IDSS VP = the pinchoff voltage When VDS = VP the depletion layers almost touch With VDS > VP the JFET acts as a current source VGS(off) = -VP

IDSS 10 0 V 8 VP = 4 volts VGS Constant current region 6 -1 V ID in mA 4 -2 V 2 -3 V -4 V 5 10 15 20 VDS in Volts VGS(off)

Ohmic region VP separates the active region from the ohmic region. The ohmic region is the almost vertical part of the drain curve. In this region, a JFET acts as a resistor. RDS = VP/IDSS

10 0 V 8 Ohmic region VGS 6 -1 V ID in mA 4 -2 V 2 -3 V -4 V 5 10 15 20 VDS in Volts

( ) Transconductance curve 10 8 ID = IDSS 1- VGS VGS(off) 2 6 ID in mA 4 2 -4 -3 -2 -1 VGS in volts

and ID(sat) << IDSS. Gate bias is suitable for the ohmic region. +VDD +VDD RD RDS Equivalent circuit RD ID(sat) = VDD RD Use 0 volts for VGS and ID(sat) << IDSS. RG -VGG

Q point in the ohmic region 10 0 V 8 VGS ID(sat) Q 6 -1 V ID in mA 4 -2 V 2 -3 V -4 V 5 10 15 20 VDS in Volts VDD ID RDS

Gate bias is not suitable RD R2 +VDD R1 RS Voltage-divider bias Gate bias is not suitable for the active region. ID(sat) = VDD RD + RS VS = VG - VGS VG - VGS RS IDQ =

Q point in the active region 10 0 V 8 VGS ID(sat) 6 -1 V ID in mA 4 Q -2 V 2 -3 V -4 V 5 10 15 20 VDS in Volts VDD

Transconductance Tells how effective the gate voltage is in controlling the drain current. gm = id/vgs Common units for JFETs are the micromho (mmho) or the more modern microsiemen (mS). gm is the slope of the transconductance curve. gm0 is the maximum value and occurs at VGS = 0.

( ) Transconductance curve 8 1- VGS VGS(off) gm = gm0 6 4 ID in mA 2 Max. slope gm0 8 1- VGS VGS(off) ( ) gm = gm0 6 Larger slope 4 ID in mA 2 -4 -3 -2 -1 Smaller slope VGS in volts

Common-source amplifier +VDD rd = RD RL A = gmrd RD R1 vout RL R2 vin RS

Source follower +VDD rs = RS RL RD R1 gmrs A = 1 + gmrs R2 vin RS vout

vout vin VGS Shunt analog switch RD vin < 100 mV RD >> RDS Series analog switch vout vin VGS RD Better on-off ratio than the shunt switch

Multiplexer vin1 vin2 vin3 vout RD V1 V2 V3

Voltage-controlled resistance Operates in the ohmic region with VGS values between 0 and cutoff. Works well for ac signals of 200 mVPP or less. Small-signal resistance: rds = VDS/ID As VGS becomes more negative, rds increases. Both series and shunt operation can be used.