doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 1 Project: IEEE P Working Group for Wireless Personal Area Networks (WPANs) Submission Title: [60 GHz circuit design in silicon to enable markets] Date Submitted: [11 November, 2003] Source: [Brian Gaucher] Company [IBM TJ Watson Research] Address [1101 Kitchawan Rd. Yorktown Heights, NY 10598] Voice:[ ], FAX: [ ], Re: Abstract:[Silicon technology has matured to a point where fully integrated radio front ends at millimeter wave (60GHz) frequencies can be designed in silicon. Example 60 GHz silicon circuits are shown, as well as a conceptual fully integrated transceiver in a single low cost package, including antennas. This enablement in silicon approach can reduce the cost volume barrier to help enable markets quickly.] Purpose:[Information to be used to help demonstrate the validity of economical, very small, low power WPAN solutions.] Notice:This document has been prepared to assist the IEEE P It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein. Release:The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 2 60 GHz circuit design in silicon to enable markets Sectional slide

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 3 Agenda Introduction SiGe Technology: Roadmap, Characteristics, & Performance Extending SiGe into the mmWave Application Space Future direction for mmWave solutions Conclusion Agenda slide

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 4 Trends Unlicensed 60GHz band available –5 GHz of bandwidth ! –In principle, allows data rates of 100s of megabits to gigabits per second Current implementations of 60GHz front ends –based on AlGaAs/InGaAs heterojunction technologies –low levels of integration and high costs Next Generation IBM SiGe BiCMOS could enable low cost, monolithic RF front-end transceiver at 60 GHz –IBM's SiGe8HP (>200 GHz ft/fmax) If successful, this would make an entire new unlicensed frequency band commercially viable –Personal Area network applications (PAN) –Point-to-Point applications –Radar applications Significant implications for Silicon solutions –Lower power, lower cost, higher integration- –Overcome the “cost/volume” hurdle Agenda slide

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 5 Evolution of SiGe HBTs Significant improvement in F t /F max with each generation Technology 6HP 47/60 GHz/3.3V 7HP 120/100 GHz/1.8V 120/125GHz 8HP 200/180GHz/1.7V 200/250GHz Next Gen Target 300GHz/TBD 5HP 50/50 GHz/3.3V Technology ft/fmax 5 GHz WLAN 40 Gbps Sonet 24 GHz Vehicular radar 120 GHz DME 77GHz radar 60 GHz mmwave WPAN

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 6 Increasing speed of silicon technologies…. As silicon speeds increase, applications previously the domain of III-V compound semiconductors are captured  1 & 10 Gbps hardware shipping  1 st publications targeting 40 Gbps  Large scale integration  10 & 40 Gbps hardware shipping  1 st designs targeting 80 to100 Gbps  Medium scale integration  Focus:  on large V swing  High power  Small scale integration

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 7 Silicon proof point circuits and architectures have been demonstrated in the mmWave frequency range LNA f or 60 & 77GHz VCO f or 60 & 77GHz Amplifier f or 60 & 77GHz Direct conversion downconverter f or 60 GHz

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 8 World’s first 60GHz silicon direct down conversion mixer Most complex Si-based radio circuits ever reported at 60 GHz. First Gilbert-cell mixers at 60 GHz. Highest reported integration level for any technology at 60 GHz. –80 transistors –43 transmission lines or inductors First-pass working hardware using a Cadence design kit not optimized for millimeter-wave radio work Performance comparable or exceeding GaAs –NF (< 15 dB), –conversion gain (> 16 dB), –power (150 mW “core”) 1.9mm x 1.65mm

doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 9 Concept for a packaged 60GHz transceiver Fully integrated including antenna Low cost package Low frequency I/O