Chapter 2 Semiconductor Materials and Process Chemicals 半導體製程 材料科學與工程研究所 張翼 教授

Figure 2.1 Bohr atom model.

Figure 2.2 Periodic table of elements.

Figure 2.3 Atomic structures of hydrogen, lithium, and sodium.

Figure 2.4 The three best electrical conductors.

Figure 2.5 Resistance of rectangular bar.

Figure 2.6 Semiconductor materials.

Figure 2. 7 Silicon resistivity versus doping (carrier) concentration Figure 2.7 Silicon resistivity versus doping (carrier) concentration. (After Thurber et al. Natl. Bur Standards Spec. Publ. 400-64, May 1981, tables 10 and 14.)

Figure 2.8 N-type doping of silicon with arsenic.

Figure 2.9 P-type doping of silicon with boron.

Figure 2.10 Electron conduction in N-type semiconductor material.

Figure 2.11 Hole conduction in P-type semiconductor material.

Figure 2.12 Electrical classification of materials.

Figure 2.13 Characteristics of doped semiconductors.

Figure 2.14 Physical properties of semiconductor materials.

Figure 2.15 Diagram of wafer molecule.

Figure 2.16 Four states of nature.

Figure 2.17 Temperature scales.

Figure 2.18 Pressure vacuum measurement.

Figure 2.19 Acid and base solutions.

Figure 2.20 pH scale.

Si (S) + 3HCl (g) → SiH Cl3 (e) + H2 SiO2 + C → Si + CO2 Purity Grade 98% 1500 - 2000℃ Si (S) + 3HCl (g) → SiH Cl3 (e) + H2 SiHCl3 + H2 → Si + 3HCl Purity Grade 99.999999999%

Silicon purification reactions SiO2 + C → Si + CO2 Purity Grade 98% 1500 - 2000℃ Si (S) + 3HCl (g) → SiH Cl3 (g) + H2 SiHCl3 + H2 → Si + 3HCl Purity Grade 99.999999999%

Wafer cutting and polishing from the ingot