Owner: EWOO Rev *C Tech lead: KEER Replace EEPROMs with a Superior Solution F-RAM Solution for Smart E-Meters Presentation: To provide an engineering overview to customers for a Cypress solution. Title slide: To define what the presentation will cover. The subtitle is a one-sentence statement of the key opportunity.

Owner: EWOO Rev *C Tech lead: KEER 33 million Smart E-Meters will be produced this year, with a 20.7% CAGR through 2017 Electric utilities are demanding more smart functionality from E-Meters Time-of-day usage tracking Power quality monitoring Real-time communication Tamper-detection sensors and alarms This functionality requires new components–including additional nonvolatile memory–resulting in higher BOM cost and power consumption Smart E-Meter BOM cost and power consumption are key design parameters High demand for Smart E-Meters has increased competition Utilities demand low-power Smart E-Meters to meet regional regulatory requirements You require low-cost and low-power nonvolatile memory solutions Market Vision: To define the market opportunity. Presents compelling data and end product photos relevant to the local market. Smart E-Meter By Landis + Gyr E-Meters Are Getting Smarter 3

Owner: EWOO Rev *C Tech lead: KEER Terms You Will Hear Today Smart E-Meter An advanced electric meter that time-stamps and records consumption and device diagnostic data and automatically communicates it to a utility company Electrically Erasable Programmable Read-Only Memory (EEPROM) A common nonvolatile memory that uses floating-gate technology to store data Soak Time The 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers Write On Power Loss A failsafe method in which an MCU senses system power loss and instantly performs a Page Write of critical data to nonvolatile memory Write Endurance The number of times a nonvolatile memory cell can be rewritten before it wears out Wear Leveling A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached Ferroelectric Random Access Memory (F-RAM)™ A fast-write, high-endurance, low-power nonvolatile memory that uses ferroelectric technology to store data Terms of Art (ToAs): To clearly define for engineers all ToAs used in the presentation. To carefully and fully define Cypress-proprietary ToAs needed to explain our system solution. 4

Owner: EWOO Rev *C Tech lead: KEER Design Problems Engineers Face 1. Smart E-Meters must log all energy consumption and diagnostic data Smart E-Meter EEPROMs require 5 ms of active power per Page Write for Soak Time Soak Time requires additional capacitors or batteries to perform a Page Write On Power Loss 2. Typical Smart E-Meter applications exceed the 1 million write-cycle limitation of EEPROM Wear Leveling is required to improve the Write Endurance of EEPROM over a Smart E-Meter’s 15-year lifespan Wear Leveling requires up to 8x the memory density and additional software, increasing cost 3. Utility companies prefer Smart E-Meters with low power budgets Many utility companies specify a maximum 1-W consumption for a Smart E-Meter Eliminating Soak Time provides you with a larger power budget for other components F-RAM solves these problems Requires no Soak Time, enabling fast write Requires no additional capacitors or batteries Provides 100 trillion write cycles (200x the lifespan of a typical Smart E-Meter) Consumes 2x to 5x less active power than EEPROM F-RAM offers you an opportunity to replace EEPROMs with a superior solution Traditional Approach and Challenges: To present the traditional approach and the challenges engineers will face when using it to realize the Market Vision. Ends with a one-sentence segue clearly stating the benefit of the Cypress solution. 5

Owner: EWOO Rev *C Tech lead: KEER F-RAM Solution: Simple and Superior Cypress Solution: To introduce CY products and show compellingly how they solve the challenges highlighted on the previous slide. To provide a short, clear list of what to do to get started. 2x EEPROM, up to 8x density for Wear Leveling 2.2-mF capacitor to hold up system for 5 ms per page write for Soak Time Simplify a complex, EEPROM-based design… F-RAM pin-to-pin replacement for EEPROM SOIC8 By choosing F-RAM as your nonvolatile memory solution… To produce superior Smart E-Meters at a lower cost. Smart E-Meter by Landis + Gyr Wear Leveling software algorithm to increase EEPROM Write Endurance File System Memory Controller Worn Cell 6

Owner: EWOO Rev *C Tech lead: KEER Design a Smart E-Meter with F-RAM Smart E-Meter with F-RAM Example F-RAM is used as RAM and ROM Power usage data logging Diagnostic data logging Calibration data storage Factory default code storage Dynamic tariff data storage Dynamic configuration code storage F-RAM simplifies your design Replaces multiple EEPROMs Reduces board capacitance Eliminates Wear Leveling Serial F-RAM part options Densities: 4Kb – 2Mb Voltages: 2.0 – 5.5 V Interfaces: SPI: 10 – 40 MHz I 2 C: 1.0 – 3.4 MHz Packages: SOIC8, EIAJ8, TDFN8 Cypress F-RAM offers you a flexible and simple low-power nonvolatile memory solution Cypress Solution: To give details on CY products and show compellingly how they solve the challenges highlighted on a previous slide. To provide a short, clear list of what to do to get started. 6b

Owner: EWOO Rev *C Tech lead: KEER App Notes: F-RAM for Smart E-MetersF-RAM for Smart E-Meters SPI Guide for F-RAM F-RAM Data Protection During Power Cycles Design Challenges Capture real-time data instantly on power loss Ensure power to complete a Write On Power Loss Log data up to every second over a 15-year product lifespan Minimize the system power budget F-RAM Solution Requires no Soak Time to write data Requires no additional capacitors or batteries Provides 100 trillion write cycles Consumes 2x to 5x less active power than EEPROM F-RAM Value Suggested Collateral How To Get Started Block Diagram Smart E-Meter by Landis + Gyr Solution Examples: To give detailed one-page Solution Examples from the field in the specified format. F-RAM™ Solution Example – Smart E-Meters Download and view F-RAM App Notes Order Samples from your distributor: Cypress Distributor List Register at Cypress.com to access online technical supportCypress Distributor ListCypress.com 7a Microcontroller LCD Wired I/O Wireless Communications Powerline Communications F-RAM Voltage Sensor Current Sensor Tamper Sensor Nonvolatile Memory

Owner: EWOO Rev *C Tech lead: KEER Cypress F-RAM vs. Competition F-RAMEEPROMNOR FlashMRAM SPI Speed40 MHz20 MHz50 MHz40 MHz I 2 C Speed3.4 MHz1 MHzN/A Write Delay0 ms5 ms50 ms0 ms Endurance (Write Cycles) Unlimited Endurance (Solution Lifespan) 1 3,170 years2 years2 monthsUnlimited Wear LevelingNoYes No Active Read / Write Current 2 3 mA/3 mA10 mA/10 mA8 mA/15 mA10 mA/27 mA Sleep Current 2 6 µA3 µA50 µA115 µA Competitive Comparison: To define key features of the Cypress solution and demonstrate its superiority over the Next Best Alternatives (NBA’s). Must be credible and objective to the salesperson and customer. 8 1 Conditions: F-RAM writes at a 1-ms interval; EEPROM/Flash writes at a 1-minute interval 2 Conditions: Max current, SPI, 10 MHz – 40 MHz, 3 V, 85°C

Owner: EWOO Rev *C Tech lead: KEER Competitor EEPROM: (2x) Atmel AT kb Price: $ BOM Integration 5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $ Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 $2,000/man-week amortized over 500,000 units Value Added: $0.10 $2.82 $0.39 $0.10 $3.31 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 47% Total Savings: FM25CL64B-GTR $ $ Digikey website 1ku pricing on 7/18/2014 EVC Slide: To clearly define the value of the Cypress solution, including BOM integration and unique functionality. 9 F-RAM Smart E-Meter Solution Value

Owner: EWOO Rev *C Tech lead: KEER Here’s How to Get Started 1.Read our F-RAM Smart E-Meter Application Note (AN87352): 2.Ask your distributor for free samples of 64Kb to 2Mb F-RAM 3.Register to access online technical support: Cypress.comCypress.com Smart E-Meter by GE (USA) Smart E-Meter by Landis + Gyr 11 Call to Action: To tell customers how to start their design process.

Owner: EWOO Rev *C Tech lead: KEER References and Links App Note (AN87352) for F-RAM in Smart E-Meters: Cypress Serial F-RAM Web Page: FM25CL64B-GTR Datasheet: App Note (AN304) for F-RAM SPI Guide: 13 References and Links: Provide comprehensive view of resources to assist in learning about and adapting the solution.