Quick Presentation: 128Mb to 1Gb Quad SPI FL-S NOR Flash Family FL-S = Cypress’s 3.0-V, 65-nm NOR Flash Memory Family With MirrorBit®1 Technology The Industry’s Fastest Quad SPI NOR Flash Memory Family for High-Performance Embedded Systems 1 Cypress Nonvolatile Memory cell technology with two localized electron storage locations to provide two data bits per cell, effectively doubling the NOR Flash Memory density Title

Performance Advantage Cypress: No. 1 in NOR Flash, SRAM, NVRAM Comparison to Competitors’ Memory Product Portfolios Product Category Cypress Competitors Performance Advantage Metrics ISSI Micron Toshiba Winbond Macronix Fujitsu No. 1 NOR Flash Parallel NOR Flash  Highest Read Bandwidth Fastest Program/Erase 102 MBps Serial NOR Flash   160 MBps HyperFlash™1 Highest Read Bandwidth 333 MBps No. 1 SRAM QDR®-IV Synchronous SRAM Highest RTR (random transaction rate) 2.1 GT/s Asynchronous SRAM with ECC2 Highest reliability <0.1 FIT3 MicroPower SRAM Lowest standby current 1.5 µA No. 1 NVRAM Serial F-RAM™4 100 µA Parallel nvSRAM5 Fastest NVRAM6 20 ns AGIGARAM®7 Highest-density NVRAM6 16GB Cypress has the broadest portfolio of high-performance memories for embedded systems 1 A Cypress NOR Flash memory product family that offers higher bandwidth than Quad SPI NOR Flash memory with one-third the number of pins of parallel NOR Flash memory 2 Error-correcting code 3 Failures In Time (billion hours) 4 Ferroelectric RAM 5 Nonvolatile SRAM 6 Nonvolatile memory that provides direct access to read and write to any memory location in any random order 7 A Cypress brand name Market Positioning

Cypress’s 256Mb (FL256S) Quad SPI NOR Flash Memory Applications Block Diagram Advanced driver assistance systems (ADAS) Automotive instrument clusters Automotive infotainment systems Networking devices Set-top boxes 256Mb Quad SPI NOR Flash Memory CS#8 I/O SRAM SCK8 Features IO08 Array Left X/Y Decoder Array Right Operating voltage range: 2.7 V to 3.6 V 100,000 program1/sector erase2 endurance cycles3 20-year data retention at +55°C SDR4 clock rate: 104-MHz QIO5 DDR6 clock rate: 80-MHz QIO5 Program1 time (256B): 0.25 ms (typical) Sector erase2 time (64KB): 130 ms (typical) Industrial temp range (AEC-Q100 opt.): -40°C to +85°C Industrial plus temp range (AEC-Q100 opt.): -40°C to +105°C Extended temp range (AEC-Q100 opt.): -40°C to +125°C Packages: 16-SOIC 300 mil, 8-WSON7 6 mm x 8 mm, 24-ball BGA 6 mm x 8 mm Control Logic IO18 IO28 IO38 RD10 Data Path RESET#9 CSP possible Collateral Availability Datasheet: S25FL256S Download App Note: Cypress FL-S SPI NOR Flash Memory Sampling: Now Production: Now 1 The operation required to change a value “1” to a value “0” in NOR Flash memory 2 The operation required prior to a NOR Flash memory program, in which all the bits in a sector are set to value “1” 3 The number of times a NOR Flash memory sector can be programmed/erased before it wears out 4 Single data rate: A mode of data transfer in which data is transferred once per clock cycle 5 Quad input/output (QIO): An interface that transfers addresses or data on four I/Os simultaneously 6 Double data rate: A mode of data transfer in which data is transferred twice per clock cycle 7 Very, Very Thin, Small-Outline, No-Lead semiconductor package 8 Signals used for standard Quad (x4) SPI interface; refer to the S25FL256S datasheet for signal definitions in the x1 and x2 mode 9 RESET# is an optional signal available on 16-SOIC and BGA packages 10 Read data buffer Product Overview

SPI NOR Portfolio S25FL2-K 90nm, 3.0V S25FL1-K 90nm, 3.0V S25FS-L 65nm, 1.8 V S25FL-L 65nm, 3.0V S25FL-P 90nm, 3.0 V S25FS-S 65nm, 1.8 V S25FL-S 65nm, 3.0 V S79FL-S 65nm, 3.0 V FL= 3.0 V FS= 1.8 V P,K= 90nm L,S= 65nm Density (Name) SDR / DDR * footnotes 1Gb1 133 MHz / 80 MHz * I, IA, IP, IPA Q215 1Gb1 133MHz / 80MHz * I, IA, IP, IPA 1Gb1 133 MHz / 80 MHz * I, IA, IP, IPA 512Mb 133 MHz / 80 MHz * I, IA, IP, IPA Q215 512Mb 133 MHz / 80 MHz * I, IA, IP, IPA 512Mb1 133 MHz / 80 MHz * I, IA, IP, IPA Q215 ≥256Mb 256Mb 133 MHz / 66 MHz * I, IA, IP, IPA, E, EA Q316 256Mb 133 MHz / 66 MHz * I, IA, IP, IPA, E, EA Q116 256Mb1 104 MHz / -- * I, IA 256Mb 133 MHz / 80 MHz * I, IA, IP, IPA 256Mb 133 MHz / 80 MHz * I, IA, IP, IPA, E, EA 256Mb1 133 MHz / 80 MHz * I, IA, IP, IPA Q215 128Mb 133 MHz / 66 MHz * I, IA, IP, IPA, E, EA Q316 128Mb 133 MHz / 66 MHz * I, IA, IP, IPA, E, EA Q116 128Mb (FL129P) 104 MHz / -- * I, IA, IP, IPA 128Mb 133 MHz / 80 MHz * I, IA, IP, IPA 128Mb (FL128S) 133 MHz / 80 MHz * I, IA, IP, IPA, E, EA 128Mb (FL128P) 104 MHz / -- * I, IA, IP, IPA 128Mb (FL127S) 108 MHz / -- * I, IA, IP, IPA 64-128Mb 64Mb 108 MHz / -- * I, IA, IP, IPA, E, EA 64Mb Contact Sales 64Mb 104 MHz / -- * I, IA, IP, IPA 64Mb 133 MHz / 100 MHz * I, IA, IP, IPA, E, EA Q116 16Mb 65 MHz / -- * I Q116 32Mb 108 MHz / -- * I, IA, IP, IPA, E, EA 32Mb Contact Sales 32Mb 104 MHz / -- * I, IA, IP, IPA 8Mb 76 MHz / -- * I 16Mb 108 MHz / -- * I, IA, IP, IPA, E, EA ≤32Mb 4Mb 85 MHz / -- * I *I = Industrial: −40ºC to +85ºC IA = Industrial, AEC-Q100: −40ºC to +85ºC IP = Industrial plus: −40ºC to +105ºC IPA = Industrial plus, AEC-Q100: −40ºC to +105ºC E = Extended: −40ºC to +125ºC EA = Extended, AEC-Q100: −40ºC to +125ºC 1 S70/S79 series (stacked die) Production Sampling Development Concept Status Availability QQYY QQYY EOL (Last-Time-Ship) QQYY Roadmap

Here’s How to Get Started Download the datasheet: S25FL256S Download our app note: Cypress FL-S SPI NOR Flash Memory Register to access online technical support Contact Cypress for more information Set-top Box by Pace LTE Networking Device by D-Link Getting Started