Magnetic and structural properties of manganese doped (Al,Ga)N studied with Emission Mössbauer Spectroscopy Spokespersons: Alberta Bonanni Haraldur Páll.

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Presentation transcript:

Magnetic and structural properties of manganese doped (Al,Ga)N studied with Emission Mössbauer Spectroscopy Spokespersons: Alberta Bonanni Haraldur Páll Gunnlaugsson Contact person: Karl Johnston Proposal to the ISOLDE and Neutron Time-of-Flight Committee

Why study Nitride III-V’s Importance of (GaN, AlN, InN) system The majority of LEDs commercially available are based on these materials, high-power devices, etc... GaN doped with Mn is a dilute magnetic semiconductor (T C RT with hole doping

Dilute magnetism in GaN

(Ga,Mn)N dilute magnetic semiconductors (superexchange interaction provided) condensed magnetic semiconductors (we can produce ordered arrays of magnetic nanocrystals) + Mg/structural defects: functional Mn/Mg complexes which allow tuning of the spin state and the optical properties of the system

Why study (Al,Ga)N ? One can tune the band gap over an exceptionally large range GaN  AlGaN (a 0 engineering):  Tuning of band-gap & magnetism (p-d hybridization) [Navarro APL 101 (2012) ]

Why ISOLDE? We can apply 57 Mn (T ½ =1.5 min.)  57M Fe Use emission Mössbauer spectroscopy Dilute implantations (<10 -3 at.%) – Non overlapping damage cascades – Avoid interacting probe atoms (~10 -2 at.%) – Role of defects automatically addressed None of which is possible using traditional Mössbauer spectrsocpy techniques Valence(/spin) state of probe atom (Fe n+, Sn n+ ) Symmetry of lattice site (V zz ) – Differ amorphous/point-defects (angular dependence) Diffusion of probe atoms (few jumps ~100 ns) Binding properties (Debye-Waller factors) Magnetic interactions (ferro/para) Paramagnetic relaxation (~ Hz) Can usually detect and distinguish up to 4-5 spectral components (substitutional, interstitial, damage, vacancy- defects,…)

Feasibility of current proposal: Already have data on end-members Substitutional Fe (Fe S ) Fe-V complexes (Fe C ) Fe 3+ typ. error

Feasibility: Material (Al,Ga)N:Mn made by MOVPE (metalorganic vapour phase epitaxy) Characterization: – HRTEM, EELS; – HRXRD and synchrotron XRD; – synchrotron XANES and EXAFS; – magneto-photoluminescence; – SQUID magnetometry; – EPR (electron paramagnetic resonance); – magneto-transport.

Experimental plan: Temperature series: 57 Mn, 2-4 h per series Site populations Annealing of defect Spin lattice relaxation rates – ~5 (Al,Ga)N compositions – 3.5% Mn doped ~5 (Al,Ga)N compositions – Specific (Al,Ga)N and ~5 Mn concentrations External B field, angular measurements, isothermal annealing, quenching experiments (HT impl/LT meas) + … 119 In (2.3 min)  119M Sn; 57 Co (272 d)  57M Fe measurements

Formal beam request: Isotope (T ½ )Minimum Intensity (µCi) Energy (keV) ShiftsTargetIon source 57 Mn (1.5 min)(2-3) × 10 8 ≥ 509UC x Mn RILIS 119 In (2.3 min)(2-3) ×10 8 ≥ 502UC x In RILIS 57 Co (270 d)9×10 7 ≥ 502 ZrO 2 or YtO 2 VADIS or Co RILIS Total 13

Mössbauer collaboration at ISOLDE/CERN Vienna: A. Bonanni Aarhus: H. P. Gunnlaugsson, G. Weyer, A. Svane CERN: K. Johnston Berlin: R. Sielemann Milan: R. Mantovan, M. Fanciulli South Africa: D. Naidoo, K. Bharuth-Ram, H. Masenda, M. Ncube Leuven: G. Langouche, L. Pereira Reykjavík: T. E. Mølholt, S. Ólafsson, H. P. Gíslason

Funding agencies involved European Research Council [ERC] funded project [ERC1]ERC Advanced Grant [P ] FunDMS - Functionalisation of diluted magnetic semiconductors European Commission funded network [Net1]EC FP7 Marie Curie Networks - Marie Curie Initial Training Network on Nanoscale Semiconductor Spintronics SemiSpinNet [EU FP ]; European Commission funded action [EC1]REGPOT , FP7 CAPACITIES “European Action towards a Leading Centre for Innovative Materials” (EAgLE, grant agreement #316014) FWF –Austrian Science Fund [Fonds zur Förderung der wissenschaftlichen Forschung] funded projects [FWF1]“Magnetic nitrides probed via microwave resonances” [P24471] [FWF2]“Determination of ferromagnetic phase diagram in nitrides” [P22477] [FWF3]“Controlling the formation of magnetic nanocrystals in diluted magnetic Semiconductors” [P20065] [FWF4] “Carrier-induced ferromagnetism in (Ga,Fe)N” [P17169] Danish National Science Foundation Travel grants for CERN related research Icelandic Centre for Research (RANNIS) National Research Foundation/Department of Science and Technology, South Africa