Fig. 2. Temperature dependence of the EL spectra for the green SQW diode at injection currents of (a) 2.00 mA, (b) 0.05 mA,and (c) 0.01 mA.

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Fig. 2. Temperature dependence of the EL spectra for the green SQW diode at injection currents of (a) 2.00 mA, (b) 0.05 mA,and (c) 0.01 mA.

Fig. 3. Temperature dependence of the integrated EL intensity for the green SQW diode at four injection currents of 2.00, 0.20, 0.05, and 0.01 mA. 300K ： current efficiency 15K ： current efficiency injection currentsVf 0.05mA3.3 V 2mA4.4 V T ： 15K

Fig. 4. Schematic model potential structure for carrier capturing influenced by internal and external fields under the forward bias condition.