NanoFab Simulator Update Nick Reeder, May 17, 2012

Minor Updates Thermal Oxidize code: No longer identifies SiO2 as doped after doped Si is oxidized. Added ion mill, CF4, and SF6 plasma etches. – Had to make many assumptions, due to scarcity of data in Williams’ etch-rate tables. Changed vertical and horizontal scales on display. – Question: What should height and width of displayed area be (in microns), and does this need to be adjustable by the user?

Updates to Implant Code User now specifies dopant, dose, and ion energy. Code computes depth and doping concentration. Thresholds for doping levels: – Undoped if concentration < ions/cm 3 – n or p if  concentration < – n+ or p+ if  concentration < – n++ or p++ if  concentration

Updates to Sputter Code User now specifies sputtering angle, and code simulates deposition from that angle. Fixed: sputter is no longer deposited on shaded surfaces. Algorithm is iterative and time-consuming due to complexity of resulting contours.

To-Do List Write new code for – Bake – Lift-off – Clean – Profilometer Fix spin-coat code so that resist does not adhere to underside of horizontal surfaces. In expose code, implement diffraction of UV in air and absorption within resist. Add other dry etchants (listed in 3/30/12 meeting). Fix evaporate, CVD, sputter, oxidize, develop, polish dialog boxes to ask user for correct parameters, and write code to compute depth from these values. Write time-cost-quality code for all operations. Write online help text. Produce videos, photos, text for “Learning” tab.

ActivityNot startedPartialComplete Simulation coding CleanX Spin coatX BakeX Mask/Expose/DevelopX EvaporateX Thermal oxidationX CVDX SputterX Wet etchX Plasma etchX Lift offX PolishX ImplantX Track time, cost, quality of each processX User -interface coding History with option to revertX Save/open history filesX Edit colorsX User-defined materialsX ProfilometerX Producing embedded media (videos, photos, etc.)X TestingX DocumentationX