H.-G. Moser MPI Munich Valerio Re INFN AIDA WP3 Summary 1 Status of milestones and deliverables Status of sub-projects Plans for the last year of AIDA 3rd AIDA annual meeting Vienna, March 2014

H.-G. Moser MPI Munich Valerio Re INFN Objectives 2 3rd AIDA annual meeting Vienna, March 2014

H.-G. Moser MPI Munich Valerio Re INFN Sub-Projects 3 3rd AIDA annual meeting Vienna, March 2014 WP3.2 (3D interconnection) Bonn/CPPM: Interconnection of the ATLAS FEI4 chips to sensors using bump bonding and TSVs from IZM (large diameter TSV, large interconnection pitch). CERN: Interconnection of MEDIPIX3 chips using the CEA-LETI process INFN/IPHC-IRFU: Interconnection of chips from Tezzaron/Chartered to edgeless sensors and/or CMOS sensors using an advanced interconnection process (T-MICRO or others) LAL/LAPP/LPNHE/MPP: Readout ASICs in 65nm technology interconnected to pixel sensors using the CEA-LETI or EMFT process. MPP/GLA/LAL/LIV/LPNHE: Interconnection of ATLAS FEI4 chips to sensors using SLID interconnection and ICV (high density TSVs) from EMFT. UB: 3D interconnection of 2 layers of Geiger-Mode APD arrays with integrated readout in Tezzaron Chartered technology. RAL/UPPSALA: Integration of a 2-Tier readout ASIC for a CZT pixel sensor using EMFT SLID technology and TSV including redistribution of I/O connections to the backside for a 4-side buttable device. WP3.3 (IP blocks) IP blocks in 65 nm CMOS (coordinated by CERN): The choice of the 65 nm CMOS generation was prompted by the needs of future vertex detectors, which can benefit from modern nanoscale technologies by obtaining smaller and more intelligent pixels in pixel detectors, more compact digital logic and lower power in front-end chips. IP blocks in SiGe (coordinated by LAL-CNRS): provide IP blocks for needs in calorimeters and TPCs. These two domains are demanding in high dynamic range and precision, so the choice of technology would be to use Silicon Germanium (SiGe).

H.-G. Moser MPI Munich Valerio Re INFN Milestones 4 3rd AIDA annual meeting Vienna, March 2014 post- poned Milestone achieved if some of the subprojects are successful

H.-G. Moser MPI Munich Valerio Re INFN Deliverables 5 3rd AIDA annual meeting Vienna, March 2014 postponed Deliverable achieved if some of the subprojects are successful

H.-G. Moser MPI Munich Valerio Re INFN Agenda 6 3rd AIDA annual meeting Vienna, March 2014

H.-G. Moser MPI Munich Valerio Re INFN WP3.2: Bonn/CPPM 7 3rd AIDA annual meeting Vienna, March D interconnection of sensor and ATLAS FEI4 chip with TSV in periphery => reduce dead area (final target: 4-side buttable) => post processing, to be applied at existing chip TSVs, RDL and bump bonding by Fraunhofer IZM Test with FEI2 successful (tapered vias) Process needs to be changed for FEI4 (no front side processing) Use optimized bonding process for thin chips (<100µm) To be processed this year Connected Not connected

H.-G. Moser MPI Munich Valerio Re INFN WP3.2: MPP/GLA/LAL/LIV/LPNH 8 3rd AIDA annual meeting Vienna, March 2014 Interconnection of ATLAS FEI4 to thin, slim edge sensors  4 side buttalbe (Backside connectivity)  high TSV density (small diameter) SLID interconnection and TSV by Fraunhofer EMFT First SLID tests with FEI2 successful TSVs etched, but problems with tungsten filling FEI4 needs different TSV etching technology (fbackside) Status TSV design for FEI4 made Dedicated sensors produced (CIS, VTT) Plans SLID interconnection FEI4/Sensor (w/o TSV) Develop TSV process for FEI4 SLID FEI4/sensor with TSV (if time allows)

H.-G. Moser MPI Munich Valerio Re INFN WP3.2: LAL/LAPP/LPNHE/MPP 9 3rd AIDA annual meeting Vienna, March D device based on OMEGAPIX with high density bonding (35µm x 200µm staggered: 70µm pitch ASIC: 2-tier OMAGAPIX2, by TEZZARON, ordered Oct 2011, delivered Jan 2014 first tests promising Interconnection: CEA-LETI with slim edge sensors by VTT and CIS (avialble) Alternative (no new TEZZARON run in sight): 2D version of OMEGAPIX in 65nm technology (by Europractice, CERN?) (wafers needed for interconnect) Submission this year

H.-G. Moser MPI Munich Valerio Re INFN WP3.2: INFN/IPHC-IRFU 10 3rd AIDA annual meeting Vienna, March 2014 Establish a procedure to interconnect small pixels (20µm x 20µm) at pixel level 2-tier stack (2 x 50µm) Pixel sensors in both layers Top tier read out via bottom tier Sensors processed in 180nm CIS technology (TowerJazz) Thinning & SLID interconnection by Fraunhofer IMS Status: 6 wafers being processed, expected in May Plans: SLID interconnection finished in November Test at IPHC: December top tier bottom tier test sensor

H.-G. Moser MPI Munich Valerio Re INFN WP3.2: RAL/Uppsala 11 3rd AIDA annual meeting Vienna, March 2014 Demonstrate a pixel readout chip with 2 tiers and TSVs in every pixel Tier 1 (analogue) based on RAL HEXITEC chip (X-ray imaging) Tier 2 (dgitial): 12 bit DAC and readout Thinning, TSVs and SLID interconnection by EMFT Fraunhofer (like MPP project) Some delays due to contract issues First wafers delivered in October 2013 (6 months delay) TSVs and RDL are generally ok SLID interconnection seems to be of poor quality Plans: Delivered devices will be tested EMFT agreed to produce more devices free of charge 12 wafers purchases and sent to EMFT Assembled wafers expected by June 2014

H.-G. Moser MPI Munich Valerio Re INFN WP3.2: CERN 12 3rd AIDA annual meeting Vienna, March side buttable readout ASIC (based on Medipix) with TSV TSVs and RDL by CEA LETI (large diameter TSV, 60µm diam.) After TSV & thinning: chip performance unchanged Interconnection (bump bonding) by ADVACAM on edgeless sensors Sensor/chip assemblies work Next steps: Yield studies Ultrathin assemblies Using TIMEPIX (50µm & 50 µm)

H.-G. Moser MPI Munich Valerio Re INFN WP3.3: 65nm IP blocks 13 3rd AIDA annual meeting Vienna, March 2014 Contract with TSMC by CERN Foundry access via IMEC Long procedures for Signature of NDA is imminent Contract covers a period of 5 years ( ) Rad hard IP blocks designed (CERN) SRAM compiler I/O pad library Monitoring ADC Bandgap reference specified to 200Mrad Rad soft IP blocks designed (CERN) 2C slave HDLC communication protocol 7b8b communication protocol

H.-G. Moser MPI Munich Valerio Re INFN WP3.3: SiGe/SOI IP blocks 14 3rd AIDA annual meeting Vienna, March 2014 Electronics needs in calorimeters and TPCs : –large dynamic range, high speed, low noise, low offset, –need of precise capacitors and resistors, … Blocks : –ADC, TDC, DAC, Bandgap, OTA, Rad-tol memory, SEU resistant flipflop … Technology : SiGe or HV SOI  SiGe still moving a lot => shift to AIDA2  Choose XFAB SOI 180 nm (SOI --> fast, low substrate noise, low cost, HV capability, latchup free) Chose XFAB 0.18 µm SOI process Possible run for blocks soumission : 22 September 2014

H.-G. Moser MPI Munich Valerio Re INFN WP3.3: Others 15 3rd AIDA annual meeting Vienna, March 2014 AGH-UST Waiting for CERN 65nm contract In the meantime Two low power ADCs (6-bit, 10-bit), general purpose PLL and SLVS interface were designed in 130 nm, fabricated and tested. All blocks are fully functional, quantitative tests show excellent results for 6- bit ADC and good results for 10-bit ADC and PLL. Improved versions were submitted in February 2014 SACLAY: IP blocks desigend, to be submitteds (130 nm) 10-bit SAR ADC for Lumical

H.-G. Moser MPI Munich Valerio Re INFN Schedule (WP3.2) 16

H.-G. Moser MPI Munich Valerio Re INFN Next year’s objectives 17 3rd AIDA annual meeting Vienna, March 2014 WP3.2 Deliverable D3.8: detectors available for 3D assessment -> already achieved by CERN Deliverable D3.10:Assemsent of 3D integrated sensors -> push all subprojects to achieve deliverables Assess performance of 3D sensors taking into account: cost, processing time technological challenges experience with industry and vendors recommendation for further R&D WP3.3 Deliverables D3.4 (postponed) and D3.9 Prepare for final report