Chapter 7: Building Blocks integrated-Circuit Amplifiers

IC Design Philosophy  Discrete Circuit v.s. Integrated Circuit  Constraints for IC Large- and moderate-value resistors Large capacitors  Opportunities for IC Constant-current sources Very small capacitors (in the picofarad and fraction of a picofarad range)

Comparison of the MOSFET and BJT  MOSFET CMOS: the most widely used IC technology for both digital and analog as well as mixed-signal applications Practical infinite input resistance Can be made quite small Manufacturing process is relatively simple  BJT Higher output currents High reliability under severe environmental conditions, such as in the automotive industry

6.3 IC Biasing i D – v DS Characteristics

6.3 IC Biasing The Basic MOSFET Current Source SATURATION

6.3 IC Biasing The Basic MOSFET Current Source (cont.) Effect of V o on I o Effect of Channel Length Modulation Output Resistance V A2 : Early Voltage  Channel Length

6.3 IC Biasing MOS Current-Steering Circuits Effect of V o on I o Difference Q 2 and Q 5 Current Source, Current Sink

6.3 IC Biasing BJT Circuits Current Transfer Ratio Case 1: m = 1 Case 2: Output Resistance

6.3 IC Biasing BJT Circuits – Current Steering Effect of V o on I o

6.3 IC Biasing BJT Circuits: A Simple Current Source

6.4 High-Frequency Response The High-Frequency Gain Function S  0, F(s)  1

6.4 High-Frequency Response Determining the 3-dB Frequency f H A dominant pole exits if the lowest frequency pole is at least two octaves (a facotr of 4) away from the nearest pole or zero.

6.4 High-Frequency Response Determining the 3-dB Frequency f H (cont.)

6.4 High-Frequency Response Determining the 3-dB Frequency f H (cont.)

Homework 5.77, 5.112, 4.11, 4.45, 4.74