Photovoltaics Continued: Chapter March 2014

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Photovoltaics Continued: Chapter 14 10 March 2014

Photon Emission in Semiconductor EF EC EV Conduction band Valence band Photon Eg When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon. The wavelength of the light depends on the band gap of the semiconductor material Semiconductor materials: Si, Ge, GaAs, InGaAs, AlGaAs, InP, SiGe, etc

Laser Diodes Lasers (Light Amplification by Stimulated Emission) Photon emission processes: Absorption Photodetectors Spontaneous emission LEDs Stimulated emission Lasers

Laser Cavity Design Laser cavity design: GaAs N+ GaAs P+ Current Total reflector Partial reflector Electrodes Laser cavity design: Laser medium is similar to LEDs, Extra components a in laser cavity are the mirrors at two facing planes (facets) for lasing mode selection. The laser light is monochromatic and coherent due to the mode selection in the cavity design

Semiconductor Quantum Wells (QWs) A narrow gap semiconductor is sandwiched between layers of a wide band gap semiconductor Quantum confinement takes place when the well thickness is comparable to De Broglie wavelength of the particle Electron movement is confined in the quantum well growth direction Examples: GaAs/AlAs, InGaAs/AlInAs. 14 14

Application of QWs — Diode Laser Disadvantages: Emission wavelength depends on material Very difficult to generate more than one color per laser Difficult to generate long wavelength, i.e., colors in the mid- to far- infrared region n-AlGaAs GaAs p-AlGaAs Electrode +V Conduction band Valence band Band gap Light 15 15

Semiconductor Materials vs. LED Color General Brightness GaP GaN GaAs GaAIAs -- Green, Red Blue Red, Infrared Super Brightness GaAsP InGaN Red Red, Yellow Green Ultra Brightness InGaAIP Red, Yellow, Orange