Ioana Pintilie, Vilnius 2-6 june 20071 Defect investigation on MCz after 1 MeV neutron irradiation I. Pintilie 1, E. Fretwurst 2, A. Junkes 2 and G. Lindstroem.

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Ioana Pintilie, Vilnius 2-6 june Defect investigation on MCz after 1 MeV neutron irradiation I. Pintilie 1, E. Fretwurst 2, A. Junkes 2 and G. Lindstroem 2 1 National Institute of Materials Physics, Bucharest, P.O. Box MG-7, , Romania 2 Institute for Experimental Physics, Hamburg University, D-22761, Germany

Ioana Pintilie, Vilnius 2-6 june Materials MCz-Silicon wafers:, n/P, 100 μm, 1090  cm, Nd = 3.96x10 12 cm -3, CiS process (samples , and ) EPI-Silicon wafers:, n/P, 72 μm on 300 μm Cz-substrate, 169  cm, Nd = 2.55x10 13 cm -3, CiS process -standard Oxidation (EPI-ST) (samples and ) - diffusion oxygenated for 24 h/1100°C (EPI-DO) (samples and ) Irradiation: - 1MeV neutrons at Ljubljana; fluences of 3x10 11 cm -2 and 5x10 13 cm MeV protons (for comparison with 1 MeV neutrons) Annealing : Isothermal treatments at 80 0 C Investigation methods: - I-V, C-V, TSC, C- DLTS

Ioana Pintilie, Vilnius 2-6 june Defects in unirradiated samples  TDD-s already present in the as-grown material  H = eV  Ea = 0.15 eV  a n = 2.26x cm 2  n = 2.7x cm 2 N T = 5.14x10 10 cm -3  E(112K) – unkown defect present in the as-grown material:  H = eV  a n = 3x cm 2 N T = 2.89x10 10 cm -3

Ioana Pintilie, Vilnius 2-6 june TSC results Bistability of BD

Ioana Pintilie, Vilnius 2-6 june Ci, BD and IO 2 defects

Ioana Pintilie, Vilnius 2-6 june BD = TDD2  BD (+/++) :  H = eV  a n = 6.8x cm 2 N T as irradiated = 4.8x10 11 cm -3  BD (+/++) :  H = 0.23 eV  a n = 1.2x cm 2 N T 3h at RT = 3.8x10 11 cm -3

Ioana Pintilie, Vilnius 2-6 june Annealing studies at 80 0 C

Ioana Pintilie, Vilnius 2-6 june E45K level ~ TDD +/++ Ea = eV  n = 6x cm 2

Ioana Pintilie, Vilnius 2-6 june Defects Concentration E25KE30KH42KBD +/++ E45KVOBD 0/++ H116KCiOiVV+?IO2 Ea  x x x x x x x x x10 -16

Ioana Pintilie, Vilnius 2-6 june % increase of [VO] during annealing  V released from clusters may cause formation of complexes with deep acceptor levels (V 2 O, V 2 O 2 ) - 20% increase of the donors concentration during the first 20 min

Ioana Pintilie, Vilnius 2-6 june DLTS results on MCz Electron traps measured during cooling Hole traps measured during heating Pulsing with forward bias

Ioana Pintilie, Vilnius 2-6 june DLTS-annealing results

Ioana Pintilie, Vilnius 2-6 june Comparison between TSC results after 1MeV neutron and 26 MeV proton irradiation - E30K, H42K, IO 2, VO – enhanced generation after 26 MeV protons - H42K and IO 2 defects – strongly generated in MCz

Ioana Pintilie, Vilnius 2-6 june Summary MCz, EPI-ST and EPI-DO were studied comparatively after irradiation with 1 MeV neutrons and 26 MeV protons Main radiation induced defects: IO 2 – only in MCz H(42K) – strongly formed in MCz, impurity related C i - only in EPI-ST BD&TDD - the lowest generation in MCz?! - increase in the concentration during the first 20min at 80 C VO - the highest introduction rate in EPI-diodes (double compared with MCz) - 30% increase of [VO] during annealing  V released from clusters may cause formation of complexes having deep acceptor levels (V 2 O, V 2 O 2 ) H(116K), CiOi and V 2 & clusters – same generation rate in all materials