Power Semiconductor Devices Power Diodes Cross-sectional view of a pn- junction diode intended for power applications. I-V characteristics of a pn- junction.

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله.

Zener Diode Voltage Regulator

Power Semiconductor Systems I

Diodes and Transistors. Diodes Diodes are the semiconductor pn junction devices. They are formed by creating p-type and n-type semiconductors in a single.

SD Lab. SOGANG Univ. Doohyung Cho

Department of Electronics Semiconductor Devices 24 Atsufumi Hirohata 11:00 Thursday, 27/November/2014 (P/T 005)

SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Introduction SD Lab. SOGANG Univ. Gil Yong Song.

Power Device Characteristics Voltage Rating: Off state blocking voltage – exceed and destroy! Current Rating: On (saturation) state maximum – exhibits.

Lecture 5 OUTLINE PN Junction Diodes I/V Capacitance Reverse Breakdown

EXAMPLE 5.1 OBJECTIVE Vbi = V

J-FET (Junction Field Effect Transistor) Introduction The field-effect transistor (FET) controls the current between two points but does so differently.

5.1 Introduction 5.2 Equilibrium condition Contact potential

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

C H A P T E R 03 Semiconductors

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 19.1 Semiconductor Diodes  Introduction  Diodes  Electrical Properties.

PN Junction Diodes.

Semiconductor basics 1. Vacuum tubes  Diode  Triode 2. Semiconductors  Diode  Transistors Bipolar Bipolar Field Effect Field Effect 3. What’s next?

الکترونیک صنعتی دانشگاه تهران – بهزاد آسائی 1385.

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.

The metal-oxide field-effect transistor (MOSFET)

Lecture #12 OUTLINE Metal-semiconductor contacts (cont.)

PN-Junction Diode Characteristics

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

POWER ELECTRONICS EE‐312 Engr.Talha Ahmed Khan. Introduction to Power Electronics Power Electronics = Power + Control + Electronics Control deals with.

Voltage regulation with Zener diode By:Engr.Irshad Rahim Memon.

Power Electronic Devices

Depletion Region ECE Depletion Region As electrons diffuse from the n region into the p region and holes diffuse from the p region into the n region,

Power Electronic Devices

Power Electronics Lecture-9 Power Transistors & GTO Dr. Imtiaz Hussain

Chapter 1 Power Electronic Devices

Field-Effect Transistor

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 41 Other Modes of BJT Operation; Common-Emitter Gain So far we’ve studied BJT only.

Recap in Unit 2 EE2301: Block B Unit 2.

Digital Integrated Circuits© Prentice Hall 1995 Introduction The Devices.

Week 11b Lecture Materials Diodes and some of their uses: Review of pn-diode structure Diode I-V characteristics: Actual characteristic – exponential Ideal.

P-N Junctions Physical aspects of pn junctions Mathematical models Depletion capacitance Breakdown characteristics Basis for other devices Circuit Symbol.

Chapter 3 Solid-State Diodes and Diode Circuits

Chapter 5: Field Effect Transistor

EXAMPLE 9.1 OBJECTIVE pn(xn) = 2.59  1014 cm3

Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.

Empirical Observations of VBR

Introduction to Transistors

Ping Hsu Buff Furman John Luk 21SEP2010

Conductors – many electrons free to move

Ideal currents in a pn Junction

Diodes for Power Electronic Applications

Basic model p n +- Characteristics of a Schottky diode and a PN junction diode.

Introduction to Electronics

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 1 Introduction to Electronic Circuit Design.

CHAPTER 5 FIELD EFFECT TRANSISTORS(part c) (FETs).

EE 442 POWER ELECTRONICS I DIODE CIRCUITS Dr. Said A. Deraz Assistant Professor Electrical Engineering Department Faculty of Engineering, King Abdulaziz.

INTRODUCTION TO SEMICONDUCTORS

J-FET (Junction Field Effect Transistor)

LTFY – Physics and Engineering

Lecture 10 Power Device (1)

MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.

Other Transistor Topologies

Power Semiconductor Systems I

Dr John Fletcher Rm 131 Power Electronics Dr John Fletcher Rm 131.

Basics of Power Semiconductor Devices

Instrumentation & Power Electronic Systems

Chapter 3. PN Junctions and Related Devices

Physics of Semiconductor Devices

Chapter 1 – Semiconductor Devices – Part 2

Semiconductor devices and physics

Other Transistor Topologies

Lecture 10 Power Device (1)

Other Transistor Topologies

Presentation transcript:

Power Semiconductor Devices Power Diodes Cross-sectional view of a pn- junction diode intended for power applications. I-V characteristics of a pn- junction diode

Breakdown Voltage of Non-Punch-through Diodes for silicon. Punch-through in a reverse-biased diode (a) reverse-biased diode with depletion layer extending completely across the drift region- punch-through condition (b) electric field profile of the punch- through condition in a reverse-biased diode Breakdown Voltage of Punch-through Diodes doping in the n - drift region is negligible

Depletion Layer Boundary Control

On-State Losses: Role of On-Resistance Turn-On TransientTurn-Off Transient Reverse Recovery

Schottky Diodes

Power MOSFETs Basic Structure

Power MOSFETs Basic Structure

Power MOSFETs

Insulated Gate Bipolar Transistor