July 2004 2009 Lecture Side Lecture by Suradet Tantrairatn Lecturer and Researcher Chapter Three 3 June 2009 Fundamental of Electronic (Transistor)

Slides:

Advertisements

Similar presentations

July Lecture Side Lecture by Suradet Tantrairatn Instructor and Researcher Chapter Twelve week3 January 2009 Design of Control System in State.

Advertisements

1 Chapter 10. Bipolar junction transistor fundamentals Invented in 1948 by Bardeen, Brattain and Shockley Contains three adjoining, alternately doped semiconductor.

Bipolar Junction Transistors ECE Three Terminal Device Terminals ▫Emitter  The dominant carriers are emitted from the region (equivalent to the.

Bipolar Junction Transistors: Operation, Circuit Models, and Applications AC Power CHAPTER 10.

Chapter 13 : Bipolar Junction Transistors 13-0 Introduction 13-1 Current and voltage relationships 13-2 Common –emitter characteristics 13-3 Load –line.

Chapter 4 Bipolar Junction Transistor

Spring 2007EE130 Lecture 24, Slide 1 Lecture #24 HW#8 ANNOUNCEMENTS Start Problem 4 early! Note that Problem 3f has been revised OUTLINE The Bipolar Junction.

Spring 2007EE130 Lecture 23, Slide 1 Lecture #23 QUIZ #3 Results (undergraduate scores only, N = 39) Mean = 22.1; Median = 22; Std. Dev. = High =

Spring 2007EE130 Lecture 22, Slide 1 Lecture #22 OUTLINE The Bipolar Junction Transistor – Introduction Reading: Chapter 10.

Current Components inside Bipolar Junction Transistor (BJT) NPN BJT.

Spring 2007EE130 Lecture 27, Slide 1 Lecture #27 OUTLINE BJT small signal model BJT cutoff frequency BJT transient (switching) response Reading: Finish.

1 Electronic Circuits TRANSISTOR PRINCIPLES & APPLICATIONS.

Operation Theory BIPOLAR JUNCTION TRANSISTOR (BJT) Engr.Usman Ali khan.

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 7, slide 1 Introduction to Electronic Circuit Design.

Bipolar Junction Transistors (BJT) 8/25/2015www.noteshit.com1.

Microelectronics Circuit Analysis and Design

Module 2 Bipolar Junction Transistor. Learning Outcomes 1.The 3 terminals or regions of a BJT. 2.Construction and symbol of NPN and PNP types 3.Low power.

Chapter 6. Bipolar Junction Transistors (BJTs). Bipolar Junction Transistor Three terminal device Voltage between two terminals to control current flow.

BJT DC Circuits I. In this Lecture, we will:  Discuss further the dc analysis and design techniques of bipolar transistor circuits.  Examine some basic.

Bipolar Junction Transistor (BJT) Chapter March and 2 April 2014 Operation involves both electrons and holes, so is called “bipolar” Junction E-B.

Documentation and Requirement for Maintenance Program

Microelectronic Circuit Design McGraw-Hill Chapter 5 Bipolar Junction Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock Chap.

4-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Four Basic BJT Amplifiers.

Recall Lecture 8 Clipper – Step 1: Find the clip value by doing KVL at the output branch – Step 2: Set the conditions to know whether diode is on or off.

TRANSISTOR.  A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.  The transistor is the fundamental.

3-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Three The Bipolar Junction Transistor.

July Lecture Side Lecture by Suradet Tantrairatn Instructor and Researcher Chapter One week1 January 2009 Introduction to Automatic Control.

Small Signal Model PNP Transistor Section 4.4. BJT in the active region Electrons cross the forward biased BE junction and are swept reverse biased BC.

Chapter 3: Bipolar Junction Transistors. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey All rights reserved. Electronic.

1 Tai-Cheng Lee Spring 2006 Bipolar Junction Transistors (BJT) Tai-Cheng Lee Electrical Engineering/GIEE, NTU.

Introduction to BJT Amplifier BJT (Review). Still remember about BJT? The emitter current (i E ) is the sum of the collector current (i C ) and the base.

1 Concepts of electrons and holes in semiconductors.

Bipolar Junction Transistor (BJT) Chapter and 25 March Operation involves both electrons and holes, so is called “bipolar” Junction E-B is forward.

Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction BJT Fundamentals Reading: Pierret 10; Hu 8.1.

Full-Wave (Bridge) Rectifier

TRANSISTOR - Introduction BIPOLAR JUNCTION TRANSISTOR (BJT)

LARGE-SIGNAL BEHAVIOR OF BJTS Large-signal models in the forward-active region Effects of collector voltage in the forward-active region Ohmic and inverse.

1 Concepts of electrons and holes in semiconductors.

CSE251 Lecture 8: Introduction to Bipolar Junction Transistor (BJT)

The Bipolar Junction Transistor

COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 5.

PNP Section 4.3,3.6. Schedule 109/25ThursdayPNP 4.3, /30TuesdayBJT in saturation 4.5 L9/30Tuesday Measure Beta of a transistor.

BJT transistors Summary of DC problem 2 Bias transistors so that they operate in the linear region B-E junction forward biased, C-E junction reversed.

Regions of a Transistor A Bipolar Junction Transistor is a three terminal device containing 3 regions: Emitter, Base and Collector.

Chapter 4 Bipolar junction transistor Ir. Dr. Rosemizi Abd Rahim 1 Ref: Electronic Devices and Circuit Theory, 10/e, Robert L. Boylestad and Louis Nashelsky.

Bipolar Junction Transistor (BJT) Construction

CHAPTER 10 AC Power Bipolar Junction Transistors: Operation, Circuit Models, and Applications.

Bipolar Junction Transistors (BJT)

Lecture 25 OUTLINE The Bipolar Junction Transistor Introduction

Chapter 4 Bipolar Junction Transistor

Bipolar Junction Transistor

Electronics The Thirteenth Lecture

Reading: Finish Chapter 12

Sung June Kim Chapter 10. BJT Fundamentals Sung June Kim

Bipolar Junction Transistor (BJT) Chapter and 25 March 2016

(calculation: see slides 20+ in EC)

Chapter 22 Bipolar Transistors.

Lecture #22 OUTLINE The Bipolar Junction Transistor

Electronics Fundamentals

Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction

Lecture 25 OUTLINE The Bipolar Junction Transistor Introduction

Electronic Fundamental Muhammad Zahid

Lecture 4 OUTLINE Bipolar Junction Transistor (BJT)

Chapter 4 Bipolar Junction Transistor

Bipolar Junction Transistor (BJT) Chapter and 17 March 2017

Review & Problems.

Bipolar Junction Transistor (BJT) Chapter and 27 March 2019

Chapter 5 Bipolar Junction Transistors

Presentation transcript:

July Lecture Side Lecture by Suradet Tantrairatn Lecturer and Researcher Chapter Three 3 June 2009 Fundamental of Electronic (Transistor)

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Bipolar Junction Transistors (BJT)

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistor

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistors

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistors

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistors

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistor Structure

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 BJT

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 BJT

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 BJT

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Electronic

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Mode of Transistors

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Mode of Transistors

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistor Bias

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Transistor Bias

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Depletion Region of Transistor Bias

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 สภาวะการทำงาน 21 โดยทั่วไป V BE(on) ~ V และ V BC(on) ~ V NPN PNP

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Current Direction of Transistors

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Common Base Circruit

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Common-Base

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Common Emitter Circuit

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Common Collector Circruit

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Summary

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Summary

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 แบบจำลอง BJT ในย่าน forward active NPNPN P

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Example จงคำนวณหาแรงดันที่ขา B C และ E เมื่อกำหนดให้ ทรานซิสเตอร์มีค่า β = 100 และ V CE(SAT) = 0.2 V ถ้า (a) V B = 4 V (b) V B = 6 V (c) V B = 0 V

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Solution

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2 Solution

© AIRBUS UK LTD All rights reserved. Confidential and proprietary document. Month 200X2009 Subject Name Aircraft MaterialsPage 2