1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist.

Slides:

Advertisements

Similar presentations

MICROELECTROMECHANICAL SYSTEMS ( MEMS )

Advertisements

Photo Chemical Etching Presentation.  Since 1977, Lancaster Metals Science Corporation has met industries' need for precision metal parts and components.

MetalMUMPs Process Flow

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.

Photolithography Photolithography is the transfer of patterns, circuits, device structures, etc. to a substrate or wafer using light and a mask.

Overview of Nanofabrication Techniques Experimental Methods Club Monday, July 7, 2014 Evan Miyazono.

Etching Film deposition Photoresist coating Lithography Development Film etching Together with calibration sample Optical inspection Measure photoresist.

Chapter 14: Fundamentals of Microelectromechanical Systems

MEMS Cell Adhesion Device Andrea Ho Mark Locascio Owen Loh Lapo Mori December 1, 2006.

Bulk MEMS 2014, Part 1 Types of MEMS Bulk MEMS: anisotropic wet or DRIE of bulk silicon SOI MEMS: DRIE or wet etching of SOI.

Process integration

1 Microfabrication Technologies Luiz Otávio Saraiva Ferreira LNLS

SOIMUMPs Process Flow Keith Miller Foundry Process Engineer.

Bulk MEMS 2013, Part 2

The Deposition Process

© Fraunhofer IPMS T. Zarbock I I slide 1 MEMS CLEAN ROOM 1500 m 2, class mm (6”) Wafer line 3 shift preparation for R&D and pilot fabrication.

MEMS Fabrication and Applications Brought to you by: Jack Link & Aaron Schiller Date delivered on: Friday the third of May, 2013 ABSTRACT: Taking a brief.

1 ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 18: Introduction to MEMS Dr. Li Shi Department of Mechanical Engineering.

Top Down Method Etch Processes

Dry Etch and Thin films & Process Integration June 30th, 2015.

ES 176/276 – Section # 2 – 09/19/2011 Brief Overview from Section #1 MEMS = MicroElectroMechanical Systems Micron-scale devices which transduce an environmental.

J. Salonen, “Flip Chip Bumping Process at VTT" [presentation for GPG], 16-March-2007 Flip Chip/Bumping Process at VTT Last modified March 16, 2007 By Jaakko.

Lithographic Processes

McGill Nanotools Microfabrication Processes

Surface MEMS 2014 Part 1

CNT Based Solar Cells MAE C187L Joyce Chen Kari Harrison Kyle Martinez.

Why do we put the micro in microelectronics?. Why Micro? 1.Lower Energy and Resources for Fabrication 2.Large Arrays 3.Minimally Invasive 4.Disposable.

Integrated Circuit Devices Professor Ali Javey Summer 2009 Fabrication Technology.

IC Process Integration

Chapter Extra-2 Micro-fabrication process

© Pearson & GNU Su-Jin Kim MEMS Manufacturing Processes MEMS Devices The MEMS(Microelectromechanical systems) devices can be made through the IC Process:

Introduction to Prototyping Using PolyMUMPs

Top Down Manufacturing

Top Down Method Etch Processes

1 3 MEMS FABRICATION Ken Gilleo PhD ET-Trends LLC 24%

ITC-irst Researchers 217 Post docs 13 PhD students MM area FCS – Physics & Chemistry of Surfaces and Interfaces MIS – Microsystems IT area SRA –

Micro/Nanofabrication

VCSEL Fabrication Processing

ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

Fabrication Process for Micro Structures

Plasma bay modernised in Sentech SI 500 RIE cluster Si 3 N 4, SiO 2, polySi and Al etching 2 x Oxford System 100 ICP Si 3 N 4, SiO 2, polySi, polymers,

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

Side ViewTop View Beginning from a silicon wafer.

Chieh Chang EE 235 – Presentation IMarch 20, 2007 Nanoimprint Lithography for Hybrid Plastic Electronics Michael C. McAlpine, Robin S. Friedman, and Charles.

Process integration Wafer selection active role for the wafer ? passive role ? –thermal conductivity –optical transparency –flat,

Pressure Sensor Lecture

RTDs: Resistance Temperature Detectors 1 Simone Traverso.

MEMS 2016 Part 2 (Chapters 29 & 30)

(Chapters 29 & 30; good to refresh 20 & 21, too)

Microfabrication for fluidics, basics and silicon

Date of download: 11/12/2016 Copyright © 2016 SPIE. All rights reserved. A sketch of a micro four-point probe with integrated CNTs in situ grown from nickel.

Process integration 2: double sided processing, design rules, measurements

Process integration 1: cleaning, sheet resistance and resistors, thermal budget, front end

Simplified process flow for bonding interface characterization

Alternative process flows for reduction of steps

Bonding interface characterization devices

MEMS Two-Phase Vapor Escape Heat Exchanger

Process Flow for ESS5810 AMSF

MEMS, Fabrication Cody Laudenbach.

Fab. Example: Piezoelectric Force Sensor (1)

MEMS Two-Phase Vapor Escape Heat Exchanger

31/08/ GaAs and 5629 GaAs growth 5622 GaAs,

Add nitride Silicon Substrate.

MicroSystems & MicroFluidics Lab

Process flow part 2 Develop a basic-level process flow for creating a simple MEMS device State and explain the principles involved in attaining good mask.

Memscap - A publicly traded MEMS company

SILICON MICROMACHINING

BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.

David R. Pedersen, Michael H. Guddal University of California, Davis

Photolithography.

Presentation transcript:

1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist become negative PR coating and patterning, Mask#2 6. E-beam evaporation Cr/Ni Lift-off process 7. Double side alignment and Dry etching on back side, Mask#B 8. PR coating and patterning, Mask#3 Nickel etching and PR stripping 10. Thick PR coating and patterning, Mask#4 11. Nickel electroplating Thick PR stripping, Cr etching, and wafer dicing. 12. TMAH bulk etching 13. Anodic bonding process Process flow

Overview of the MEMS Devices

對準記號 (Alignment Mark) First Mask 2nd Mask Back Side 3 rd Mask 4th Mask

對準精度以及微影精度 Alignment Resolution and Lithography Resolution Alignment Resolution Lithography Resolution 400um 40um

Flow Channel 1 Channel width:160um Flow Channel 2

微流體結構 Flow Channel 3 Flow Channel 4 210um 200um 130um 200um

Flow Filter 120um 200um

Main square area length: 300 micrometer Corner width: 60 micrometer; length: 80, 160, 280, 360 micrometer Main square area length: 300 micrometer Corner area width: 80, 120, 160, 240 micrometer Main square area length: 212 micrometer, diagonal length: 300 micrometer. Corner width: 40 micrometer; length: 80, 150, 200, 260 micrometer Main square area length: 212 micrometer, diagonal length: 300 micrometer. Corner area horizontal length: 80, 180, 240, 280 micrometer. Corner Compensation 1 Corner Compensation 2 Corner Compensation 3Corner Compensation 4 角落補償

溼度感測器 Humidity sensor 1 Humidity sensor 2 Humidity sensor 3 Humidity sensor 4 Gap = 10um Gap= 20um Gap=5um Wall=20um Wall=30um Wall= 20um

溫度感測器及熱致動器 Temperature sensor Thermal Actuator 1Thermal Actuator 2 Gap:45um Beam width:110um Gap:100um Beam Width:100um Metal line width:20um

Flow Sensor 1Flow Sensor 2 Metal line width:40um Gap:20um Metal line width:40um Width:25um Gap:150um Width:200um

懸臂樑 Beam width: 20; Length: 40, 80, 120, 160, 200 micrometer Space between each beam: 20 micrometer. Beam width:50; Length: 40, 80, 120, 160, 200 micrometer Space between each beam: 50 micrometer.

Mass area: 500 micrometer. (Width) Open space: 300 micrometer Support beam width: 20 micrometer; Support beam length: 350 micrometer. Accelerometer 1 加速規 Accelerometer 2 Mass area: 1000 micrometer. (Width) Open space: 350 micrometer Support beam width: 20 micrometer; Support beam length: 300 micrometer. Accelerometer 3 Mass area: 1000 micrometer. (Width) Open space: 350 micrometer Support beam width: 20 micrometer; Support beam length: 350 micrometer.

壓力計 Pressure sensor 1 Beam Width=20 um Back Side Open Window=1080um x 1080um