Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.

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Presentation transcript:

Particle motion in the inversion layer

NMOS -- p type semiconductor – V GS > V T & saturating V DS

NMOS -- p type semiconductor -- gate voltage V GS > V T – experimental measurement of parameters (linear) G V

NMOS -- p type semiconductor – V GS > V T & saturating V DS

NMOS -- p type semiconductor -- gate voltage V GS > V T – experimental measurement of parameters (saturation) G V

Transient analysis

NMOS -- p type semiconductor – normal biasing

Transconductance – non-saturation

Transconductance –saturation

Electrical circuit model G in

Electrical circuit modeling a MOSFET

Electrical circuit modeling a MOSFET low-frequency

Electrical circuit modeling a MOSFET high frequency

Electrical circuit modeling a MOSFET gain

Frequency limitations G V --

Ames

Simple three-dimensional unit cell