Seminar Paper review 報告者: C.C.Hong.

Slides:

Advertisements

Similar presentations

starting substrates were undoped 5  m thick GaN films grown by hydride vapor phase epitaxy (HVPE) on c-plane sapphire. 60 nm thick SiOx film was then.

Advertisements

 To overcome these issues, a “dual-stage MQW” structure was proposed to enhance the electron injection and improve the crystalline quality of the overlying.

Latest development of InGaN and Short-Wavelength LD/LED/VCSEL 屠嫚琳 Man-lin Tu.

Electron Spectroscopies of InN grown by HPCVD Department of Physics and Astronomy Georgia State University Atlanta, Georgia Rudra P. Bhatta Solid State.

Semiconducting Light- Emitting Devices James A. Johnson 16 December 2006.

IBPOWER Kick off meeting – 07/02/08 Specific issues relating to plasma-MBE Growth under group III-rich versus group V-rich conditions Control of composition.

Research Highlights – N. Pelekanos

EE235 Class Presentation on Nanoimprint Lithography (Spring 2007) Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography.

By: Garett henriksen 5/4/2015

High Brightness Light Emitting Diodes Chapter 1 Chapter 2 屠嫚琳.

12/03/ ZnO (Zinc oxide) by Alexander Glavtchev.

May 25, 2007Bilkent University, Physics Department1 Optical Design of Waveguides for Operation in the Visible and Infrared Mustafa Yorulmaz Bilkent University,

Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)

1 Simulation of Light-Emitting Diodes and Solar Cells Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai, Tsun-Hsin Wang, Yi-An Chang, Fang-Ming Chen, and Shan-Rong.

APPLIED PHYSICS LETTERS 96, , 2010

Kansas State University III-Nitride Deep Ultraviolet Photonic Materials and Structures Jingyu Lin & Hongxing Jiang DMR Growth of III-nitride Photonic.

 It was found that phosphoric acid etching will not degrade electrical properties of the devices. It was also found that we can enhance the LED output.

Gallium Nitride

Improvement in light-output efficiency of Near-Ultraviolet InGaN–GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate 指導教授 : 管鴻教授報告學生 : 林耀祥日期：

2003/5/12 國立彰化師範大學 - 屠嫚琳 1 The Blue Laser Diode 屠嫚琳 Man-Lin Tu.

SSL Lab. SSL Lab. Solid State Lighting Lab. Southern Taiwan University 1 Adviser : Hon Kuan Adviser : Hon Kuan Wen-Cheng Tzou Wen-Cheng Tzou Reporter :

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes APPLIED PHYSICS LETTERS 101, (2012)

Low dislocations density GaN/sapphire for optoelectronic devices Low dislocations density GaN/sapphire for optoelectronic devices B. Beaumont, J-P. Faurie,

EBL Structure 1. N-EBL Barrier Well Al0.17Ga0.83 Al0.25Ga0.75 Al0.17Ga0.83 Structure 1 2.

AlGaN/InGaN Photocathodes D.J. Leopold and J.H. Buckley Washington University St. Louis, Missouri, U.S.A. Large Area Picosecond Photodetector Development.

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures Han-Youl Ryu, Jong-In.

1 High Brightness Light Emitting Diodes Chapter 7~8 Reporter ：陳秀芬 Adviser ：郭艷光教授 Date ： 2003/5/5(Study meeting)

1 Low Operation Voltage of Nitride-Based LEDs with Al-Doped ZnO Transparent Contact Layer 授課老師：李明倫指導教授：管鴻學生：蘇奕昕 C. H. Kuo, a,z C. L. Yeh, a P. H. Chen,

The Analysis of Light Absorption and Extraction of InGaN LEDs Jeng-Feng Lin, Chin-Chieh Kang, Pei-Chiang Kao Department of Electro-Optical Engineering,

Heterostructures & Optoelectronic Devices

班級：碩研電子二甲姓名：江宥辰學號： M 授課教師：蔣富成.  1. Crystalline Quality  2. Current Spreading Effect  3. Discussion  4. Reference.

Advisor: Prof. Yen-Kuang Kuo

報告人 : 洪國慶. Outline INTRODUCTION EXPERIMENTAL DETAILS RESULTS AND DISCUSSION CONCLUSION REFERENCES 2.

Use different substrate for InGaN-GaN LED 陳詠升. Outline Introduction Experiment Results and Discussion Conclusion References.

Growth of low defect density III-N on Nanowires S. M. Bedair, North Carolina State University, DMR Gallium Nitride (GaN) is a pivotal material.

Results and discussion Results and discussion.

1 Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer 指導教授 : 管鴻 (Hon Kuan) 老師學生 : 李宗育.

光電科技 LED: Materials and Device Aspects 授課教師 : 龔志榮教授國立中興大學物理學系中華民國一○二年四月二十二日 1.

Figure 3. Color online Current–voltage curves at a forward bias b reverse bias voltage in the nonetched and etched GaN LEDs. 3× × × ×10.

Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes D.P. Han, J.I. Shim and D.S. Shin ELECTRONICS.

Seminar Paper review 報告者 : B. J. Hu. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells V. Adivarahan, A. Chitnis,

Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer C. C. Kao, Y. K. Su, Fellow, IEEE, and C. L.

ENHANCE OUTPUT POWER OF GAN- BASED LEDS WITH NANO-PATTERN SAPPHIRE SUBSTRATE J. J. Chen, Y. K. Su, Fellow, IEEE, C. L. Lin, S. M. Chen, W. L. Li, and C.

Y.W. Lin. Outline Introduction Experiments Results and Discussion Conclusion References.

3. OLED panel Organic light emitting diodes (OLEDs) with a quasi-crystal (QC) structure are analyzed and applied in a head-mounted display (HMD) system.

EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm.

Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes 1 Sheng-Horng Yen, Miao-Chan Tsai, Meng-Lun.

Current spreading of III-nitride light-emitting diodes using plasma treatment Hsin-Ying Lee Ke-Hao Pan Chih-Chien Lin Yun-Chorng Chang Fu-Jen Kao Ching-Ting.

專題研討 ( 二 ) Electron-Blocking-Layer, n-EBL Hole-Blocking-Layer, HBL 碩研電子一甲 MA 楊書瑋.

Ru-Chin Tu, Chun-Ju Tun, Shyi-Ming Pan, Chang-Cheng Chuo, J. K. Sheu, Ching-En Tsai, Te-Chung Wang,and Gou-Chung Chi IEEE PHOTONICS TECHNOLOGY LETTERS,

Gallium Nitride Research & Development Rakesh Sohal

High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface Young-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi, and Shiro Sakai.

National Cheng Kung University Institute of microelectronics OEIC Lab. Jun P. 1 ZnO-based thin film double heterostructured- ultraviolet light-emitting.

Experimental Details 1 Fig. 1. Schematic diagram of the investigated LED layer structure. In the present work, the Mg doping width of the LT p-GaN interlayer.

GaN based blue LED Joonas Leppänen Emma Kiljo Jussi Taskinen

1 學生：黃順源老師：管鴻教授 Light Extraction Efficiency Enhancement of GaN Blue LED by Liquid-Phase-Deposited ZnO Rods copy.

GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates Shoou-Jinn Chang, Member, IEEE, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T.

Seminar Paper review 報告者 : Y. T. Huang. 231 – 261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia.

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. X-ray diffraction (XRD) 2θ-ω scans around (00·2) reflection for InxGa1−xN layers.

Barrier Current Flow in Nitride Heterostructures

BLUE LED Rubaeat Umar M.Sc. Nanoelectronic Systems(3rd Semester)

APPLIED PHYSICS LETTERS 99, (2011)

Study of the strain relaxation in InGaN/GaN

Steven DenBaars Materials and ECE Departments

The Blue Laser Diode (chapter 11~15) Speaker:Meng-Lun Tsai

دانشگاه شهیدرجایی تهران

by Shuji Nakamura Science Volume 281(5379): August 14, 1998

تعهدات مشتری در کنوانسیون بیع بین المللی

Presentation transcript:

Seminar Paper review 報告者: C.C.Hong

280nm UV LEDs grown on HVPE GaN substrates A. YASAN, R. McCLINTOCK, K. MAYES, S.R. DARVISH, P. KUNG, M. RAZEGHI, and R.J. MOLNAR OPTO-ELECTRONICS REVIEW 10(4), 287–289 (2002) semi-transparent Ni/Au(30/30) before and after annealing 50nm-thick p-GaN grown on AlN buffer

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi phys. stat. sol. (a) 188, No. 1, 121–125 (2001)

Enhanced Output Power of Near-Ultraviolet InGaN–GaN LEDs Grown on Patterned Sapphire Substrates D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 2, FEBRUARY 2005

Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template D. S. Wuu,a W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, and C. F. Lin APPLIED PHYSICS LETTERS 89, 161105 2006

Nitride deep-ultraviolet light-emitting diodes with microlens array M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang APPLIED PHYSICS LETTERS 86, 173504 (2005)

Thanks for your attention