Open Problems in Ion Implantation (MSSP, 6, pp1-14, 2003) CEC, Inha University Chi-Ok Hwang

Open Problems in Ion Implantation Modeling of the as-implanted damage; predicting the type of damage generated due to different annealing behaviour Coupling of MD and KMC; dynamic annealing between the cascades Critical point defect density (5-50%) c.f.) International Technology Roadmap for Semiconductors

Findings not explained by standard model Ion mass dependence

Findings not explained by standard model Heavy ions and medium-mass ions at low temperatures directly generate amorphous pockets, while light ions and medium- mass ions at room temperatures do not

Findings not explained by standard model Poly-atomic effect

Findings not explained by standard model Temperature dependence

Findings not explained by standard model Non-linear damage accumulation

Future Studies Predicting the defect type and distribution generated Critical point defect density for amorphization Area and ion dose criteria where local accumulated damages affect implanted ion range Damage accumulation model Different stopping powers Full MD criteria for ultra-low energy implantation Ion-beam amorphization modeling (of silicon) Multi-ion recoil approximation

MD & KMC (Ion Implantation & Annealing) MOLDY, UT-Marlowe, and MDRANGE should be combined and used depending on (dose rate), implanted ions and energies. For this, according to ion mass and energy the criteria should be set up appropriately. MODLY should be modified to simulate ion implantation. Finally, KMC should be combined with ion implantation simulation for the whole fabrication process.