Simulating current voltage characteristics in Intrinsic Josephson junctions M. Hromnik Yu. M. Shukrinov M Gaafar BLTP, JINR, Dubna , Russia

Layered Bi2Sr2CaCu2Oy(Bi2212) single crystals represent natural stacks of atomic scale intrinsic Josephson junctions. X:50mV/div Y:100mA/div I-V characteristics – Multi-branch structure – large hysteresis – Roughly equal spacing

Applications of Josephson Junctions Defines a Voltage standard - metrology Quantum computing – single electron transistors SQUIDS – superconducting quantum interface devices able to measure magnetic fields down to 10^-18 T STJs – Superconducting tunnel junction detectors which make use of quantum electron tunneling through the JJ – high speed electrical circuits

Numerical Procedure 4th order Runge Kutta method Heavy duty computation – O(10^9) time steps Intelligent data logging – on the fly averaging ensures a manageable and meaningful output Intelligent disk IO – buffering (significant effect of performance) Looping technique to match experimental method Parallel computing options limited

Time dependence Ql=Q0  (Vl+1-Vl) Q0 =   0 V0/rD2 div (0 E) = Q

Current Voltage characteristics

Longitudinal Plasma Wave

Results from CJJ+DC model

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