Results and discussion 34.6. Results and discussion.

Slides:

Advertisements

Similar presentations

Latest development of InGaN and Short-Wavelength LD/LED/VCSEL 屠嫚琳 Man-lin Tu.

Advertisements

High speed GaN micro-LED arrays for data communications

High Brightness LEDs Chapter5 Chapter6 屠嫚琳.

Application of Silicon Nanowire in Biosensor Student: HongPhan ID: Professor: Cheng-Hsien Liu.

High Brightness Light Emitting Diodes Chapter 1 Chapter 2 屠嫚琳.

12/03/ ZnO (Zinc oxide) by Alexander Glavtchev.

Light Emitting Diodes NanoLab Outline Motivation/Applications: Why LED’s? Background Fabrication Testing Conclusions.

1 POWER MANAGEMENT FOR SUSTAINABLE ENERGY SYSTEMS Graham Town Electronic Engineering Macquarie University.

Southern Taiwan University of Science and Technology 科技英文科技英文 Light Emitting Diodes Development and Application 組別：第 5 組組員：陳郅升陳勁華劉庭劭黃信憲陳俊安.

Kansas State University III-Nitride Deep Ultraviolet Photonic Materials and Structures Jingyu Lin & Hongxing Jiang DMR Growth of III-nitride Photonic.

Optical Characterization of GaN-based Nanowires : From Nanometric Scale to Light Emitting Devices A-L. Bavencove*, E. Pougeoise, J. Garcia, P. Gilet, F.

Improvement in light-output efficiency of Near-Ultraviolet InGaN–GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate 指導教授 : 管鴻教授報告學生 : 林耀祥日期：

Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics.

Analyzing the differences in the properties (Bulk Density and Porosity) of the 12 substrates used in the Growth cylinders experiment. Made by: Lynn, Susu.

[1] National Institute of Science & Technology TECHNICAL SEMINAR PRESENTATION DILLIP KUMAR KONHAR EI POLYMER ON CHIP Under the guidance of Mr.

Measurement of Integrated PA-to-LNA Isolation on Si CMOS Chip Ryo Minami ， JeeYoung Hong ， Kenichi Okada ， and Akira Matsuzawa Tokyo Institute of Technology,

Author : BOGDAN DUMITRACHI Coauthor : BOGDAN LUCIAN BUCUR Coordinator : Asist.univ.Dr. ANCA TORCATORU Effect of Magnification on Locating the Canals in.

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures Han-Youl Ryu, Jong-In.

1 High Brightness Light Emitting Diodes Chapter 7~8 Reporter ：陳秀芬 Adviser ：郭艷光教授 Date ： 2003/5/5(Study meeting)

A PRESENTATION OF … SIZE-SELECTED COMPOUND SEMICONDUCTOR QUANTUM DOTS BY NANOPARTICLE CONVERSION BRENT WACASER, KIMBERLY A DICK, ZEILA ZANOLLI, ANDERS.

班級：碩研電子二甲姓名：江宥辰學號： M 授課教師：蔣富成.  1. Crystalline Quality  2. Current Spreading Effect  3. Discussion  4. Reference.

Use different substrate for InGaN-GaN LED 陳詠升. Outline Introduction Experiment Results and Discussion Conclusion References.

Results and discussion. Conclusion In conclusion, thinning the sapphire substrate enables the control of the residual compressive stress developed in.

Y.Y. Outline Introduction Experiment Results and discussion Conclusion References.

Seminar Paper review 報告者: C.C.Hong.

Recent Progress of DUV-LED

1 Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer 指導教授 : 管鴻 (Hon Kuan) 老師學生 : 李宗育.

Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes D.P. Han, J.I. Shim and D.S. Shin ELECTRONICS.

3 THINGS: Housing | Education | Broadband to support current and future job growth Aaron Qualls Planning & Economic Development Director City of Sandpoint,

Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer C. C. Kao, Y. K. Su, Fellow, IEEE, and C. L.

ENHANCE OUTPUT POWER OF GAN- BASED LEDS WITH NANO-PATTERN SAPPHIRE SUBSTRATE J. J. Chen, Y. K. Su, Fellow, IEEE, C. L. Lin, S. M. Chen, W. L. Li, and C.

Y.W. Lin. Outline Introduction Experiments Results and Discussion Conclusion References.

3. OLED panel Organic light emitting diodes (OLEDs) with a quasi-crystal (QC) structure are analyzed and applied in a head-mounted display (HMD) system.

1 Fig. 7 Measured I–V characteristics of LED-I, II, and III A 3.23V 3.22V 3.41V.

We recycle! Enjoy Learning Science. We recycle! It is made of glass. It is made of metal. It is made of cardboard. It is made of plastic.

ICT 1 SINTEF Edge-On Sensor with Active Edge Fabricated by 3D-Technology T. E. Hansen 1), N. Ahmed 1), A. Ferber 2) 1) SINTEF MiNaLab 2) SINTEF Optical.

Gallium Nitride Research & Development Rakesh Sohal

1 Enhanced performance of solar cells with anti- reflection layer fabrication by nano-imprint lithography Solar Energy Materials & Solar Cells ■ ( ■ ■

Kindergarten Math Common Core. Purpose of tonight… Share knowledge and information about Common Core, teaching practices, and expectations for student.

10-1 人生与责任淮安工业园区实验学校连芳芳 “ 自我介绍 ” “ 自我介绍 ” 儿童时期的我.

Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Temperature-dependent output power measured from the four fabricated devices with.

GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates Shoou-Jinn Chang, Member, IEEE, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T.

Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. Forward I−V characteristics measured for LED I, LED II, and LED III. Figure Legend:

(a)luminescence (LED) (b)optical amplifiers (c)laser diodes.

Dendritic ice crystals with faceted tip growing from the vapor phase

5 HACKS THAT WILL HELP YOU ACHIEVE YOUR MAJOR BEAUTY GOALS.

Yahoo Mail Customer Support Number

INRS- Énergie Matériaux Télécommunications Montréal, Québec, Canada 1 Gain Enhancement of a Dielectric Resonator Antenna Using a Cylindrical Electromagnetic.

Most Effective Techniques to Park your Manual Transmission Car

How do Power Car Windows Ensure Occupants Safety

مراقبت خانواده محور در NICU

The Demography of Mexicans

استخراج فلزات 1 آماده‌سازی بار. استخراج فلزات 1 آماده‌سازی بار.

دانشگاه شهیدرجایی تهران

تعهدات مشتری در کنوانسیون بیع بین المللی

بسمه تعالی کارگاه ارزشیابی پیشرفت تحصیلی

دومین کمیته مترجمین حاکمیت بالینی دانشگاه

Science and technology workshop

Shodmonov M.. The main goal of the work Analysis.

Nanowire-based polychromatic Leds ultra-efficient rgb LEDs based on nanowire technology Olof Hultin, RISE Acreo.

Progress on the 40 MHz SEU Test System based on DE2 Board

THE GROWTH ENVIRONMENT.

INRS- Énergie Matériaux Télécommunications Montréal, Québec, Canada 1 Gain Enhancement of a Dielectric Resonator Antenna Using a Cylindrical Electromagnetic.

Presentation transcript:

Results and discussion 34.6

Results and discussion

Turn-on ： PSS 2.93V UPSS 2.97V Vf ： PSS 3.08V UPSS 3.19V

Results and discussion 2.53 倍

Conclusion The disloca- tion density would be reduced greatly and higher extraction efficiency could be achieved from lens-shaped PSS. Our work brings out GaN-based LED structure with better performance for the next generation of high-brightness blue LEDs using the PSS method.

References Seong-Muk Jeong, SuthanKissinger, Dong-WookKim, SeungJaeLee, Jin-SooKim, Haeng-Keun Ahn, Cheul-RoLee “Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire ( ) substrate,” Journal of Crystal Growth 312 (2010) 258–262.

Thanks for your attention !