1 Wojciech Dulinski Pixel 2000, Genova, Italy Pixel Sensors for Single Photon Detection Contents - Idea and basic architecture.

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Presentation transcript:

1 Wojciech Dulinski Pixel 2000, Genova, Italy Pixel Sensors for Single Photon Detection Contents - Idea and basic architecture of a Hybrid Photo Diode (HPD) - HPD application in particle physics experiments -Pixel detectors for X-ray astronomy in space: p-n CCD and DEPFET matrix

2 Wojciech Dulinski Pixel 2000, Genova, Italy Hybrid Photo Diode (Hybrid Photo Detector)

3 Wojciech Dulinski Pixel 2000, Genova, Italy Single (visible) photon counting efficiency comes from limited QE of HPD photocathode

4 Wojciech Dulinski Pixel 2000, Genova, Italy Highly-segmented silicon sensor with low noise VLSI readout electronics as an active element of HPD

5 Wojciech Dulinski Pixel 2000, Genova, Italy Next logical step : silicon pixel array bump-bonded to a binary readout chip (LHC1) M.Alemi et al., CERN-EP/ (1999)

6 Wojciech Dulinski Pixel 2000, Genova, Italy Some remaining problems before having a practical device... M.Alemi et al., CERN-EP/ (1999)

7 Wojciech Dulinski Pixel 2000, Genova, Italy Potential application for back-illuminated, thinned CMOS APS devices for HPD integrated sensor - excellent noise figures - high spatial resolution

8 Wojciech Dulinski Pixel 2000, Genova, Italy Pixel-HPD application : LHCb-RICH detector M.Albrecht et al., NIM A 442 (2000) 164

9 Wojciech Dulinski Pixel 2000, Genova, Italy Particle tracking using: HPD + scintillating fibres or phosphor scintillator + CMOS Imager IEEE TNS Vol.43, No.3 June 1996, 2115 TOTEM experiment at CERN LHC

10 Wojciech Dulinski Pixel 2000, Genova, Italy Pixel-HPD application : ISPA (Imaging Silicon Pixel Array) Camera for Gamma Rays D. Puertolas et al., IEEE TNS Vol.42, No.6 December 1996, p.2221

11 Wojciech Dulinski Pixel 2000, Genova, Italy ISPA Camera for Gamma Rays energy resolution (122 keV)andspatial resolution D. Puertolas et al., IEEE TNS Vol.44, No.6 October 1997, p.1747

12 Wojciech Dulinski Pixel 2000, Genova, Italy Fully Depleted pn-CCD - derivative of the silicon drift detector (Gatti and Rehak, 1983) - JFET electronics integrated (1993) - large area detectors ( ) for (soft) X-ray astronomy in space Fully depleted detector volume (silicon, 300 mm thick) + extremely low noise level (ENC ~5 el.) = high quantum efficiency (single photon counting mode)

13 Wojciech Dulinski Pixel 2000, Genova, Italy pn-CCD : principal features P.Hall et al., SPIE, 3114: , 1977C

14 Wojciech Dulinski Pixel 2000, Genova, Italy pn-CCD : QE + Fe spectrum

15 Wojciech Dulinski Pixel 2000, Genova, Italy pn-CCD : for X-ray Astronomy: XMM-Newton Observatory

16 Wojciech Dulinski Pixel 2000, Genova, Italy Use of a high-energy physics detector technology : Back-illuminated, fully-depleted CCD image sensors for use on optical and near-IR astronomy D.E.Groom et al, NIM A 442 (2000) 216

17 Wojciech Dulinski Pixel 2000, Genova, Italy DEPFET Pixel Sensor for X-rays - can be back illuminated, can have a fill factor of 1, can be made very large (all pros of CCD) - does not need a charge transfer, no out-of-time events, every pixel is xy-addressable (all pros of APS) - in addition, can have a non destructive multiple readout to reach very low noise figures Device concept: combination of FET transistor with sideward depletion (drift chamber) J.Kemmer, G.Lutz et al. NIM A 288 (1990) 92

18 Wojciech Dulinski Pixel 2000, Genova, Italy DEPFET as pixel detector

19 Wojciech Dulinski Pixel 2000, Genova, Italy DEPFET : excellent noise figures (9 electrons rms.) at room temperature!

20 Wojciech Dulinski Pixel 2000, Genova, Italy Instead of conclusion and prospects... Posted: 2 Jun 2000 Quantum dots detect single photons A single-photon detector based on quantum dots has been developed for the first time by researchers at Toshiba's European laboratories in the UK. Conventionally single photons are detected by multiplying a photo-generated electron using an avalanche process. The Toshiba researchers, in collaboration with Cambridge University, developed a device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes. SPIE Web

21 Wojciech Dulinski Pixel 2000, Genova, Italy Acknowledgements I’m very grateful to Thierry Gys (CERN) and Gerhard Lutz (MPI), for their efficient help in the preparation of this talk!