Radiation Effects on Emerging Electronic Materials and Devices Ron Schrimpf Vanderbilt University Electrical Engineering & Computer Science Department Institute for Space and Defense Electronics

Radiation Effects on Emerging Electronic Materials and Devices More changes in IC technology and materials in past five years than previous forty years –SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices… Future space and defense systems require understanding radiation effects in advanced technologies –Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation…

Team Members Vanderbilt University –Electrical Engineering: Mike Alles, Dan Fleetwood, Ken Galloway, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller –Physics: Len Feldman, Sok Pantelides Arizona State University –Electrical Engineering: Hugh Barnaby University of Florida –Electrical and Computer Engineering: Mark Law, Scott Thompson Georgia Tech –Electrical and Computer Engineering: John Cressler North Carolina State University –Physics: Gerry Lucovsky Rutgers University –Chemistry: Eric Garfunkel, Gennadi Bersuker Industrial and government collaborators –IBM, Intel, Texas Instruments, Freescale, Jazz, National Semiconductor, SRC/Sematech, Sandia, NASA/DTRA, Lockheed-Martin, Oak Ridge National Lab, CFDRC

Institute for Space and Defense Electronics Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: Government and industry radiation-effects resource –Modeling and simulation –Design support: rad models, hardening by design –Technology support: assessment, characterization Flexible staffing driven by project needs –10 Faculty –25 Graduate students –14 Staff and Research Engineers

Schedule—June 14 AM 8:40MURI Overview Ron Schrimpf, Vanderbilt University 9:00Overview: Atomic-Scale Theory of Radiation-Induced Phenomena Sokrates Pantelides, Vanderbilt University 9:20Hf Impurities in Si-SiO 2 -Si Stacks Apostolos Marinopoulos, Vanderbilt University 9:35Quantum Mechanical Description of Displacement Damage Formation Matt Beck, Vanderbilt University 9:55 Role of Hydrogen in Radiation Response of Lateral PNP Bipolar Transistors Sasha Batyrev, Vanderbilt University 10:10Doping-Type Dependence of Damage in Silicon Diodes Dan Fleetwood, Vanderbilt University 10:30Break 11:00Defects in Non-Crystalline and Nano-Crystalline Alternative Transition Metal Dielectrics Gerry Lucovsky, North Carolina State University 11:40Total Dose Response of HfSiON MOS Capacitors Dakai Chen, Vanderbilt University

Schedule—June 14 PM 1:00Overview: Radiation Effects in Emerging Materials Len Feldman, Vanderbilt University 1:20Radiation-Induced Charge Trapping in Ultra-Thin HfO 2 Based MOSFETs Sriram Dixit, Vanderbilt University 1:40Radiation Effects in Advanced Gate Stacks Eric Garfunkel, Rutgers University Gennadi Bersuker, Sematech 2:20Break 2:50Radiation Effects in SiGe Devices John Cressler, Georgia Tech 3:30Effects of Angle of Incidence and Temperature on Latchup in 65-nm Technology John Hutson, Vanderbilt University 3:50Radiation Challenges in Strained Si Technologies Scott Thompson, University of Florida 4:30Discussion 6:30Dinner

Schedule—June 15 8:00Registration and Continental Breakfast 8:30Total Ionizing Dose Effects in Deep Submicron Bulk CMOS Technologies Hugh Barnaby, Arizona State University 8:50Band-to-Band Tunneling Induced Leakage Current Enhancement in Irradiated FD-SOI Philippe Adell, JPL 9:10Enhanced Radiation-Induced Degradation due to Excess Molecular Hydrogen Jie Chen, Arizona State University 9:30Enabling Radiation-Effects Device Simulations Mark Law, University of Florida 9:50Overview: Monte Carlo Radiative Energy Deposition Bob Weller, Vanderbilt University 10:10Impact of Ion Energy and Specie on Single Event Effects Analysis Robert Reed, Vanderbilt University 10:30Break – High Speed SEE Test Set Demonstration in FGH :00Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays Christina Howe, Vanderbilt University 11:20Neutron-Induced Multiple-Bit Upset Alan Tipton and Jonny Pellish, Vanderbilt University 11:40Effect of Voltage Fluctuations on SET Response of Deep Submicron Digital ICs Matt Gadlage, Vanderbilt University 12:00Meeting Ends

DURIP-funded High-Speed SEE Test Equipment 12.5 Gbit/s bit error rate tester 31.5 GHz analog signal generator 12 GHz real-time digital storage oscilloscope DC-40 GHz RF coax assemblies Requires high-speed packaging DC-40 GHz probe station 100 nm-step resolution stage Configure horizontally or vertically NIR laser irradiation Broadbeam heavy ion Eliminates need for high-speed packaging

Radiation Effects in Emerging Electronic Materials and Devices Motivation Selected Results Impact Development of most accurate rate-prediction tool to date Identification of tungsten as key rad-effects issue Fabrication of rad-hard, reliable HfSiON gate dielectrics Demonstration of extremely rad-hard SiGe technology First examination of rad effects in strained-Si CMOS More changes in IC technology and materials in past five years than previous forty years— impact on radiation response is dramatic Experimental analysis of state-of-the-art technologies through partnerships with semiconductor manufacturers Identification of critical mechanisms through first- principles modeling Implementation and application of a revolutionary multi- scale radiation-effects simulation tool to identify key challenges and develop hardening approaches Approach Design tools and methods demonstrated for future rad- hard technologies Greatly improved error-rate analysis tools allow implementation of more reliable space electronics First radiation-effects characterization of most advanced technologies (strained Si, HfSiON, etc.)—essential for deployment of state-of-the-art electronics in DoD systems

Radiation Effects in Emerging Electronic Materials and Devices: Results Radiation Response of New Materials Single Events in New Technologies Localized Radiation Damage RADSAFE—First multi-scale Monte Carlo single-event/rate- prediction tool Passivation/metallization found to dominate SEE response in some hardened technologies Excellent agreement with on-orbit data; conventional rate- prediction methods underestimate rate by orders of magnitude Incorporation of new materials dramatically impacts radiation response HfO 2 -based dielectrics and emerging high-k materials tested; HfSiON is very promising Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) offers possibility for single-event hardening New device technologies strongly impact single-event response and TID leakage current SiGe HBTs, strained Si CMOS, ultra-small bulk CMOS exhibit complicated charge collection mechanisms Floating-body SOI found to exhibit high radiation-induced off-state leakage due to tunneling Impact of New Device Structures First-principles evidence of micro-melting in small devices Displacement damage found to depend on substrate doping type Monte-Carlo simulation tool for non-ionizing energy loss developed

Radiation Effects on Emerging Electronic Materials and Devices: Recent Results New Error-Rate Prediction Tool First Radiation Results on HfSiON First dynamical calculation of displace- ment damage from first principles Hf-based dielectrics emerging at 45-nm and below Much improved radiation response compared to standard Hf silicate films Interface nitridation is the key to hardness Conventional methods underestimate error rate by orders of magnitude New RADSAFE approach provides outstanding agreement with on-orbit data Demonstrates that tungsten metallization can dramatically impact error rate Multiple-bit upsets are the key reliability issue in advanced memories Predicting MBU rate allows design of ECC and memory architecture Fraction of events resulting in MBUs doubles for grazing angles First Neutron MBU Calculations Very large disordered regions can lead to single-event hard and soft errors Key reliability issue at 65 nm and below Possible explanation for dielectric rupture

Radiation Effects on Emerging Electronic Materials and Devices: Recent Results Effects of Strain on SEE New Gate DielectricsSEE in SiGe HBTs Hf-based dielectrics emerging in new technologies Combined effects of radiation and negative-bias temperature stress much greater than expected First experiments to vary strain during SEE testing planned for 2007 Strain leads to enhanced mobility and non-isotropic transport Almost all advanced CMOS will use strain engineering Quantitative analysis of MBU rate in advanced SRAMs Fraction of events resulting in MBUs increases for new technologies Explanation of SEE sensitivity of cells resistant to single strikes Multiple-Bit Upset Microbeam testing shows charge collection from distant strikes Mechanisms identified through simulation Hardening approach proposed

New Physically-Based Method of Predicting Single-Event Error Rates MREDSPICE Sensitive Volumes TCAD Critical Charge Solid Model Materials Error Rate Cross Section Sensitive Volumes Circuit ResponseTransportCalorimetry Cross Section Error Rate Transport Calorimetry Circuit Response Materials Environment (Beam/Natural) Locations Dimensions