Sensors Frank Hartmann for the Sensor WG CMS Upgrade Days HPK submission (main current topic) Possible next submission 3D sensors for innermost layers Sintef (sensors under test) CNM (sensors under design)

HPK Submission substrate typeFZ 200um MCZ 200umFZ 100umepi 100umepi 75umFZ 300umTotal & Active Thicknesscarrierthinningcarrier P-on-N Production N-on-P Production p-spray N-on-P Production p-stop 'nd metal production P-on-N66 2'nd metal production N-on-P p-stop66 2'nd metal production N-on-P p-spray66 Total Many different technologies thicknesses geometries structures with different measureables  Choice of technology

Cutting  Work Packages so far Pixel Multi-geometry strips Multi-geometry pixel Baby_std Baby_PA Baby_Strixel Diodes Test-structures Add_Baby aka Lorentz angle sensor – Lorentz Angle measurement – Neutron and proton irradiation cross calibration Diodes to be cut further (backup slides) All cut pieces come in an individual envelope ~ 30 pieces per wafer  3800 pieces

Tentative Schedule Initial Test and Campaign description September 2009 We started ~monthly meetings in January – More iterations of test descriptions – Next one: Final design approved by CMS: Double Metal design delivered to HPK: Start Delivery to CERN: End of June – End Delivery: ~Mid-End August??? (my guess) Ship sensors to institutes: Beginning of July First full pre-irradiation measurement: August-September First Irradiation: End of September … End of Campaign: End of 2011 = 1.5 y of campaign Not all institutes are ready yet! All measurement data will be handled by the Lyon database (former construction DB)

Commitments, so far baby_std Multi strip multi pixelstrixelPATSpixel Lorentz angleDiodesSIMSTB comments help appreciated80% 100% help needed not definedlogistics 80% for strixel and PA seems more or less ok PSI 50% Purdue 50% CERN20%100% xxx%??? DBxxx~30% Karlsruhe % annealing (100% strip) 30% crossC 100%10% Vienna crossC 100% HHannealing study? interested xxx% xxx~30% Perugia 50+% p-cross calib with LA-sensors???? Louvain n-irrad cross calib with LA sensors! FNAL 50% interested Firenze % strip testing also strip measurement on PS, together with CENR Rochester Zeuthen Bari Brown Santander Aachen Padova Helsinki to do see today Lyon DB

THE CAMPAIGN Calibration Radiation Tests; examples only

InstituteIV / CVstripmeasurementsTS Viennasuccessful Louvainsuccessfulstrange Rpolyx Hamburgsuccessful DESY Zeuthensuccessful Barisuccessful x Rochestersuccessfulmissing Cint, Rint, Pinhole; bad Ileakx Fiorentinosuccessful CERNsuccessful some missing structures Karlsruhesuccessful SantandersuccessfulMissing Ileak, Pinholesuccessful Fermilabsuccessfulx non-irradiated structure Calibration campaign

irradiated structure Institute Structure received IV / CVStrips, rampsTS Vienna X successful Louvain X xxx Hamburg X successful x DESY Zeuthenxxx Bari X xxx Rochesterxxx Fiorentinoxxx CERN X xxx Karlsruhe X successful Santanderxxx Fermilabxxx Calibration campaign

Mixed irradiations I  Mixed radiations with full annealing evaluation  Neutron fluence a bit adapted  Some intermediate proton/neutron only results  Full material info from diodes Small subset Proton dominated Neutron dominated

Mixed radiations II p-irrad (KA) (e.g. 15x10 14 ) n-irrad (Ljubljana) (e.g. 6x10 14 ) Short annealing - measuring Short annealing - measuring p-irrad (KA) (e.g. 15x10 14 ) n-irrad (Ljubljana) (e.g. 6x10 14 ) Wafer with both p- & n- irradiation Full measurement: Test beam (some) Long term annealing (many steps, many measurments p- & n- fluences defined by expectation for the different radii (with some adaptations) e.g. 15p+6n equals to R=15cm To save money and be efficient, not the real full half moon will be irradiated. This we will do with 4-5 wafers leaving 1-2 virgins To investigate the pure particle (p&n) dependence To investigate the mixed (p+n) (real) dependence 2 diodes out for full long term annealing Initial measurements

E.g. Multi-geometry strips, electrical Goes to irradiation Goes to Vienna Box Pitch adaptor 12×2 cables To the instruments bonds solder 31 strips in each group bonded together for C interstrip and R insterstrip measurements IV/CV clamps Biasing circuit 12 resistors Multi-geomtry strips goes here Measure: Before irradiation After first irradiation After second (mixed) irradiation (possibly additional annealing study)

E.g. Multi-geometry strips S/N & resolution Goes to irradiation 12×2 cables bonds solderclamps Multi-geomtry strips goes here Pitch adaptor This part can be exchanged with a CMS hybrid: Signal to Noise, & Resolution Goes to CRACK or x,y-table (cosmic, source) Biasing circuit 12 resistors Similar plans for the multi-geometry try long pixels Multi-geometry: erialId=slides&confId= erialId=slides&confId=77900

E.g.: Lorentz Angle Measurement Add_baby: Sensor with 64 strips, 60um pitch Measure displacement for different fields (up to 10 T), temperatures, voltages 1cm TOP-6APV 4,95cm 1.25cm B 5-6 sensors from same technology irradiated to different fluences on one hybrid Lorentzangle:

E.g.: Standard Baby Sensor behavior with fluence and annealing 1.Complete strip measurement 2.CCE (128 strips bonded) 3.Ramps on 5-10 strips after first irradiation 4.CCE (128 strips bonded) after first irradiation 5.Ramps on 5-10 strips after second irradiation 6.CCE (128 strips bonded) after second irradiation After second irradiation: Sensor bonded to ALIBAVA Measurement (S/N & IV/CV for several voltages, several temperatures with source and/or laser) Annealing Measurement Annealing Measurement Etc. Probe station ALIBAVA All steps fully automated in the one setup Baby_std: ionId=1&materialId=slides&confId=80949

Measurement Descriptions & Definitions Combination of – Initial talk at FNAL: – Diodes: & today – Multi-geometry: – Baby_std: – Baby_PA & _strixel: – Lorentz angle: – TS: to be defined by Vienna (TUPO ) Irradiation: & I have to do more homework and combine this to one central document! Etc. Mind, ALL structures ask for a multitude of measurements, e.g. : diodes are simple, their measurements are not (CCE,TCT,CV,IV)!

Next Submission No realistic planning yet: – Input from current HPK submission needed Reduce to one (max two) technology – Maybe 2011/2012 – Structure closer to “final” design, e.g.: 10 cm long structure with – 2*5 cm long strips, – 4*2.5 cm long strips – pt module geometry (2.5 mm long pixels) – Structures to evaluate DC coupling (AC coupling) – …

2E Configuration 4E Configuration Four 3D sensors mounted on plaquettes for testbeam: 2E_WB5_2 : 2E configuration, 280µm substrate thickness 4E_WB5_8 : 4E configuration, 280µm substrate thickness 4E_WB2-16_5 : 4E configuration, 200µm substrate thickness 2E_WB2-16_2 : 2E configuration, 200µm substrate thickness n+ (readout) p+ (bias) 3D Pixel Sintef Cooling tubes sensor bias wire

Results (3D Sintef): readout CAPTAIN Threshold [DAC] = 50 Lot of studies done in a short time Detector data still requires further studies Looks promising * 1 Vcal [DAC] = 65.5 electrons

3D Pixel CMN CNM will design the mask of the pixels; the mask will include one large module with a matrix of 8x2 detectors (PSI46 footprint) and various single chip detectors. Different test structures will be added such as DC 3D strips, 3D pads, polysilicon resistors etc. A total of 8 wafers will be fabricated – the cost will be paid by the GICSERV access. – The cost of the masks will be paid by PSI – CNM will process the wafers and will deposit the UBM (Ti/Ni/Au) and then ship the wafers to PSI for Indium deposition, dicing and flip chip. Ivan also commented that CNM and IFCA applied for national funding to collaborate in the development of 3D pixels detectors for CMS. Tentative Timetable TaskDue date Mask designMay 2010 Fabrication runNovember 2010 First testing at CNMDecember 2010 Indium depositionJanuary 2011 dicingFebruary 2011 Flip chipMarch 2011 Testing 1May 2011 irradiationSeptember 2011 Testing 2December 2011 DDTC Two different geometries for the back ohmic holes will be implemented in the design NEW!

BACKUP

Diode Cutting  2*2 diodes IN TS  8 individual diode_new  4 individual HPK diode

Reminder Backside aluminisation to allow backside illumination To allow Lorentz angle, CCE and TCT measurements Problem: most sensors come on carrier substrate – Usage of red laser form back not possible

3D mature yet? Introduced by: S.I. Parker et al., NIMA 395 (1997) 328 “3D” electrodes: - narrow columns along detector thickness - diameter: 10  m, distance:  m Lateral lower depletion voltage depletion: thicker detectors possible fast signal smaller trapping probability radiation hard to several p/cm 2  higher capacitances Edgeless: -Edge can be an active trench Short collection path/time = almost no trapping; charge of the complete volume is collected 1. 3D single column type (STC) suffer from a low field region between columns 2.3D double-sided double type columns (DDTC) more complicated full field polysilicon Phosphorus diff. oxide Very soft “corner” STC DDTC Quintessence: excellent progress but still some miles to go! DRIE Deep Reactive Ion Etching