Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Beyond Silicon… Advanced Power Electronics for FACTS Technology Jerry Melcher APE Initiative Lead Energy Delivery and Utilization
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Initiative Objectives Why are we doing this? Where are we going?
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Power Electronics The Thyristor
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Thyristor - SCR
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Power Progress for Si
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Initiative Objectives Why are we doing this? –Si Power Devices are Reaching Their Fundamental Limits of Performance. Where are we going?
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program The “Diamond” Structure
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Si Electrons 3s 3p
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Physics of Semiconductors E k { EGEGEGEG kp Perturbation Theory
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Chemistry of Semiconductors
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Initiative Objectives Why are we doing this? –Si Power Devices are Reaching Their Fundamental Limits of Performance. Where are we going? –SiC and GaN have Breakdown Electrical Fields ~10 Times Higher than Si. Both 4 Times the Forward Current…at the Same Unit Cost! (maybe)
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program EPRI/DARPA M$, 3 Years Nasa-LewisSiC Northrup-GrummanSiC Vanderbilt UniversitySiC Silicon Power CorpSiC University of FloridaGaN Cal TechGaN
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Advantages of Post-Silicon Materials CVD PropertySi3C SiC (6C SiC) DiamondGaN Importance Bandgap (300K) (2.9)5.53.4Blocking Voltage Maximum Operating 500>900 (>1000)1400>800Limits Power Flow Temp (K) Breakdown Voltage Maximum (Eb, 10 6 V/cm) Power Capacity Hole Mobility Switching Speed (RT, cm 2 /Vs) Thermal Conductivity Cooling Rate (C T, w/cm)
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC Growth SiC Charge 2200 C Boule 2000 C Sublimation 6H-SiC Substrate RF Coils H 2 SiH 4 C 3 H 8 HCL N 2 Al(Me) 3 CVD
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Progress in Wafer Size
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Wafer Price vs. Year
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Defects: Micropipes 2 m Micropipes form to relieve strain around super-screw dislocations. surface energy, = 4 J/m 2 shear modulus, G = 200 GPa b = 6b 0
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Micropipe Density vs. Year
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Record µPipe Density
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC Thyristor: Forward Voltage
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC Diode: Reverse Characterisitics
Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program What About GaN & Diamonds? See OutPost 8 “Why Diamonds are a Girl’s Best Friend!”