From Nanoscience to Nanomanufacturing STM manipulation of atoms 1989 AFM 1986 AFM manipulation of a SWNT 1999 Source: IBM Molecular logic gate 2002 Manipulation.

Slides:

Advertisements

Similar presentations

Nano-Electro-Mechanical Switches

Advertisements

Anodic Aluminum Oxide.

Unbounding the Future: the Nanotechnology Revolution by Eric Drexler Chris Peterson Gayle Pergamit Presented by Kalyani Komarasetti.

Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.

Chun-Chieh Lu Carbon-based devices on flexible substrate 1.

Scanning Probe Microscopy

Scanning Probe Microscopy ( STM / AFM )

CONTENT I. Introduction II. DEP force for CNTs Implementation III. Experimental results IV. Conclusions.

Metal-free-catalyst for the growth of Single Walled Carbon Nanotubes P. Ashburn, T. Uchino, C.H. de Groot School of Electronics and Computer Science D.C.

Nanotechnology Understanding and control of matter at dimensions of 1 to 100 nanometers Ultimate aim: design and assemble any structure atom by atom -

Materials Properties and Materials Selection Charts.

Nanoscale Tools Special microscopes are used to investigate atomic and molecular structures. The following pictures are just a few examples of the many.

Carbon Nanotube Memory Yong Tang 04/26/2005 EE 666 Advanced Solid State Device.

University of Maryland Mechanical Engineering Department Structures ‘at the bottom’: Carbon nanotubes (CNT) few nm diameter  m length (avg human.

Interconnect Focus Center e¯e¯ e¯e¯ e¯e¯ e¯e¯ SEMICONDUCTOR SUPPLIERS Goal: Fabricate and perform electrical tests on various interconnected networks of.

Array-Based Architecture for FET-Based, Nanoscale Electronics André DeHon 2003 Presented By Mahmoud Ben Naser.

Electrical Characterization of Nanowires Steven Kuo San Jose State University Thesis Advisor Dr. Emily Allen San Jose State University Research Advisor.

Nanoscale memory cell based on a nanoelectromechanical switched capacitor EECS Min Hee Cho.

Nanotechnology By: Adam Morte.

NIST Nanofabrication Facility. CNST Nanofab A state-of-the-art shared-use facility for the fabrication and measurement of nanostructures –19,000 sq ft.

Eliza Montgomery The Pennsylvania State University

Copyright © 2005 SRI International Scanning Probe Microscopy “Seeing” at the nanoscale.

 Nanotechnology  Fundamentals  Semiconductor electronics & Nanoelectronics  Milestones in nanohistory  Approaches to Nanoelectronics.

Physical Principles of Nanoelectromechanical Devices Robert Shekhter University of Gothenburg, Sweden.

Northwestern University Rod Ruoff Nanotechnology Fracture Mechanics of One- Dimensional Nanostructures.

Simple piezoresistive pressure sensor

National Science Foundation Silicon Carbide Nanowires on Graphene – Synthesis, Characterization and Application Roya Maboudian, University of California-Berkeley,

Using Contact Probes For Nanomechanical Measurements Mark R. VanLandingham U. S. Army Research Laboratory Instrumentation and Metrology for Nanotechnology.

LOGO What a rule surfactants play in synthesis CNTs array Shuchen Zhang, Yanhe Zhang

NanotechnologyNanoscience Modeling and Simulation Develop models of nanomaterials processing and predict bulk properties of materials that contain nanomaterials.

Instrumentation and Metrology for Nanocharacterization.

Presented By : LAHSAINI Achraf & MAKARA Felipe.  Introduction  Difficult Challenges : > Difficult Challenges between 2013 – 2020 > Difficult Challenges.

Holly Tourtillott University of Missouri

08/14/11 presentation by Nuwan Liyanage.  Introduction  Four Generations of Nanotechnology  Nanofactory  Nanoassembler  Did You Know?  Nanowires.

© Pearson & GNU Su-Jin Kim MEMS Manufacturing Processes MEMS Devices The MEMS(Microelectromechanical systems) devices can be made through the IC Process:

S. E. Thompson EEL 6935 Today’s Subject Continue on some basics on single-wall CNT---- chiral length, angle and band gap; Other properties of CNT; Device.

Metallic and Ionic Nanoparticles

Nano-electronics Vision: Instrumentation and methods for analysis of atomic scale physical properties, and methods to correlate these properties with nano-electronic.

Toxics Use Reduction Institute Inhalation Exposure to Nanoparticles Michael J. Ellenbecker, Sc.D., CIH Toxics Use Reduction Institute University of Massachusetts.

Nanomechanics Track Summary NNI Instrumentation and Metrology Grand Challenge Workshop January 29, 2004.

Common scanning probe modes

Top-Down Meets Bottom-Up: Dip-Pen Nanolithography and DNA-Directed Assembly of Nanoscale Electrical Circuits Student: Xu Zhang Chad A. Mirkin et al. Small.

ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 11: Thermal Property Measurement Techniques For Thin Films and Nanostructures.

ADVANCED HIGH DENSITY INTERCONNECT MATERIALS AND TECHNIQUES DIVYA CHALLA.

Introduction to Spintronics

M.Nuzaihan DMT 243 – Chapter 5 Fundamental Design For Reliability What is Design for Reliability, Microsystems Failure & Failure Mechanisms, Fundamental.

Atomic Force Microscope Nanoindentation/Scratching

March 3rd, 2008 EE235 Nanofabrication, University of California Berkeley Hybrid Approach of Top Down and Bottom Up to Achieve Nanofabrication of Carbon.

Allister James – November 19, 2015

Carbon Nanotube Device Fabrication John Gerling EE 235 Introduction to Nanofabrication

Carbon Nanotubes.

Namas Chandra and Sirish Namilae

Nanoscale Schottky Barrier Measured Using STM Peter Bennett, Arizona State University, DMR The current-voltage (I-V) behavior of nanoscale metallic.

Factors Affecting Tool Life In Machining Processes

Rappture GUI for Carbon Nano Tube Arrays’ mechanical and thermal property simulation By Yide Wang Professor Tim Fisher Sridhar Sadasivam.

A Seminar presentation on

Integrated Circuits.

Scanning Probe Microscopy: Atomic Force Microscope

Riphah International University, Lahore

Date of download: 10/30/2017 Copyright © ASME. All rights reserved.

Introduction The research eld of nanoscale science and technology has made tremendous progress in the past decades, ranging from the experimental manipulations.

Height image of TTF film Current-Voltage characteristics

Group Members: William Ballik Robbie Edwards Alex Klotz Gio Mitchell

MODULE B-3: SCANNING TUNNELING MICROSCOPY

The NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing (CHN) Ahmed Busnaina, Joey Mead, Glen Miller, Carol Barry, Nick McGruer.

Nanocharacterization (III)

Scanning Probe Microscopy

Advances in Scanning Probe Microscopy

Thomas A. Cellucci, Ph.D., MBA President

Presentation transcript:

From Nanoscience to Nanomanufacturing STM manipulation of atoms 1989 AFM 1986 AFM manipulation of a SWNT 1999 Source: IBM Molecular logic gate 2002 Manipulation of few atoms and SWNTs Past and present: Informed public and workforce Environmentally benign processes STM 1981 Templates Reliability and Accelerated Test Manipulation of billions of atoms and SWNTs Future: Biosensor Memory device High rate High volume

Reliability, Accelerated Test, Properties Monitor reliability of materials, interfaces, and systems to ensure manufacturing readiness. –Changes in material or contact properties with environmental exposure, stress, temperature … Accelerated testing for reduced manufacturing risk. –Rapid mechanical, electrical, and thermal cycling with measurement capability. –Example: MEMS devices to rapidly cycle strain or temperature while measuring resistance and imaging in SEM or STM. UHV compatible. Nanoscale material and interface property monitoring. –Example: Measure adherance force and friction between functionalized nanoelements and functionalized substrates. –Example: Measure Young’s modulus and yield strength of nanoelements. MEMS Device for Accelerated Test Interaction of AFM Cantilever with Suspended Nanotube

MEMS Testbed for Accelerated Test and Properties Measurement Innovative MEMS devices characterize nanowires (also nanotubes, nanorods and nanofibers) and conduct accelerated lifetime testing allowing rapid mechanical, electrical, and thermal cycling during AFM/SEM/UHV SPM observation.

MEMS Nanoscale Accelerated Testing, Hot Plate with Nanowire Au, Ru, and RuO 2 nanowires tested.

MEMS Nanoscale Accelerated Testing, Hot Plate with Nanowire Ru, before testing. Ru, after testing. RuOx, after testing. Ru lasts longer in N 2. RuO x fails more quickly than Ru. RuO x shows more pronounced surface diffusion.

MEMS Nanoscale Material Properties Measurements, Nanoscale Pull Test

Process Test Mask for Characterization of Reliability and Interface Properties Purpose: Monitoring of nanoelement assembly processes.

Type II CHN Nanotube Switch for Non-Volatile Memory Schematic of state I and II. Type II Switch has two symmetric non-volatile states. Simple process. CNTs assembled directly on chip using dielectrophoresis or using template transfer. Measurements in progress. CNT/Surface interaction critical, measurements in progress.

Directed Assembly of a Single SWCNT by Dielectrophoresis

AFM Measurement of CNT-Surface Interaction RMS and A-B Data Plotted for a 100 nm Z-Piezo Displacement Below the Substrate F/d On Suspended CNT F/d On neighboring Substrate What: Development of technique for measurement of interactions between functionalized nanotubes and functionalized surfaces. Purpose: Process control for single nanotube switch process.

Goal and Desired Outcome Develop Generally Applicable Tools and Testbeds for: 1.Accelerated test of Nanoelements, Interfaces, and Systems. 2.Measurements of Reliability of Nanoelements, Interfaces, and Systems. 3.Measurements of properties of nanoscale elements. These tools will help to ensure manufacturing readiness and will help to reduce the time for technology transition to manufacturing.